Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10522429-B2
Application number	US-201615088127-A
Country	US
Kind code	B2
Filing date	Apr 1, 2016
Priority date	Nov 30, 2015
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

A method of manufacturing a semiconductor device is provided. The method includes the following operations. (a) A substrate is patterned. (b) A polymer layer is formed on the patterned substrate. (c) The polymer layer is patterned. Steps (a), (b) and (c) are repeated alternatingly. An intensity of an emission light generated by a reaction of a plasma and a product produced in steps (a), (b) and (c) is detected. An endpoint in patterning the substrate is determined according to the intensity of the emission light generated by the reaction of the plasma and the product produced in only one step of steps (a), (b) and (c). A sampling rate of the intensity is ranged from 1 pt/20 ms to 1 pt/100 ms. A smooth function is used to process the intensity of the emission light generated by the reaction of the plasma and the product.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
receiving a substrate attached to an intermediate layer disposed on a carrier substrate, wherein a recess is defined within the substrate, the intermediate layer, and the carrier substrate;
after the receiving, patterning the substrate;
forming a polymer layer on the patterned substrate;
patterning the polymer layer;
alternatingly repeating the patterning the substrate, the forming the polymer layer, and the patterning the polymer layer;
detecting an intensity of an emission light generated by a reaction of a plasma and a product produced during the patterning the substrate, the forming the polymer layer, and the patterning the polymer layer, wherein a sampling rate of the intensity ranges from about one sampling point per 20 microseconds to about one sampling point per 100 microseconds; and
determining an endpoint in patterning the substrate according to the intensity of the emission light generated by the reaction of the plasma and the product during the patterning the substrate, the forming the polymer layer, or the patterning the polymer layer, wherein the endpoint indicates that the patterning the substrate has passed through the substrate to the recess defined within the substrate, the intermediate layer, and the carrier substrate.

2. The method of claim 1 , wherein the endpoint in patterning the substrate is determined according to the intensity of the emission light generated by the reaction of the plasma and the product produced during the patterning the substrate.

3. The method of claim 1 , wherein the endpoint in patterning the substrate is determined according to the intensity of the emission light generated by the reaction of the plasma and the product produced during the forming the polymer layer.

4. The method of claim 1 , wherein the endpoint in patterning the substrate is determined according to the intensity of the emission light generated by the reaction of the plasma and the product produced during the patterning the polymer layer.

5. The method of claim 1 , wherein:
the patterning the substrate includes removing portions of the substrate to form a trench;
the forming the polymer layer includes depositing the polymer layer along sidewalls and a bottom surface of the trench; and
the patterning the polymer layer includes removing the polymer layer from the bottom surface of the trench.

6. The method of claim 5 , wherein:
the patterning the substrate further includes forming a patterned masking layer over the substrate.

7. A method of manufacturing a semiconductor device, comprising:
patterning a silicon substrate in a first phase, wherein the silicon substrate is attached to a carrier substrate by an intermediate layer and a cavity is defined within the silicon substrate, the intermediate layer, and the carrier substrate;
forming a fluorocarbon-based polymer layer on the patterned silicon substrate in a second phase;
patterning the fluorocarbon-based polymer layer in a third phase;
alternatingly repeating the first phase, the second phase, and the third phase, wherein a duration of each of the first phase, the second phase, and the third phase ranges from about 0.2 seconds to about ten seconds;
detecting an intensity of an emission light generated by fluorocarbons during the first phase, the second phase, and the third phase, wherein a sampling rate of the intensity ranges from about one sampling point per 20 microseconds to about one sampling point per 100 microseconds; and
determining an endpoint in patterning the silicon substrate according to the intensity of the emission light generated by the fluorocarbons during the first phase, wherein the endpoint indicates that a trench extends through an entire thickness of the silicon substrate to expose the cavity defined within the silicon substrate, the intermediate layer, and the carrier substrate.

8. The method of claim 7 , wherein the duration of each of the first phase, the second phase, and the third phase is about 0.5 seconds.

9. The method of claim 7 , wherein the duration of the first phase is about 0.5 seconds, the duration of the second phase is about 0.4 seconds, and the duration of the third phase is about 0.5 seconds.

10. The method of claim 7 , wherein the duration of the first phase is longer than the duration of the second phase and the duration of the third phase is longer than the duration of the second phase.

11. The method of claim 7 , wherein:
the patterning the silicon substrate includes forming a patterned masking layer over the silicon substrate, wherein the patterned masking layer exposes a portion of the silicon substrate, and
etching the exposed portion of the silicon substrate.

12. The method of claim 7 , wherein:
the patterning the silicon substrate includes removing portions of the silicon substrate to form the trench;
the forming the fluorocarbon-based polymer layer includes depositing the fluorocarbon-based polymer layer along sidewalls and a bottom surface of the trench;
the patterning the fluorocarbon-based polymer layer includes removing the fluorocarbon-based polymer layer from the bottom surface of the trench; and
the patterning the silicon substrate, the forming the fluorocarbon-based polymer layer, and the patterning the fluorocarbon-based polymer layer are alternatingly repeated until the trench extends through the silicon substrate.

13. A method of manufacturing a semiconductor device, comprising:
attaching a first surface of a first substrate to an intermediate layer disposed on a second substrate, wherein a portion of the second substrate is recessed away from the first surface of the first substrate, such that a recess is defined within the first substrate, the intermediate layer, and the second substrate;
after attaching the first surface of the first substrate to the intermediate layer disposed on the second substrate, performing a patterning cycle having a duration of about 0.2 seconds to about ten seconds, wherein the patterning cycle includes:
etching the first substrate to form a trench, wherein the etching is directed to a second surface of the first substrate that is opposite the first surface,
depositing a polymer layer on sidewall surfaces and a bottom surface of the trench, and
etching the polymer layer from the bottom surface of the trench;

detecting an intensity of an emission light generated by a reaction of a plasma and a product produced during the patterning cycle, wherein the intensity is measured at 100 microseconds or less intervals;
using a smooth moving average function to generate successive intensity measurements representing the intensity of the emission light generated by the reaction of the plasma and the product, wherein each successive intensity measurement is generated from a set of successive sampling points; and
repeating the patterning cycle until the successive intensity measurements generated by the smooth moving average function indicate that the trench extends from the second surface of the first substrate to the first surface of the first substrate, thereby exposing the recess defined within the first substrate, the intermediate layer, and the second substrate.

14. The method of claim 13 , wherein the smooth moving average function is used to process the intensity of the emission light generated by the reaction of the plasma and the product produced during the etching of the first substrate.

15. The method of claim 13 , wherein the smooth moving average function is used to process the intensity of the emission light generated by the reaction of the p

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tseng Lee-Chuan
• Wu Chang-Ming

Classifications

• H10P50/244 Primary

  comprising alternated and repeated etching and passivation steps · CPC title

• H10P74/238 Primary

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H01J37/32972

  Spectral analysis · CPC title

• B81C1/00587

  Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579 · CPC title

• B81C2201/0132

  Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling · CPC title