Lithographic method

Patent metadata

Field	Value
Publication number	US-10527958-B2
Application number	US-201816132520-A
Country	US
Kind code	B2
Filing date	Sep 17, 2018
Priority date	Sep 28, 2017
Publication date	Jan 7, 2020
Grant date	Jan 7, 2020

Abstract

A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.

First claim

The invention claimed is:

1. A method, comprising:
determining a quality parameter for a plurality of substrates;
determining measurement parameter values for the plurality of substrates using a sensor system configured to measure a property of a substrate, for a plurality of values of an operational parameter corresponding to a physical characteristic of radiation in the sensor system;
comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and
determining one or more optimized values of the operational parameter based on the comparing.

2. The method according to claim 1 , wherein the mapping is a weighted sum, a non-linear mapping or a trained mapping based on a machine learning method.

3. The method according to claim 1 , wherein the quality parameter is an overlay or focus parameter.

4. The method according to claim 1 , wherein the measurement parameter is a position of a feature provided to the plurality of substrates or an out-of-plane deviation of a location on the substrate.

5. The method according to claim 1 , wherein the operational parameter is a wavelength, polarization state, spatial coherence state or temporal coherence state of the radiation.

6. The method according to claim 1 , wherein the quality parameter is determined using a metrology system and/or using a simulation model predicting the quality parameter based on context information and/or measurement data.

7. The method according to claim 1 , wherein the one or more optimized values of the operational parameter comprise a set of one or more first values associated with a first coordinate of the measurement parameter values and a set of one or more second values associated with a second coordinate of the measurement parameter values.

8. The method according to claim 7 , wherein the one or more first values of the operational parameter are optimized independently of the one or more second values of the operational parameter.

9. A method for determining a condition of a semiconductor manufacturing process, the method comprising:
determining the one or more optimized values of the operational parameter according to claim 1 ;
comparing the determined one or more values of the operational parameter to one or more values of a reference operational parameter; and
determining the condition based on the comparison.

10. The method according to claim 1 , further comprising determining a characteristic of a stack applied to the substrate based on comparing the determined measurement parameter values to modelled measurement parameter values, wherein the model has the characteristic as an input.

11. The method according to claim 1 , wherein determining the one or more optimized values of the operational parameter based on the comparing is performed for different zones of the substrate.

12. The method according to claim 1 , wherein the measurement parameter is a measured position of a mark and the quality parameter is a mark-to-device shift, the one or more optimized values of the operational parameter determined so as to optimize the quality parameter such that a substrate to substrate variation is reduced or minimal.

13. The method according to claim 12 , further comprising determining the weightings for operational parameter values for measuring sub-segmented marks using measurements obtained from substrates having sub-segmented marks that have intentional mark-to-device shifts applied thereto so as to determine a sensitivity of the operational parameter to mark-to-device shifts.

14. The method according to claim 1 , for optimizing operational parameter values of a metrology system utilized to control processing of substrates, wherein the sensor system comprises a first sensor system associated with a first measurement system configured to measure a first characteristic of a substrate before processing and a second sensor system associated with a second measurement system configured to measure a second characteristic of the substrate after processing, wherein the method comprises:
determining a first set of measurement parameter values for the plurality of substrates using the first sensor system for the plurality of values of the operational parameter;
determining a second set of measurement parameters for the plurality of substrates using the second sensor system for the plurality of values of the operational parameter;
comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values for each of the first and second sets of measurement parameter values; and
wherein the determining of one or more optimized values of the operational parameter comprises optimizing a first set of operational parameter values associated with the first measurement system and a second set of operational parameter values associated with the second measurement system simultaneously, wherein the optimizing mitigates a substrate to substrate variation of the second characteristic.

15. The method according to claim 1 , wherein the quality parameter and the measurement parameter are associated with a particular layer associated with the plurality of substrates and wherein the particular layer is selected based on evaluation of:
a first substrate to substrate variation of the quality parameter associated with the particular layer; and
a second substrate to substrate variation of the variation between the measurement parameter values associated with the particular layer.

16. The method according to claim 15 , wherein the particular layer is selected responsive to the first substrate to substrate variation and the second substrate to substrate variation exceeding a threshold.

17. A method for monitoring the condition of a semiconductor manufacturing process, the method comprising:
obtaining an optimized value of the operational parameter using the method according to claim 1 ;
obtaining measurement parameters for a further substrate obtained using the sensor system for a plurality of values of the operational parameter;
determining a new value of the operational parameter associated with an expected minimum substrate to substrate variation of the measurement data; and
determining the condition of the semiconductor manufacturing process based on comparison of the optimized value and the new value of the operational parameter.

18. A non-transitory computer program product comprising program instructions therein that, when executed by a suitable apparatus, are configured to at least:
determine a quality parameter for a plurality of substrates;
determine measurement parameter values for the plurality of substrates using a sensor system configured to measure a property of a substrate, for a plurality of values of an operational parameter corresponding to a physical characteristic of radiation in the sensor system;
compare a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and
determine one or more optimized values of the operational parameter based on the comparison.

19. A method of optimizing measurement data from a sensor system configured for measuring a property of a substrate, the method comprising:
obtaining overlay data for a plurality of substrates, wherein the overlay represents a deviation between a measured and an expected position of an alignment mark on a substrate and the overlay data compris

Assignees

• Asml Netherlands Bv

Inventors

• Tinnemans Patricius Aloysius Jacobus
• Hulsebos Edo Maria
• Megens Henricus Johannes Lambertus
• Raghunathan Sudharshanan
• Menchtchikov Boris
• Erdamar Ahmet Koray
• Verhees Loek Johannes Petrus
• Roelofs Willem Seine Christian
• Van De Ven Wendy Johanna Martina
• Yagubizade Hadi
• Cekli Hakki Ergün
• Brinkhof Ralph
• Vu Tran Thanh Thuy
• Goosen Maikel Robert
• Van'T Westeinde Maaike
• Kou Weitian
• Rijpstra Manouk
• Cox Matthijs
• Bijnen Franciscus Godefridus Casper

Classifications

• G03F9/7023

  Aligning or positioning in direction perpendicular to substrate surface · CPC title

• G03F9/7019

  Calibration · CPC title

• G03F7/70633

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• G03F7/70258

  Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system · CPC title

• G03F7/705

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title