Laserdiode

Patent metadata

Field	Value
Publication number	US-10516252-B2
Application number	US-201815902045-A
Country	US
Kind code	B2
Filing date	Feb 22, 2018
Priority date	Feb 23, 2017
Publication date	Dec 24, 2019
Grant date	Dec 24, 2019

Abstract

A laser diode includes an active zone that emits radiation in a lateral emission angle range in a plane of the active zone via an emission side of a layer arrangement, an electrical contact is configured on a top side of the layer arrangement, the electrical contact includes a metallic adhesion layer and at least one metallic contact layer, the adhesion layer is arranged on the layer arrangement, the adhesion layer includes a layer stack including a first and a second layer, the first layer is arranged on the layer arrangement, the first layer is configured in a planar fashion, the second layer is subdivided into at least one first and at least one second partial surface, the adhesion layer is arranged in the first partial surface, and the contact layer is arranged on the first partial surface and in the second partial surface.

First claim

The invention claimed is:

1. A laser diode comprising a layer arrangement comprising at least two semiconductor layers arranged one above another, wherein the semiconductor layers form an active zone in a plane, the active zone generates an electromagnetic radiation, the active zone emits the radiation in a lateral emission angle range in the plane of the active zone via an emission side of the layer arrangement, an electrical contact is configured on a top side of the layer arrangement, the electrical contact comprises a metallic adhesion layer and at least one metallic contact layer, the adhesion layer is arranged on the layer arrangement, the adhesion layer comprises a layer stack comprising a first and a second layer, the first layer is arranged on the layer arrangement, the first layer is configured in a planar fashion, the second layer is subdivided into at least one first and at least one second partial surface, the adhesion layer is arranged in the first partial surface, the second partial surface is free of the adhesion layer, the contact layer is arranged on the first partial surface of the second layer, the contact layer is arranged in the second partial surface and directly on the first layer of the adhesion layer.

2. The laser diode according to claim 1 , wherein an electrically conductive strain layer is arranged as a layer within the contact layer, and the strain layer comprises a thickness and/or a structure to influence the lateral emission angle range.

3. The laser diode according to claim 1 , wherein an electrically conductive strain layer is arranged as a layer within the contact layer, the strain layer comprises a thickness and/or a structure to influence the lateral emission angle range, and the strain layer comprises or consists of titanium or TiWN.

4. The laser diode according to claim 1 , wherein the contact layer comprises a platinum layer and a gold layer, the platinum layer is arranged on the adhesion layer, and the gold layer is arranged on the platinum layer.

5. The laser diode according to claim 1 , wherein the adhesion layer comprises titanium or is formed from titanium.

6. The laser diode according to claim 1 , wherein the first and/or the second partial surfaces are arranged in a grid with defined spacings, an electrically conductive strain layer is arranged within the contact layer, and the strain layer comprises a thickness and/or a structure to influence the lateral emission angle range.

7. The laser diode according to claim 1 , wherein the adhesion is used as a strain layer, wherein the lateral emission angle range depends on a thickness of the adhesion layer or a structuring of the adhesion layer, wherein the lateral emission angle range is reduced by a reduction of the layer thickness of the adhesion layer or a structuring of the adhesion layer.

8. A laser diode comprising a layer arrangement comprising at least two semiconductor layers arranged one above another, wherein the semiconductor layers form an active zone in a plane, the active zone generates an electromagnetic radiation, the active zone emits the radiation in a lateral emission angle range in the plane of the active zone via an emission side of the layer arrangement, an electrical contact is configured on a top side of the layer arrangement, the electrical contact comprises a metallic adhesion layer and at least one metallic contact layer, the adhesion layer is arranged directly on the layer arrangement, the adhesion layer comprises adhesion material, the adhesion layer comprises a layer stack comprising a first and a second layer, the first layer is arranged on the layer arrangement, the first layer is made of adhesion material and configured in a planar fashion, the second layer is subdivided into at least one first and at least one second partial surface, the adhesion material is arranged in the first partial surface of the second layer, the second partial surface of the second layer is free of the adhesion material, the adhesion material of the first layer is the same as the adhesion material of the first partial surface of the second layer, the contact layer is directly arranged on the first partial surface of the second layer, and the contact layer is arranged in the second partial surface of the second layer directly on the first layer.

9. The laser diode according to claim 8 , wherein the adhesion layer comprises titanium or is formed from titanium.

10. The laser diode according to claim 8 , wherein the second layer of the adhesion layer is subdivided into one first and at least two second partial surfaces, wherein the second partial surfaces are surrounded by the first partial surface, wherein the adhesion material is arranged in the first partial surface of the second layer, wherein the two second partial surfaces of the second layer are free of adhesion material, wherein the contact layer is directly arranged on the first partial surface of the second layer, wherein the contact layer is arranged in the two second partial surfaces of the second layer and within the second partial surfaces directly on the first layer.

11. The laser diode according to claim 8 , wherein the adhesion is used as a strain layer, wherein the lateral emission angle range depends on a thickness of the adhesion layer or a structuring of the adhesion layer, wherein the lateral emission angle range is reduced by a reduction of the layer thickness of the adhesion layer or a structuring of the adhesion layer.

12. The laser diode according to claim 8 , wherein a strain layer is arranged as an electrically conductive layer within the metal contact, the strain layer comprises a thickness and/or a structure to influence the lateral emission angle of the laser diode, wherein the strain layer is made of a different material than the metal contact.

13. The laser diode according to claim 12 , wherein the strain layer comprises metal or is formed from metal.

14. The laser diode of claim 12 , wherein the strain layer extends over the entire surface of the electrical contact.

15. A laser diode comprising a layer arrangement comprising at least two semiconductor layers arranged one above another, wherein the semiconductor layers form an active zone in a plane, the active zone generates an electromagnetic radiation, the active zone emits the radiation in a lateral emission angle range in the plane of the active zone via an emission side of the layer arrangement, an electrical contact is configured on a top side of the layer arrangement, the electrical contact comprises a metallic adhesion layer and at least one metallic contact layer, the adhesion layer is directly arranged on the layer arrangement, the adhesion layer comprises adhesion material, the adhesion layer comprises a layer stack comprising a first and a second layer, the first layer is arranged on the layer arrangement, the first layer is made of adhesion material and configured in a planar fashion, the second layer is subdivided into at least one first and at least one second partial surface, the adhesion material is arranged in the first partial surface of the second layer, the second partial surface of the second layer is free of the adhesion material, the contact layer is directly arranged on the first partial surface of the second layer, the contact layer is arranged in the second partial surface of the second layer directly on the first layer, wherein the adhesion layer is used as a strain layer, and the lateral emission angle range depends on a thickness of the adhesion layer or a structuring of the adhesion layer.

16. The laser diode of claim 15 , wherein the adhesion material in the first la

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Bachmann Alexander
• Grossmann Volker

Classifications

• H01S5/04254

  characterised by the shape · CPC title

• H01S5/04252

  characterised by the material · CPC title

• H01S2301/18

  Semiconductor lasers with special structural design for influencing the near- or far-field · CPC title

• H01S2301/176

  Specific passivation layers on surfaces other than the emission facet · CPC title

• H01S5/22

  having a ridge or stripe structure · CPC title