Switch circuit, ultrasound probe using the same, and ultrasonic diagnosis apparatus

Patent metadata

Field	Value
Publication number	US-10517570-B2
Application number	US-201415313147-A
Country	US
Kind code	B2
Filing date	Jun 13, 2014
Priority date	Jun 13, 2014
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

A transmit receive switch circuit has a first MOSFET (MN 1 ) and a second MOSFET (MN 2 ), goes into a switch-off state at the time of transmission, and goes into a switch-on state at the time of reception. The first MOSFET (MN 1 ) and the second MOSFET (MN 2 ) are connected between an input terminal (SWIN) and an output terminal (SWOUT). The switch circuit includes a shunt circuit (SHNT) that is connected between a common gate (COMG) and a common source (COMS), the common gate being connected to the gates of the first and second MOSFETs, and the common source being connected to the sources of the first and second MOSFETs. When a signal having a negative voltage relative to a reference voltage is applied to the input terminal, a switch that temporarily turns on causes the shunt circuit to short-circuit the common gate and the common source.

First claim

The invention claimed is:

1. A switch circuit that has a first MOSFET and a second MOSFET, and goes into a switch-off state at the time of transmission and goes into a switch-on state at the time of reception, the first MOSFET and the second MOSFET being connected between an input terminal and an output terminal, the switch circuit comprising:
a shunt circuit that is connected between a common gate and a common source, the common gate being connected to gates of the first MOSFET and the second MOSFET, the common source being connected to sources of the first MOSFET and the second MOSFET,
wherein, when a signal having a negative voltage relative to a reference voltage is applied to the input terminal, a switch that temporarily turns on causes the shunt circuit to short-circuit the common gate and the common source, and
wherein the shunt circuit includes:
a filter that is connected between the common gate and the common source and formed of a resistor and a capacitor; and
a third MOSFET that is connected to the filter and is used as the switch.

2. The switch circuit according to claim 1 ,
wherein the third MOSFET of the shunt circuit short-circuits the common gate and the common source when the voltage between the common gate and the common source increases with a time constant not greater than a time constant equal to the product of the resistance value of the resistor and the capacitance value of the capacitor; and
wherein the time constant equal to the product of the resistance value of the resistor and the capacitance value of the capacitor is adjustable.

3. The switch circuit according to claim 2 ,
wherein the first MOSFET and the second MOSFET have a higher withstanding voltage than the third MOSFET.

4. The switch circuit according to claim 3 , further comprising:
a resistor that is connected between the common gate and the common source and in parallel with the shunt circuit in order to maintain the switch-off state by avoiding the floating of the common gate as viewed from the common source in the switch-off state.

5. The switch circuit according to claim 3 , further comprising:
diodes that are connected to the output terminal in order to clamp high-potential side and low-potential side with respect to the reference voltage of a signal applied to the input terminal in the switch-on state.

6. The switch circuit according to claim 3 , further comprising:
a fourth MOSFET that is connected to the output terminal in order to short-circuit the output terminal with respect to the reference voltage of a signal applied to the input terminal in the switch-on state;
wherein the fourth MOSFET has a lower withstanding voltage than the first MOSFET and the second MOSFET.

7. The switch circuit according to claim 3 , further comprising:
a fifth MOSFET that is connected to the common gate in order to invoke, when turned on, the switch-on state by applying a predetermined supply voltage to the common gate, and invoke, when turned off, the switch-off state by setting the voltage between the common gate and the common source to a voltage not higher than a threshold voltage;
wherein the fifth MOSFET has a higher withstanding voltage than the third MOSFET.

8. The switch circuit according to claim 7 ,
wherein the fifth MOSFET is controlled by a logical high or logical low control signal having a voltage lower than the withstanding voltage of the fifth MOSFET.

9. The switch circuit according to claim 8 ,
wherein a source of the fifth MOSFET is controlled by a logical high or logical low control signal having a voltage lower than the withstanding voltage of the fifth MOSFET; and
wherein, when a transition is made between the switch-on state and the switch-off state, a logic circuit driving the control signal supplies a charge/discharge current for the common gate through the fifth MOSFET.

10. An ultrasound probe using the switch circuit according to claim 1 , the ultrasound probe comprising:
a transmitter circuit that transmits a signal having a first voltage to drive a transducer;
a receiver circuit that receives a signal having a second voltage from the transducer, the second voltage being lower than the first voltage; and
the switch circuit that goes into the switch-off state at the time of transmission in order to isolate the receiver circuit from a signal transmitted from the transmitter circuit, and goes into the switch-on state at the time of reception in order to allow a signal from the transducer to pass to the receiver circuit.

11. The ultrasound probe according to claim 10 , comprising:
a plurality of units of the transmitter circuit;
a plurality of units of the receiver circuit;
a plurality of units of the switch circuit; and
an adder circuit that adds signals from the plurality of units of the receiver circuit.

12. The ultrasound probe according to claim 11 ,
wherein the plurality of units of the transmitter circuit, the plurality of units of the receiver circuit, the plurality of units of the switch circuit, and the adder circuit form a subarray; and
wherein a plurality of units of the subarray are included in the ultrasound probe.

13. The ultrasound probe according to claim 12 ,
wherein the plurality of units of the transmitter circuit, the plurality of units of the receiver circuit, the plurality of units of the switch circuit, and the adder circuit, which are included in the plurality of units of the subarray, are formed of an integrated circuit; and
wherein the integrated circuit is superimposed over two-dimensionally arrayed units of the transducer.

14. An ultrasonic diagnosis apparatus using the ultrasound probe according to claim 10 , the ultrasonic diagnosis apparatus comprising:
the ultrasound probe; and
a main unit that not only controls the ultrasound probe but also performs image processing.

Assignees

• Hitachi Ltd

Inventors

• Kajiyama Shinya
• Igarashi Yutaka
• Yazaki Toru

Classifications

• H03K17/102

  in field-effect transistor switches · CPC title

• A61B8/4483 Primary

  characterised by features of the ultrasound transducer · CPC title

• A61B8/5207

  involving processing of raw data to produce diagnostic data, e.g. for generating an image · CPC title

• H03K17/10

  Modifications for increasing the maximum permissible switched voltage · CPC title

• H03K17/687

  the devices being field-effect transistors · CPC title