Absorber surface modification

Patent metadata

Field	Value
Publication number	US-10516069-B2
Application number	US-201414517961-A
Country	US
Kind code	B2
Filing date	Oct 20, 2014
Priority date	Oct 20, 2014
Publication date	Dec 24, 2019
Grant date	Dec 24, 2019

Abstract

The present disclosure provides systems and methods for depositing an alkaline metal layer on an absorber to generate a copper-poor region at a surface of the absorber. The copper-poor region provides an increased efficiency over non-treated absorbers having copper-rich surfaces. The alkaline metal layer may be deposited by any suitable deposition method, such as, for example, a wet deposition method. After the alkaline metal layer is deposited, the absorber is annealed, causing the alkaline metal layer to interact with the absorber to reduce the copper-profile of the absorber at the interface between the alkaline metal layer and the absorber.

First claim

What is claimed is:

1. A method for forming a photovoltaic cell, comprising:
forming an absorber on a back electrode;
forming an alkaline metal layer on the absorber by depositing a solution comprising a concentration of an alkaline metal in a range from 0.01 M to 0.05 M on a surface of the absorber;
reducing the copper content of the absorber at the surface, wherein the surface includes at least a −5% copper depletion range, wherein the copper content is reduced by annealing the absorber and the alkaline metal layer in an annealing chamber, wherein the annealing chamber is filled with an annealing gas at a starting temperature greater than 200° C. at a pressure of 500-650 torr, and wherein the annealing gas is heated at a temperature ramp rate of 7° C.-20° C. per minute to a temperature of 350° C.-450° C., and wherein the annealing occurs a predetermined time period after forming the alkaline metal layer on the absorber; and
removing the alkaline metal layer after annealing the absorber.

2. The method of claim 1 , wherein the solution is deposited by a spray process.

3. The method of claim 1 , wherein the solution is deposited by a dip process.

4. The method of claim 1 , wherein the solution comprises one of a potassium-based solution or a sodium-based solution.

5. The method of claim 4 , wherein the solution comprises a predetermined concentration of at least one of NaF, NaCl, NaBr, KF, KCl, or KBr.

6. The method of claim 1 , further comprising drying the absorber after depositing the solution.

7. The method of claim 6 , wherein drying the absorber comprises the step of heating the absorber to a temperature from about 50° C. to about 100° C.

8. The method of claim 1 , wherein annealing the absorber comprises the step of exposing the absorber to an annealing gas.

9. The method of claim 8 , wherein the annealing gas comprises one of a sulfur vapor, a selenium vapor, H2S gas, or H2Se gas.

10. A system, comprising:
an alkaline metal solution having a concentration of an alkaline metal in a range from 0.01 M to 0.05M;
a sprayer configured to form an alkaline metal layer by depositing the alkaline metal solution onto a surface of an absorber;
an annealing chamber configured to anneal the absorber the alkaline metal layer, wherein the annealing chamber is filled with an annealing gas at a starting temperature greater than 200° C. at a pressure between 500-650 torr, wherein the annealing chamber is configured to heat the annealing gas a temperature ramp rate of 7° C.-20° C. per minute to a temperature of 350° C.-450° C., wherein the annealing chamber is configured to generate a boundary between the absorber and the alkaline metal layer having at least a −5% copper depletion range; and
a controller circuit configured to control the sprayer and the annealing chamber, wherein the controller is configured to activate the annealing chamber a predetermined period after the alkaline metal solution is deposited.

11. The system of claim 10 , further comprising a heater configured to dry the absorber after the alkaline metal solution is deposited.

12. The system of claim 11 , wherein the heater is configured to heat the absorber to a temperature between 50° C. and 100° C.

13. The system of claim 10 , wherein the alkaline metal solution comprises one of a potassium-based solution or a sodium-based solution.

14. The system of claim 13 , wherein the alkaline metal solution comprises at least one of NaF, NaCl, NaBr, KF, KCl, or KBr.

Assignees

• Tsmc Solar Ltd
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Shih-Wei

Classifications

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3432

  Tellurides · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title

• Y02E10/541

  CuInSe2 material PV cells · CPC title

• B05C11/10

  Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material {(B05C1/0813, B05C5/0225, B05C17/002 and B05C19/06 take precedence)} · CPC title