Sulfur-containing thin films
US-2015170914-A1 · Jun 18, 2015 · US
US10532927B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10532927-B2 |
| Application number | US-201815865874-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 9, 2018 |
| Priority date | Jan 9, 2017 |
| Publication date | Jan 14, 2020 |
| Grant date | Jan 14, 2020 |
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The present disclosure relates to a composition that includes, in order: a first layer that includes MAw; a second layer that includes MOyAz; and a third layer that includes MOx, where M includes a transition metal, A includes at least one of sulfur, selenium, and/or tellurium, w is between greater than zero and less than or equal to five, x is between greater than zero and less than or equal to five, y is between greater than zero and less than or equal to five, and z is between greater than zero and less than or equal to five. In some embodiments of the present disclosure, the transition metal may include at least one of molybdenum and/or tungsten. In some embodiments of the present disclosure, A may be sulfur.
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What is claimed is: 1. A composition comprising, in order: a first layer comprising MA w ; a second layer comprising MO y A z ; and a third layer comprising MO x , wherein: M comprises a transition metal, A comprises at least one of sulfur, selenium, or tellurium, w is between greater than zero and less than or equal to five, x is between greater than zero and less than or equal to five, y is between greater than zero and less than or equal to five, and z is between greater than zero and less than or equal to five. 2. The composition of claim 1 , wherein the transition metal comprises at least one of molybdenum or tungsten. 3. The composition of claim 1 , wherein A is sulfur. 4. The composition of claim 1 , wherein the first layer comprises MoS w . 5. The composition of claim 1 , wherein the second layer comprises MoO y S z . 6. The composition of claim 1 , wherein the third layer comprises MoO x . 7. The composition of claim 1 , wherein w is between greater than one and less than or equal to three. 8. The composition of claim 1 , further comprising: a first transition layer positioned between the first layer and the second layer, wherein: the transition layer contains intermixed MA w and MO y A z . 9. The composition of claim 1 , further comprising: a first transition layer positioned between the second layer and the third layer, wherein: the transition layer contains intermixed MO y A z and MO x . 10. The composition of claim 1 , wherein the first layer, the second layer, and the third layer are all at least partially intermixed. 11. The composition of claim 1 , wherein at least one of the first layer, the second layer, and the third layer is at least partially crystalline. 12. The composition of claim 1 , wherein the first layer has a thickness between 1 μm and 100 μm. 13. The composition of claim 1 , wherein the second layer has a thickness between 1 μm and 100 μm. 14. The composition of claim 1 , wherein the third layer has a thickness between 1 μm and 100 μm. 15. The composition of claim 1 , further comprising: an oxide layer, wherein the third layer is positioned between the oxide layer and the second layer. 16. The composition of claim 15 , wherein the oxide layer comprises at least one of titanium oxide, aluminum oxide, or zinc oxide. 17. The composition of claim 15 , further comprising: an active layer comprising a group III-V alloy, wherein the oxide layer is positioned between the active layer and third layer. 18. A method comprising, in order: depositing a starting layer comprising MA v onto an oxide layer; and annealing the starting layer and the oxide layer, wherein: v is between greater than zero and less than or equal to five, and the annealing transforms the starting layer to a graded layer comprising, in order: a first layer comprising MA w ; a second layer comprising MO y A z ; and a third layer comprising MO x , wherein: M comprises a transition metal, A comprises at least one of sulfur, selenium, or tellurium, w is between greater than zero and less than or equal to five, x is between greater than zero and less than or equal to five, y is between greater than zero and less than or equal to five, and z is between greater than zero and less than or equal to five. 19. The method of claim 18 , wherein the depositing is performed by electrochemical cathodic deposition. 20. A method for photoelectrochemical water-splitting, the method comprising: contacting a device with water; and exposing the device to a lightsource, wherein: the contacting and the exposing convert at least a portion of the water to hydrogen, and the device comprises: a first layer comprising MA w ; a second layer comprising MO y A z ; and a third layer comprising MO x , wherein: A comprises a transition metal, w is between greater than zero and less than or equal to five, x is between greater than zero and less than or equal to five, y is between greater than zero and less than or equal to five, and z is between greater than zero and less than or equal to five.
Decomposition of water (by electrolysis of water C25B1/04) · CPC title
comprising titanium oxide, e.g. TiO2 (H01G9/2036 takes precedence) · CPC title
Water · CPC title
comprising a semiconductor electrode comprising AIII-BV compounds with or without impurities, e.g. doping materials · CPC title
Constitutive chemical elements of heterogeneous catalysts · CPC title
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