Method for performing electropolishing treatment on aluminum material
US-2016376725-A1 · Dec 29, 2016 · US
US10519562B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10519562-B2 |
| Application number | US-201715678256-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 16, 2017 |
| Priority date | Aug 17, 2016 |
| Publication date | Dec 31, 2019 |
| Grant date | Dec 31, 2019 |
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In example implementations, a method for producing a thin film coating is provided. The method includes pre-treating a substrate, placing the substrate in a bath comprising at least phosphoric acid and sulphuric acid to produce a thin anodized layer, rinsing the thin anodized layer in a solution, plating a surface of the thin anodized layer in an electro deposition bath following a plating current profile for a predetermined period, and increasing the plating current to the recommended bath plating current to produce the thin film coating having a desired initial coating thickness.
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The invention claimed is: 1. A method for producing a coating, comprising: pre-treating a substrate; placing the substrate in a bath comprising at least phosphoric acid and sulphuric acid and anodizing the substrate to produce a thin anodized layer; rinsing the thin anodized layer in a solution; plating a surface of the thin anodized layer in a single electro deposition bath following a plating current profile for a predetermined period, wherein the plating current profile is selected as a percentage of a nominal plating current that is applied via a direct current or a pulsed direct current, wherein the plating current profile comprises ramping the plating current from 0 to between 0.1 amperes per square decimeter (A/dm 2 ) and 2.0 A/dm 2 for a first time period, then holding the plating current constant at a value between 0.1 A/dm 2 and 2.0 A/dm 2 for a second time period; and increasing the plating current from the value between 0.1 A/dm 2 and 2.0 A/dm 2 to a recommended bath plating current to produce the coating having a desired initial coating thickness. 2. The method of claim 1 , wherein the substrate comprises aluminium. 3. The method of claim 1 , wherein the substrate comprises any one of titanium and magnesium. 4. The method of claim 1 , wherein the thin anodized layer has a thickness between approximately 2 microns and 10 microns. 5. The method of claim 1 , wherein the pre-treating comprises: degreasing the substrate in an alkaline bath; roughening the substrate in a solution; and etching the substrate in a nitric acid solution. 6. The method of claim 1 , wherein the solution for the rinsing comprises a bath of between 0.5 milliliters per liter (mL/L) to 5 mL/L of hydrofluoric acid. 7. The method of claim 1 , wherein the rinsing the thin anodized layer minimizes interference on the coating to produce a uniform film. 8. The method of claim 1 , wherein the thin anodized layer is produced at room temperature and at a constant voltage. 9. The method of claim 8 , wherein the constant voltage is between 30 Volts (V) and 60V. 10. The method of claim 1 , wherein the percentage is selected based on a thickness of the thin anodized layer and a time sufficient to fill anodized pores of the surface that is plated. 11. The method of claim 1 , wherein the percentage is between 5% and 50% of the nominal plating current. 12. The method of claim 1 , wherein the plating current profile is obtained via a process comprising: holding the plating current constant at the value between 0.12 A/dm 2 and 2.0 A/dm 2 for the second time period that is sufficient to fill anodizing pores of the surface that is plated; and increasing the plating current to the recommended bath plating current for a third period of time sufficient to provide a uniform coating over the thin anodized layer.
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