Compensating for scanning electron microscope beam distortion-induced metrology error using design

US10529534B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10529534-B2
Application numberUS-201815965061-A
CountryUS
Kind codeB2
Filing dateApr 27, 2018
Priority dateJan 5, 2018
Publication dateJan 7, 2020
Grant dateJan 7, 2020

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Methods and systems for quantifying and correcting for non-uniformities in images used for metrology operations are disclosed. A metrology area image of a wafer and a design clip may be used. The metrology area image may be a scanning electron microscope image. The design clip may be the design clip of the wafer or a synthesized design clip. Tool distortions, including electron beam distortions, can be quantified and corrected. The design clip can be applied to the metrology area image to obtain a synthesized image such that one or more process change variations are suppressed and one or more tool distortions are enhanced.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of compensating for scanning electron microscope beam distortion-induced metrology error comprising: receiving, at a processor, a metrology area image of a wafer, wherein the metrology area image is a microscopy image of the wafer; receiving, at the processor, a design clip from a storage medium, wherein the design clip includes one or more design polygons and corresponds to an area of the wafer in the metrology area image; applying the design clip to the metrology area image using the processor with an image comparison and rendering process thereby obtaining a synthesized image, wherein one or more process change variations are suppressed and one or more tool distortions are enhanced; and performing metrology operations on the synthesized image. 2. The method of claim 1 , wherein the design clip is a design for the wafer. 3. The method of claim 1 , wherein the design clip is a synthesized design clip, and wherein the synthesized design clip is generated by a method comprising: generating the synthesized design clip using the process change variations with a machine algorithm; and communicating the synthesized design clip to the storage medium. 4. The method of claim 3 , wherein the synthesized design clip is generated by a method further comprising: receiving images and data from one or more process modulated wafers at a machine learning module; and learning the process change variations at the machine learning module using the machine algorithm. 5. The method of claim 3 , wherein the machine algorithm is a deep learning algorithm. 6. The method of claim 1 , wherein the metrology area image is a scanning electron microscope image. 7. The method of claim 1 , wherein the metrology area image is an average of a plurality of scanning electron microscope images. 8. The method of claim 1 , wherein the storage medium is a persistent, non-transient storage medium. 9. The method of claim 1 , further comprising obtaining the metrology area image of the wafer using a scanning electron microscope. 10. The method of claim 1 , further comprising tuning system components of a wafer metrology tool to reduce distortion based on the metrology operations. 11. A system for compensating for distortion-induced metrology error comprising: a wafer metrology tool configured to produce a metrology area image, wherein the metrology area image is a microscopy image of the wafer; and a processor in electronic communication with the wafer metrology tool, wherein the processor is configured to receive and apply a design clip to the metrology area image using an image comparison and rendering process such that one or more process change variations are suppressed and one or more tool distortions are enhanced thereby obtaining a synthesized image, wherein the design clip includes one or more design polygons and corresponds to an area of the wafer in the metrology area image. 12. The system of claim 11 , wherein the wafer metrology tool is a scanning electron microscope. 13. The system of claim 11 , further comprising an electronic data storage medium containing the design clip, wherein the electronic data storage medium is in electronic communication with the processor. 14. The system of claim 11 , wherein the processor is further configured to perform metrology operations on the synthesized image. 15. The system of claim 11 , wherein the design clip is a synthesized design clip, and wherein the system includes a machine learning module that is configured to: receive images and data from one or more process modulated wafers; learn the process change variations using the images and data; and generate the synthesized design clip using the process change variations. 16. A non-transitory computer-readable storage medium, comprising one or more programs for executing the following steps on one or more computing devices: applying a design clip to a metrology area image using an image comparison and rendering process thereby obtaining a synthesized image, wherein one or more process change variations are suppressed and one or more tool distortions are enhanced, wherein the metrology area image is a microscopy image of the wafer, and wherein the design clip includes one or more design polygons and corresponds to an area of the wafer in the metrology area image; and sending instructions to perform metrology operations on the synthesized image. 17. The non-transitory computer-readable storage medium of claim 16 , wherein the design clip is a synthesized design clip, and wherein the steps include generating the synthesized design clip using the process change variations with a machine algorithm. 18. The non-transitory computer-readable storage medium of claim 17 , wherein the machine algorithm is a deep learning algorithm. 19. The non-transitory computer-readable storage medium of claim 16 , wherein the metrology area image is a scanning electron microscope image. 20. The non-transitory computer-readable storage medium of claim 16 , wherein the metrology area image is an average of a plurality of scanning electron microscope images.

Assignees

Inventors

Classifications

  • Calibration · CPC title

  • Pattern inspection · CPC title

  • Measurement of surface topography · CPC title

  • H01J37/222Primary

    Image processing arrangements associated with the tube · CPC title

  • G06T5/50Primary

    using two or more images, e.g. averaging or subtraction · CPC title

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What does patent US10529534B2 cover?
Methods and systems for quantifying and correcting for non-uniformities in images used for metrology operations are disclosed. A metrology area image of a wafer and a design clip may be used. The metrology area image may be a scanning electron microscope image. The design clip may be the design clip of the wafer or a synthesized design clip. Tool distortions, including electron beam distortions…
Who is the assignee on this patent?
Kla Tencor Corp
What technology area does this patent fall under?
Primary CPC classification H01J37/222. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 07 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).