Methods and apparatus for vertically stacked multicolor light-emitting diode (LED) display

Patent metadata

Field	Value
Publication number	US-10517155-B2
Application number	US-201816156250-A
Country	US
Kind code	B2
Filing date	Oct 10, 2018
Priority date	Feb 24, 2017
Publication date	Dec 24, 2019
Grant date	Dec 24, 2019

Abstract

A method of fabricating a multicolor light-emitting diode (LED) display includes forming a first LED layer on a first release layer comprising a first two-dimensional (2D) material disposed on a first substrate. The first LED layer is configured to emit light at a first wavelength. The method also includes transferring the first LED layer from the first release layer to a host substrate and forming a second LED layer on a second release layer comprising a second 2D material disposed on a second substrate. The second LED layer is configured to emit light at a second wavelength. The method also includes removing the second LED layer from the second release layer and disposing the second LED layer on the first LED layer.

First claim

The invention claimed is:

1. A method of fabricating a multicolor light-emitting diode (LED) display, the method comprising:
forming a first LED layer on a first release layer comprising a first two-dimensional (2D) material disposed on a first substrate, the first LED layer being configured to emit light at a first wavelength;
transferring the first LED layer from the first release layer to a host substrate;
forming a second LED layer on a second release layer comprising a second 2D material disposed on a second substrate, the second LED layer being configured to emit light at a second wavelength;
removing the second LED layer from the second release layer; and
disposing the second LED layer on the first LED layer.

2. The method of claim 1 , wherein forming the first LED layer comprises epitaxially growing the first LED layer on the first release layer.

3. The method of claim 1 , wherein forming the first LED layer comprises epitaxially growing crystalline inorganic semiconductor on the first release layer.

4. The method of claim 3 , wherein the first substrate comprises the crystalline inorganic semiconductor.

5. The method of claim 1 , wherein the first 2D material comprises graphene.

6. The method of claim 5 , wherein the second 2D material comprises graphene.

7. The method of claim 1 , wherein the first 2D material is the same as the second 2D material.

8. The method of claim 1 , wherein the host substrate is flexible and substantially transparent to the light at the first wavelength and the light at the second wavelength.

9. The method of claim 1 , further comprising:
forming a third LED layer on a third release layer comprising a third 2D material disposed on a third substrate, the third LED layer being configured to emit light at a third wavelength;
removing the third LED layer from the third release layer; and
disposing the third LED layer on the second LED layer.

10. The method of claim 9 , wherein the first wavelength is in a range of about 580 nm to about 760 nm, the second wavelength is in a range of about 490 nm to about 580 nm, and the third wavelength is in a range of about 390 nm to about 490 nm.

11. The method of claim 9 , wherein the first LED layer has a first side wall, the second LED layer has a second side wall, the third LED layer has a third side wall and a top surface, and the method further comprises:
forming a passivation layer on the first side wall, the second side wall, the third side wall, and the top surface of the third LED layer.

12. The method of claim 11 , further comprising:
forming a first transistor, a second transistor, and a third transistor on the passivation layer;
electrically connecting the first transistor to the first LED layer;
electrically connecting the second transistor to the second LED layer; and
electrically connecting the third transistor to the third LED layer.

13. The method of claim 12 , wherein forming the first transistor comprises:
forming an indium gallium zinc oxide (IGZO) layer above the third LED layer; and
forming a first base electrode, a first emitter electrode, and a first collector electrode on the IGZO layer.

14. The method of claim 9 , further comprising:
forming a fourth LED layer on the first release layer after transferring the first LED layer to the host substrate, the fourth LED layer being configured to emit light at the first wavelength.

15. The method of claim 1 , further comprising:
forming a first electrode layer on the first LED layer; and
forming a second electrode layer on the second LED layer,
wherein disposing the second LED layer on the first LED layer comprises bonding the first electrode layer with the second electrode layer.

16. The method of claim 15 , wherein forming the first electrode layer comprises forming a first array of metal strips on the first LED layer and forming the second electrode layer comprises forming a second array of metal strips on the second LED layer.

17. The method of claim 1 , further comprising:
depositing conductive polymer on the first LED layer,
wherein disposing the second LED layer on the first LED layer comprises disposing the second LED layer on the conductive polymer.

18. The method of claim 1 , wherein the host substrate is substantially transparent to the light at the first wavelength and the light at the second wavelength.

Assignees

• Massachusetts Inst Technology

Inventors

• Lee Kyusang
• Kong Wei
• Kim Jeehwan

Classifications

• H10W90/00

  Package configurations · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10P90/00 Primary

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title

• B32B2457/00

  Electrical equipment · CPC title

• B32B38/10

  Removing layers, or parts of layers, mechanically or chemically · CPC title