Voltage controlled nano-magnetic random number generator
US-2016202954-A1 · Jul 14, 2016 · US
US10534579B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10534579-B2 |
| Application number | US-201816147516-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 28, 2018 |
| Priority date | Jan 15, 2014 |
| Publication date | Jan 14, 2020 |
| Grant date | Jan 14, 2020 |
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A system according to one embodiment includes a pinned layer; a spacer layer above the pinned layer; a free layer above the spacer layer; a heating device, for heating the free layer to induce a paramagnetic thermal instability in the free layer whereby a magnetization of the free layer randomly switches between different detectable magnetic states upon heating thereof; and a magnetoresistance detection circuit for detecting an instantaneous magnetic state of the free layer.
Opening claim text (preview).
What is claimed is: 1. A system comprising: a substrate; a nanoparticle; a heating device spaced apart from the nanoparticle and positioned on an upper surface of the substrate, wherein the heating device is configured to heat the nanoparticle to randomly switch a magnetization of the nanoparticle between different detectable magnetic states; a magnetoresistance reading device spaced apart from the nanoparticle and the heating device, wherein the magnetoresistance reading device is configured to detect the magnetic states of the nanoparticle; and another heating device, wherein the nanoparticle is positioned between the heating device and the another heating device, and wherein the another heating device and the nanoparticle are also positioned on the upper surface of the substrate. 2. The system of claim 1 , wherein the magnetoresistance reading device comprises a deposition plane oriented substantially perpendicular to the upper surface of the substrate. 3. The system of claim 1 , wherein the magnetoresistance reading device comprises a deposition plane oriented substantially parallel to the upper surface of the substrate. 4. The system of claim 1 , wherein the magnetoresistance reading device comprises a deposition plane oriented at an angle to the upper surface of the substrate. 5. The system of claim 1 , wherein an aspect ratio of length to width of the nanoparticle is between about 1.1 to about 3. 6. The system of claim 1 , wherein the nanoparticle comprises a ferromagnetic material. 7. The system of claim 6 , wherein the nanoparticle comprises at least one of CoFeB, CoFeGe, CoFe, and NiFe. 8. The system of claim 1 , wherein a saturation magnetization of the nanoparticle is in a range including 560 emu/cm 3 to 900 emu/cm 3 . 9. The system of claim 1 , wherein the heating device comprises at least one of Cu, Ag, Cr, and Ru. 10. The system of claim 1 , wherein the heating device comprises a plurality of heating devices, each of the plurality of heating devices positioned on the upper surface of the substrate, and wherein the nanoparticle is separated from the upper surface of the substrate and positioned between the plurality of heating devices and the magnetoresistance reading device. 11. The system of claim 1 , wherein the magnetoresistance reading device is positioned above the nanoparticle. 12. A system comprising: at least one nanoparticle positioned on an upper surface of a substrate; a plurality of heating devices, each of the plurality of heating devices being positioned on the upper surface of the substrate and spaced apart from the at least one nanoparticle, wherein the plurality of heating devices are configured to heat the at least one nanoparticle to randomly switch a magnetization of the at least one nanoparticle between different detectable magnetic states; and a plurality of magnetoresistance reading devices spaced apart from the upper surface of the substrate, wherein the plurality of magnetoresistance reading devices are configured to detect the magnetic states of the at least one nanoparticle. 13. The system of claim 12 , wherein the at least one nanoparticle comprises one nanoparticle, wherein the plurality of heating devices comprises two heating devices, one on each side of the one nanoparticle, and wherein the plurality of magnetoresistance reading devices comprises two magnetoresistance reading devices. 14. The system of claim 13 , wherein each of the two magnetoresistance reading devices comprises a deposition plane, and wherein the deposition place of each of the two magnetoresistance reading devices is oriented along a common plane relative to the upper surface of the substrate. 15. The system of claim 13 , wherein each of the two magnetoresistance reading devices comprises a deposition plane, and wherein the deposition plane of a first one of the two magnetoresistance reading devices is oriented substantially parallel to the upper surface of the substrate, and the deposition place of a second one of the two magnetoresistance reading devices is oriented either perpendicular to the upper surface of the substrate or at an angle to the upper surface of the substrate. 16. The system of claim 12 , wherein the least one nanoparticle comprises a plurality of nanoparticles, and wherein each of the plurality of nanoparticles is separated from another one of the plurality of nanoparticles by at least one of the plurality of heating devices. 17. The system of claim 12 , wherein each of the plurality of magnetoresistance reading devices is one of an anisotropic magnetoresistance sensor, a giant magnetoresistance sensor, or a tunnel magnetoresistance sensor. 18. A method comprising: heating a nanoparticle to induce paramagnetic thermal instability for randomly switching a magnetization of the nanoparticle between different detectable magnetic states, wherein the heating is performed by a heating device spaced apart from the nanoparticle and positioned on an upper surface of a substrate and by another heating device positioned on the upper surface of the substrate, wherein the nanoparticle is positioned between the heating device and the another heating device; detecting the magnetic states of the nanoparticle using at least one magnetoresistance reading device; and generating a random number from the magnetic states. 19. The method of claim 18 , wherein the random number is generated by translating the magnetic states to a 1 or 0.
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