Enhancement-mode III-nitride devices

Patent metadata

Field	Value
Publication number	US-10535763-B2
Application number	US-201816029505-A
Country	US
Kind code	B2
Filing date	Jul 6, 2018
Priority date	Mar 13, 2013
Publication date	Jan 14, 2020
Grant date	Jan 14, 2020

Abstract

A III-N enhancement-mode transistor includes a III-N structure including a conductive channel, source and drain contacts, and a gate electrode between the source and drain contacts. An insulator layer is over the III-N structure, with a recess formed through the insulator layer in a gate region of the transistor, with the gate electrode at least partially in the recess. The transistor further includes a field plate having a portion between the gate electrode and the drain contact, the field plate being electrically connected to the source contact. The gate electrode includes an extending portion that is outside the recess and extends towards the drain contact. The separation between the conductive channel and the extending portion of the gate electrode is greater than the separation between the conductive channel and the portion of the field plate that is between the gate electrode and the drain contact.

First claim

What is claimed is:

1. A bidirectional switch, comprising:
a III-N structure including a conductive channel therein;
a first gate electrode and a second gate electrode, the first and second gate electrodes being on the III-N structure; and
a first source contact and a second source contact, the first and second source contacts electrically contacting the conductive channel, wherein the first and second gate electrodes are each between the first and second source contacts; wherein
the first source contact is part of a first electrode and the second source contact is part of a second electrode, the first electrode including a first portion which is between the first and second gate electrodes, and the second electrode including a second portion that is between the first and second gate electrodes, the first gate electrode including a main gate portion and an extending portion, the extending portion extending from the main gate portion towards the second gate electrode, wherein a separation between the conductive channel and the extending portion of the first gate electrode is greater than a separation between the conductive channel and the first portion of the first electrode; and
a respective gate insulator layer between each of the first and second gate electrodes and the III-N structure.

2. The bidirectional switch of claim 1 , further comprising:
a first additional contact between the first gate electrode and the second gate electrode; and
a first diode having an first anode and a first cathode; wherein
the first anode is electrically connected to the first electrode, and the first cathode is electrically connected to the first additional contact.

3. The bidirectional switch of claim 2 , wherein the first additional contact electrically contacts the conductive channel.

4. The bidirectional switch of claim 2 , further comprising a second additional contact between the first and second gate electrodes and a second diode having a second anode and a second cathode, wherein the second anode is electrically connected to the second electrode, and the second cathode is electrically connected to the second additional contact.

5. The bidirectional switch of claim 2 , wherein a reverse bias breakdown voltage of the first diode is smaller than a breakdown voltage of the bidirectional switch.

6. The bidirectional switch of claim 5 , wherein the reverse bias breakdown voltage of the first diode is less than 0.3 times the breakdown voltage of the bidirectional switch.

7. A bidirectional switch, comprising:
a III-N structure including a conductive channel therein;
a first gate electrode and a second gate electrode, the first and second gate electrodes being on the III-N structure; and
a first source contact and a second source contact, the first and second source contacts electrically contacting the conductive channel, wherein the first and second gate electrodes are each between the first and second source contacts; wherein
the first source contact is part of a first electrode and the second source contact is part of a second electrode, the first electrode including a first portion which is between the first and second gate electrodes, and the second electrode including a second portion which is between the first and second gate electrodes; and
an insulating material over the III-N structure, the insulating material including a first recess and a second recess, wherein the first portion of the first electrode is in the first recess, and the second portion of the second electrode is in the second recess.

8. The bidirectional switch of claim 7 , further comprising:
a first additional contact between the first gate electrode and the second gate electrode; and
a first diode having an first anode and a first cathode; wherein
the first anode is electrically connected to the first electrode, and the first cathode is electrically connected to the first additional contact.

9. The bidirectional switch of claim 8 , wherein the first additional contact electrically contacts the conductive channel.

10. The bidirectional switch of claim 8 , further comprising a second additional contact between the first and second gate electrodes and a second diode having a second anode and a second cathode, wherein the second anode is electrically connected to the second electrode, and the second cathode is electrically connected to the second additional contact.

11. The bidirectional switch of claim 8 , wherein a reverse bias breakdown voltage of the first diode is smaller than a breakdown voltage of the bidirectional switch.

12. The bidirectional switch of claim 11 , wherein the reverse bias breakdown voltage of the first diode is less than 0.3 times the breakdown voltage of the bidirectional switch.

13. A bidirectional switch, comprising:
a III-N structure including a conductive channel therein;
a first source contact and a second source contact, wherein the first source contact and the second source contact electrically contact the conductive channel;
a first gate electrode positioned between the first and second source contacts;
a second gate electrode positioned between the first gate electrode and the second source contact;
an insulator layer over the III-N structure, wherein
a first recess is formed through the insulator layer in a first gate region between the first source contact and the second source contact, the first recess comprising a first bottom surface, and the first gate electrode is at least partially in the first recess, and
a second recess is formed through the insulator layer in a second gate region between the first recess and the second source contact, the second recess comprising a second bottom surface, and the second gate electrode is at least partially in the second recess;

an electrode defining layer having a thickness, the electrode defining layer being over the insulator layer, wherein a third recess comprising a third bottom surface is formed through a first portion of the electrode defining layer between the first source contact and the second source contact, and a fourth recess comprising a fourth bottom surface is formed through a second portion of the electrode defining layer between the third recess and the second source contact;
a first field plate having a portion that is in the third recess, the first field plate being electrically connected to the first source contact; and
a second field plate having a portion that is in the fourth recess, the second field plate being electrically connected to the second source contact.

14. The bidirectional switch of claim 13 , wherein the first bottom surface of the first recess has a first edge and a second edge, the first edge being between the first source contact and the second edge, and wherein the third bottom surface of the third recess has a third edge and a fourth edge, the third edge being between the first source contact and the fourth edge; wherein
the third edge of the third bottom surface is between the second edge of the first bottom surface and the second source contact.

15. The bidirectional switch of claim 14 , wherein the third and fourth recesses each extend through the entire thickness of the electrode defining layer.

16. The bidirectional switch of claim 15 , wherein the first field plate contacts the insulator layer in the third recess and the second field plate contacts the insulator layer in the fourth recess.

17. The bidirectional switch of claim 13 , further comprising a gate insulator layer in the first recess between the first gate electrode and the III-N structure.

Assignees

• Transphorm Inc

Inventors

• Lal Rakesh K

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• H10W74/43

  comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title

• H10W72/5453

  connecting between multiple bond pads on a chip, e.g. daisy chain · CPC title