Grinding element, grinding wheel and manufacturing method of semiconductor package using the same

Patent metadata

Field	Value
Publication number	US-10518387-B2
Application number	US-201715652244-A
Country	US
Kind code	B2
Filing date	Jul 18, 2017
Priority date	Jul 18, 2017
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

A grinding element mounted on a grinding wheel and a grinding wheel containing the same are provided for grinding. The grinding element includes a grinding tooth, and the grinding tooth includes a grinding material having a framework structure and pores distributed in the framework structure. The framework structure includes a bond material and abrasive particles that are bonded by the bond material. A pore size of the pores is larger than 40 microns but smaller than 70 microns. A manufacturing method for semiconductor packages using the same is also provided.

First claim

What is claimed is:

1. A grinding element of a grinding wheel, comprising:
a grinding tooth including a grinding material having
a framework structure comprising abrasive particles and a bond material bonding the abrasive particles, wherein the bond material is a resin bond material, and
pores distributed in the framework structure,
wherein a pore size of the pores is greater than 40 microns and less than 70 microns, and the pores take about 55% volume per volume (% v/v) to about 70% v/v of a total volume of the grinding material.

2. The element according to claim 1 , wherein the pores take about 60% v/v of the total volume of the grinding material.

3. The element according to claim 1 , wherein a particle size of the abrasive particles ranges from about 1.5 microns to about 20 microns, and a weight ratio of the abrasive particles to the bond material ranges from 3:1 to 5:1.

4. The element according to claim 3 , wherein the particle size of the abrasive particles ranges from about 3 microns to about 20 microns, and the weight ratio of the abrasive particles to the bond material is about 4.5:1.

5. The element according to claim 1 , wherein the bond material includes a thermosetting resin binder.

6. The element according to claim 1 , wherein the abrasive particles include diamond particles, alumina particles, silicon carbide particles or cubic boron nitride particles.

7. The element according to claim 1 , wherein the pore size of the pores ranges from about 40 microns to about 60 microns, the abrasive particles are diamond particles having an average particle size ranging from about 3 microns to about 20 microns, and a weight ratio of the abrasive particles to the bond material is about 4.5:1.

8. A grinding wheel, comprising:
a ring shaped metal base; and
a plurality of grinding teeth mounted on a surface of the metal base,
wherein the plurality of grinding teeth is separate from one another by a distance and are arranged along an outer rim portion of the metal base,
wherein each of the plurality of grinding teeth includes a grinding material having a framework structure including abrasive particles and a bond material bonding the abrasive particle, and pores distributed in the framework structure, wherein the bond material is a resin bond material, and
wherein the pores take about 55% volume per volume (% v/v) to about 70% v/v of a total volume of the grinding material, a pore size of the pores is greater than 40 microns and less than 70 microns, and a weight ratio of the abrasive particles to the bond material ranges from 3:1 to 5:1.

9. The wheel according to claim 8 , wherein each of the plurality of grinding teeth is a block structure made of the grinding material.

10. The wheel according to claim 8 , wherein each of the plurality of grinding teeth is a rectangular block and at least an outermost portion of the block includes the grinding material.

11. The wheel according to claim 8 , wherein the bond material includes at least one material selected from phenol resins, synthetic rubber resins or urethane resins.

12. The wheel according to claim 8 , wherein the pores take about 60% v/v of the total volume of the grinding material.

13. The wheel according to claim 8 , wherein a particle size of the abrasive particles ranges from about 1.5 microns to about 20 microns.

14. The wheel according to claim 13 , wherein the particle size of the abrasive particles ranges from about 3 microns to about 20 microns, and the weight ratio of the abrasive particles to the bond material is about 4.5:1.

15. The wheel according to claim 8 , wherein the bond material includes a thermosetting resin binder, and the abrasive particles include diamond particles, alumina particles, silicon carbide particles or cubic boron nitride particles.

16. The wheel according to claim 8 , wherein a pore size of the pores ranges from about 40 microns to about 60 microns, the abrasive particles are diamond particles having an average particle size ranging from about 3 microns to about 20 microns, and a weight ratio of the abrasive particles to the bond material is about 4.5:1.

17. A manufacturing method for a semiconductor package, comprising:
providing a carrier;
forming through vias on the carrier and disposing chips on the carrier;
forming a molding compound encapsulating the chips and the through vias;
grinding the molding compound using a grinding wheel having grinding teeth including a grinding material, so as to expose the through vias;
forming a redistribution layer on the molding compound and on the chips, wherein the redistribution layer is electrically connected to the through vias and the chips; and
mounting conductive elements on the redistribution layer, wherein the conductive elements are electrically connected to the chips and the through vias, and
wherein the grinding material includes a framework structure including abrasive particles and a resin bond material bonding the abrasive particles, and pores distributed in the framework structure taking about 55% volume per volume (% v/v) to about 70% v/v of a total volume of the grinding material, and a pore size of the pores being larger than 40 microns and smaller than 70 microns.

18. The method according to claim 17 , wherein the grinding the molding compound comprises grinding the molding compound to expose metal posts of the chips.

19. The method according to claim 17 , wherein a pore size of the pores ranges from about 40 microns to about 60 microns, the abrasive particles are diamond particles having an average particle size ranging from about 3 microns to about 20 microns, and a weight ratio of the abrasive particles to the resin bond material ranges from 3:1 to 5:1.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Mao yi-chao
• Chang Chin-Chuan
• Lin Jing-Cheng
• Chang Wen-Hua

Classifications

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title

• H10W70/099

  Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W72/874

  On different surfaces · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title