Semiconductor light-receiving element
US-2016087398-A1 · Mar 24, 2016 · US
US10527792B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10527792-B2 |
| Application number | US-201615142434-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 29, 2016 |
| Priority date | Apr 29, 2016 |
| Publication date | Jan 7, 2020 |
| Grant date | Jan 7, 2020 |
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An optical waveguide termination comprising a light-receiving inlet for receiving light to be terminated, a curved section extending from the inlet and having a continuously decreasing radius of curvature, and a light-terminating tip at an end of the curved section. The curved section may define a spiral waveguide, for example a logarithmic spiral, having a waveguide width that continuously decreases from the inlet to the tip.
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The invention claimed is: 1. An optical waveguide termination comprising: a light-receiving inlet for receiving light to be terminated; a curved section of a nanotaper waveguide extending from the inlet and having a continuously decreasing radius of curvature; and a light-terminating tip at an end of the curved section; wherein the curved section defines a spiral and has a waveguide width that continuously decreases from the inlet to the tip. 2. The optical waveguide termination of claim 1 wherein the optical waveguide termination is a silicon waveguide. 3. The optical waveguide termination of claim 2 wherein the silicon waveguide is partially etched. 4. The optical waveguide termination of claim 1 further comprising a doped region. 5. The optical waveguide termination of claim 1 wherein the tip comprises a facet angled with respect to an inlet face of the inlet-receiving inlet to further suppress back-reflection. 6. The optical waveguide termination of claim 1 wherein the spiral is a logarithmic spiral. 7. The optical waveguide termination of claim 6 wherein the logarithmic spiral comprises a radius of curvature that varies on a log scale from 5 μm to 1 μm over a length of 30 μm. 8. The optical waveguide termination of claim 1 wherein the light-receiving inlet has an inlet width of 500 nm and the light-terminating tip has a tip width of 200 nm. 9. A photonic platform comprising: a substrate; a buried oxide layer on the substrate; an optical circuit formed in an active silicon layer; and an optical waveguide termination formed in the active silicon layer and connected to the optical circuit, the optical waveguide termination comprising: a light-receiving inlet for receiving light to be terminated; a curved section of a nanotaper waveguide extending from the inlet and having a continuously decreasing radius of curvature; and a light-terminating tip at an end of the curved section; wherein the curved section has a waveguide width that continuously decreases from the inlet to the tip. 10. The photonic platform of claim 9 wherein the optical waveguide is a partially etched silicon waveguide. 11. The photonic platform of claim 9 further comprising a doped region. 12. The photonic platform of claim 9 wherein the tip comprises a facet angled with respect to an inlet face of the inlet-receiving inlet to further suppress back-reflection. 13. The photonic platform of claim 9 wherein the curved section defines a spiral. 14. The photonic platform of claim 13 wherein the spiral is a logarithmic spiral. 15. A method of terminating light, the method comprising: receiving light to be terminated at a light-receiving inlet of an optical waveguide termination; propagating the light through a curved section of a nanotaper waveguide extending from the inlet and having a continuously decreasing radius of curvature; and terminating the light at a light-terminating tip at an end of the curved section; wherein propagating the light through the curved section comprises propagating the light through a spiral waveguide having a waveguide width that continuously decreases from the inlet to the tip. 16. The method of claim 15 further comprising absorbing the light using a doped region.
as light absorbers · CPC title
using ion implantation (ion implantation in glass C03C23/0055; ion implantation in general C23C) · CPC title
Basic optical elements, e.g. light-guiding paths · CPC title
by etching · CPC title
by substitution by dopant atoms · CPC title
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