Array substrate and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10534232-B2
Application number	US-201916424461-A
Country	US
Kind code	B2
Filing date	May 28, 2019
Priority date	Sep 24, 2015
Publication date	Jan 14, 2020
Grant date	Jan 14, 2020

Abstract

A manufacturing method of an array substrate includes the steps of providing a base plate and forming a thin-film transistor (TFT) layer on the base plate; forming a quantum dot layer on the TFT layer; and forming a protective filter layer on the quantum dot layer to provide protection to the quantum dot layer. The protective filter layer also provides an effect of light filtering in order to prevent ultraviolet light or blue light from transmitting therethrough and allows light of red and green colors to pass.

First claim

What is claimed is:

1. An array substrate manufacturing method, comprising the following steps:
(1) providing a base plate and forming a thin-film transistor (TFT) layer on the base plate;
(2) forming a quantum dot layer on the TFT layer, where the quantum dot layer is adapted to convert blue color into light in a wavelength range covering one of red and green colors; and
(3) forming a protective filter layer on the quantum dot layer, wherein the protective filter layer provides an effect of light filtering so as to allow the light in the wavelength range covering red and green colors to transmit therethrough and prevent the light of blue color from transmitting therethrough.

2. The array substrate manufacturing method as claimed in claim 1 , wherein Step 2 is specifically performed by applying a vapor deposition process to form a quantum dot film on the TFT layer so as to form the quantum dot layer.

3. The array substrate manufacturing method as claimed in claim 1 , wherein Step 2 is specifically performed by providing a quantum dot material and a dissolving medium, dissolving and dispersing the quantum dot material in the dissolving medium and uniformly mixed to form a quantum dot paste, and applying the quantum dot paste to form a film on the TFT layer and drying and curing to obtain the quantum dot layer.

4. The array substrate manufacturing method as claimed in claim 3 , wherein in Step 2, the quantum dot material is oil soluble or water soluble; the quantum dots are in the form of spheres, bars, or fibrous forms; the dissolving medium is silica series or epoxy series; and in Step 2 the quantum dot paste is applied to the TFT layer to form the film by means of spray coating, spin coating, printing, or slot-die coating.

5. The array substrate manufacturing method as claimed in claim 1 further comprising the following step:
(4) forming a color filter layer on the protective layer.

6. An array substrate manufacturing method, comprising the following steps:
(1) providing a base plate and forming a thin-film transistor (TFT) layer on the base plate;
(2) forming a quantum dot layer on the TFT layer; and
(3) forming a protective filter layer on the quantum dot layer, wherein the protective filter layer provides an effect of light filtering so as to allow light in a wavelength range covering red and green colors to transmit therethrough and prevent light in a wavelength range covering blue color from transmitting therethrough.

7. The array substrate manufacturing method as claimed in claim 6 , wherein Step 2 is specifically performed by applying a vapor deposition process to form a quantum dot film on the TFT layer so as to form the quantum dot layer.

8. The array substrate manufacturing method as claimed in claim 6 , wherein Step 2 is specifically performed by providing a quantum dot material and a dissolving medium, dissolving and dispersing the quantum dot material in the dissolving medium and uniformly mixed to form a quantum dot paste, and applying the quantum dot paste to form a film on the TFT layer and drying and curing to obtain the quantum dot layer.

9. The array substrate manufacturing method as claimed in claim 8 , wherein in Step 2, the quantum dot material is oil soluble or water soluble; the quantum dots are in the form of spheres, bars, or fibrous forms; the dissolving medium is silica series or epoxy series; and in Step 2 the quantum dot paste is applied to the TFT layer to form the film by means of spray coating, spin coating, printing, or slot-die coating.

10. The array substrate manufacturing method as claimed in claim 6 further comprising the following step:
(4) forming a color filter layer on the protective layer.

11. An array substrate manufacturing method, comprising the following steps:
(1) providing a base plate and forming a thin-film transistor (TFT) layer on the base plate;
(2) forming a quantum dot layer on the TFT layer; and
(3) forming a protective filter layer on the quantum dot layer, wherein the protective filter layer provides an effect of light filtering so as to allow exclusively light in the wavelength range covering one of red and green colors to transmit therethrough.

12. The array substrate manufacturing method as claimed in claim 11 , wherein Step 2 is specifically performed by applying a vapor deposition process to form a quantum dot film on the TFT layer so as to form the quantum dot layer.

13. The array substrate manufacturing method as claimed in claim 11 , wherein Step 2 is specifically performed by providing a quantum dot material and a dissolving medium, dissolving and dispersing the quantum dot material in the dissolving medium and uniformly mixed to form a quantum dot paste, and applying the quantum dot paste to form a film on the TFT layer and drying and curing to obtain the quantum dot layer.

14. The array substrate manufacturing method as claimed in claim 13 , wherein in Step 2, the quantum dot material is oil soluble or water soluble; the quantum dots are in the form of spheres, bars, or fibrous forms; the dissolving medium is silica series or epoxy series; and in Step 2 the quantum dot paste is applied to the TFT layer to form the film by means of spray coating, spin coating, printing, or slot-die coating.

15. The array substrate manufacturing method as claimed in claim 11 further comprising the following step:
(4) forming a color filter layer on the protective layer.

Assignees

• Shenzhen China Star Optoelect

Inventors

• Cheng Xiaoping
• Lee Yungjui

Classifications

• G02F1/1362 Primary

  Active matrix addressed cells {(G02F1/134336, G02F1/134363 take precedence)} · CPC title

• G02F1/133617

  Illumination with ultraviolet light; Luminescent elements or materials associated to the cell · CPC title

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• G02F2201/50

  Protective arrangements · CPC title

• G02F2201/086

  UV absorbing · CPC title