Load modulation amplifier

Patent metadata

Field	Value
Publication number	US-10523158-B2
Application number	US-201616068377-A
Country	US
Kind code	B2
Filing date	Feb 23, 2016
Priority date	Feb 23, 2016
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

Provided is a load modulation amplifier including: a high frequency circuit board; and on the board, an input distribution circuit unit (DC) including: a distributor for dividing one input signal into two signals IS1 and IS2; and a phase delay circuit formed on a signal line for the divided IS2; a carrier amplifier (CA) including a first high frequency transistor for amplifying the IS1; a peak amplifier (PA) including a second high frequency transistor and for amplifying the IS2; and an output combination circuit (OCCU) including: a 90-degree phase delay circuit (90DC) formed on a signal line for output of the CA; a combiner for combining output of the 90DC and output of the PA; and an impedance conversion circuit for converting an output impedance of the combiner. The CA and the PA are directly connected to the OCCU without converting an output impedance.

First claim

The invention claimed is:

1. A load modulation amplifier, comprising:
a high frequency circuit board;
an input distribution circuit unit, which includes:
a distributor, which is configured to divide one input signal into a first input signal and a second input signal; and
a phase delay circuit, which is formed on a signal line for the divided second input signal;

a carrier amplifier, which includes a first high frequency transistor, and is configured to amplify the first input signal output from the input distribution circuit unit;
a peak amplifier, which includes a second high frequency transistor, and is configured to amplify the second input signal output from the input distribution circuit unit; and
an output combination circuit unit, which includes:
a 90-degree phase delay circuit, which is formed on a signal line for output of the carrier amplifier;
a combiner, which is configured to combine output of the 90-degree phase delay circuit and output of the peak amplifier, the output of the 90-degree phase delay circuit and the output of the peak amplifier are separately inputted into the combiner; and
an impedance conversion circuit, which is configured to convert an output impedance of the combiner,

the input distribution circuit unit, the carrier amplifier, the peak amplifier, and the output combination circuit unit being formed on the high frequency circuit board,
a drain terminal of the first high frequency transistor which forms the carrier amplifier, and a drain terminal of the second high frequency transistor which forms the peak amplifier, are directly connected to the output combination circuit unit without having connection with any impedance conversion circuits between the drain terminals and the output combination circuit unit.

2. A load modulation amplifier, comprising:
a high frequency circuit board;
an input distribution circuit unit, which includes:
a distributor, which is configured to divide one input signal into a first input signal and a second input signal; and
a phase delay circuit, which is formed on a signal line for the divided second input signal;

a carrier amplifier, which includes a first high frequency transistor, and is configured to amplify the first input signal output from the input distribution circuit unit;
a peak amplifier, which includes a second high frequency transistor, and is configured to amplify the second input signal output from the input distribution circuit unit; and
an output combination circuit unit, which includes:
a 90-degree phase delay circuit, which is formed on a signal line for output of the carrier amplifier;
a combiner, which is configured to combine output of the 90-degree phase delay circuit and output of the peak amplifier; and
an impedance conversion circuit, which is configured to convert an output impedance of the combiner,

the input distribution circuit unit, the carrier amplifier, the peak amplifier, and the output combination circuit unit being formed on the high frequency circuit board,
the carrier amplifier including a first resonant circuit configured to resonate with a parasitic capacitance of the first high frequency transistor, and a drain terminal of the first high frequency transistor being directly connected to the output combination circuit unit without through the impedance conversion circuit,
the peak amplifier including a second resonant circuit configured to resonate with a parasitic capacitance of the second high frequency transistor, and
a drain terminal of the second high frequency transistor being directly connected to the output combination circuit unit without through the impedance conversion circuit.

3. The load modulation amplifier according to claim 2 , wherein each of the first resonant circuit and the second resonant circuit includes an inductance element connected in parallel to the signal line.

4. The load modulation amplifier according to claim 1 ,
wherein the load modulation amplifier includes a monolithic integrated circuit, and
wherein the 90-degree phase delay circuit of the output combination circuit unit is formed of the signal line on the high frequency circuit board.

5. The load modulation amplifier according to claim 1 ,
wherein the load modulation amplifier includes a monolithic integrated circuit, and
wherein the 90-degree phase delay circuit of the output combination circuit unit is formed of a circuit element of an HPF type or an LPF type.

6. The load modulation amplifier according to claim 4 ,
wherein the phase delay circuit of the input distribution circuit unit is formed of the signal line on the high frequency circuit board.

7. The load modulation amplifier according to claim 4 ,
wherein the phase delay circuit of the input distribution circuit unit is formed of a circuit element of an HPF type or an LPF type.

8. The load modulation amplifier according to claim 2 ,
wherein the load modulation amplifier includes a monolithic integrated circuit, and
wherein the 90-degree phase delay circuit of the output combination circuit unit is formed of the signal line on the high frequency circuit board.

9. The load modulation amplifier according to claim 3 ,
wherein the load modulation amplifier includes a monolithic integrated circuit, and
wherein the 90-degree phase delay circuit of the output combination circuit unit is formed of the signal line on the high frequency circuit board.

10. The load modulation amplifier according to claim 2 ,
wherein the load modulation amplifier includes a monolithic integrated circuit, and
wherein the 90-degree phase delay circuit of the output combination circuit unit is formed of a circuit element of an HPF type or an LPF type.

11. The load modulation amplifier according to claim 3 ,
wherein the load modulation amplifier includes a monolithic integrated circuit, and
wherein the 90-degree phase delay circuit of the output combination circuit unit is formed of a circuit element of an HPF type or an LPF type.

12. The load modulation amplifier according to claim 8 ,
wherein the phase delay circuit of the input distribution circuit unit is formed of the signal line on the high frequency circuit board.

13. The load modulation amplifier according to claim 5 ,
wherein the phase delay circuit of the input distribution circuit unit is formed of the signal line on the high frequency circuit board.

14. The load modulation amplifier according to claim 10 ,
wherein the phase delay circuit of the input distribution circuit unit is formed of the signal line on the high frequency circuit board.

15. The load modulation amplifier according to claim 8 ,
wherein the phase delay circuit of the input distribution circuit unit is formed of a circuit element of an HPF type or an LPF type.

16. The load modulation amplifier according to claim 5 ,
wherein the phase delay circuit of the input distribution circuit unit is formed of a circuit element of an HPF type or an LPF type.

17. The load modulation amplifier according to claim 10 ,
wherein the phase delay circuit of the input distribution circuit unit is formed of a circuit element of an HPF type or an LPF type.

Assignees

• Mitsubishi Electric Corp

Inventors

• Shinjo Shintaro
• Komatsuzaki Yuji
• Nakatani Keigo
• Yamanaka Koji

Classifications

• H03F2200/399

  A parallel resonance being added in shunt in the output circuit, e.g. base, gate, of an amplifier stage · CPC title

• H03F2200/391

  the output circuit of an amplifying stage comprising an LC-network · CPC title

• H03F2200/222

  A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier · CPC title

• H03F3/195

  in integrated circuits · CPC title

• H03F2200/387

  A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier · CPC title