Solid-state image sensing device and electronic device

Patent metadata

Field	Value
Publication number	US-10515988-B2
Application number	US-201615551129-A
Country	US
Kind code	B2
Filing date	Feb 12, 2016
Priority date	Feb 27, 2015
Publication date	Dec 24, 2019
Grant date	Dec 24, 2019

Abstract

The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.

First claim

The invention claimed is:

1. A solid-state image sensing device, comprising:
a photoelectric conversion unit comprising a first surface and a second surface, wherein
the first surface is opposite to the second surface, and
the second surface is a light receiving surface of the photoelectric conversion unit;

a charge holding unit configured to hold charges transferred from the photoelectric conversion unit;
a first transfer transistor configured to transfer the charges from the photoelectric conversion unit to the charge holding unit;
a light blocking part comprising a first light blocking part and a second light blocking part, wherein
the first light blocking part is between the second surface of the photoelectric conversion unit and the charge holding unit,
the first light blocking part is with a first opening,
the second light blocking part surrounds a side surface of the photoelectric conversion unit,
the photoelectric conversion unit is on a first semiconductor substrate, the charge holding unit is on a second semiconductor substrate, and the first transfer transistor is on the first semiconductor substrate and the second semiconductor substrate,
the first semiconductor substrate is in direct contact with the second semiconductor substrate at a joining interface of the first semiconductor substrate and the second semiconductor substrate, and
a first distance between the joining interface and a drain terminal of the first transfer transistor is less than a second distance between the joining interface and a source terminal of the first transfer transistor; and

a charge discharging unit configured to discharge the charges accumulated in the photoelectric conversion unit, wherein the charge discharging unit is at a position at which a light with a specific incident angle is incident based on passage of the light through the first opening.

2. The solid-state image sensing device according to claim 1 , wherein
a cross section of the first light blocking part is tapered from a connection part towards the first opening, and
the second light blocking part is connected to the first light blocking part at the connection part.

3. The solid-state image sensing device according to claim 1 , further comprising a third light blocking part that covers at least a part of the charge holding unit, wherein
the third light blocking part is opposite to a device forming surface,
the device forming surface is opposite to the first light blocking part, and
the first transfer transistor is on the device forming surface.

4. The solid-state image sensing device according to claim 1 , wherein
a gate electrode of the first transfer transistor comprises a first electrode part parallel to the first light blocking part and a second electrode part perpendicular to the first light blocking part, and
the second electrode part extends from the first light blocking part towards the photoelectric conversion unit through the first opening.

5. The solid-state image sensing device according to claim 1 , further comprising a fourth light blocking part connected to the first light blocking part at a first position different from a second position, wherein
the second light blocking part is connected to the first light blocking part at the second position that corresponds to a connection part,
a third distance between the fourth light blocking part and the charge holding unit is less than a fourth distance between the fourth light blocking part and the first light blocking part, and
the fourth light blocking part is parallel to the second surface.

6. The solid-state image sensing device according to claim 1 , wherein the joining interface is in a channel of the first transfer transistor.

7. The solid-state image sensing device according to claim 1 , further comprising a fifth light blocking part connected to the first surface of the photoelectric conversion unit and the second light blocking part,
wherein the second light blocking part is connected to the second surface of the photoelectric conversion unit.

8. The solid-state image sensing device according to claim 1 , wherein the photoelectric conversion unit, the charge holding unit, and the first transfer transistor comprise monocrystal silicon.

9. The solid-state image sensing device according to claim 1 , wherein
the photoelectric conversion unit comprises a protruded part, and
the protruded part extends from the first light blocking part towards the charge holding unit through the first opening.

10. The solid-state image sensing device according to claim 9 , wherein
the protruded part is parallel to the second surface, and
the protruded part extends from the first light blocking part towards the charge holding unit.

11. The solid-state image sensing device according to claim 1 , wherein
the charge discharging unit is between a first pixel and a second pixel,
the first pixel is adjacent to the second pixel, and
the charge discharging unit is shared by the first pixel and the second pixel.

12. The solid-state image sensing device according to claim 11 , further comprising:
a second opening at a first position in the second pixel,
wherein the first position in the second pixel corresponds to a second position of the first opening in the first pixel; and

a third opening at a third position in the second pixel, wherein
the third position in the second pixel corresponds to the second position of the first opening in the first pixel,
the first opening is adjacent to the charge discharging unit in the first pixel,
a first size of the first opening is equal to a second size of the second opening, and
the first size of the first opening is equal to a third size of the third opening.

13. The solid-state image sensing device according to claim 1 , further comprising an alignment mark that corresponds to a fourth opening in a sacrifice film that makes the first light blocking part,
wherein the sacrifice film comprises Silicon Germanium (SiGe).

14. The solid-state image sensing device according to claim 1 , wherein a cross section of the first light blocking part is rounded at the first opening.

15. The solid-state image sensing device according to claim 1 , further comprising:
a charge voltage conversion unit; and
a second transfer transistor configured to transfer the charges from the charge holding unit to the charge voltage conversion unit,
wherein the first light blocking part is between the second surface of the photoelectric conversion unit, and the charge holding unit and the charge voltage conversion unit.

16. An electronic device, comprising
a solid-state image sensing device that comprises:
a photoelectric conversion unit comprising a first surface and a second surface, wherein
the first surface is opposite to the second surface, and
the second surface is a light receiving surface of the photoelectric conversion unit;

a charge holding unit configured to hold charges transferred from the photoelectric conversion unit;
a transfer transistor configured to transfer the charges from the photoelectric conversion unit to the charge holding unit;
a light blocking part comprising a first light blocking part and a second light blocking part, wherein
the first light blocking part is between the second surface of the photoelectric conversion unit and the charge holding unit,
the first light blocking part is with an opening,
the second light blocking part surrounds a side surface of the photoelectric conversion unit,
the photoelectric conversion unit is on a first semiconductor substrate, the charge holding

Assignees

• Sony Corp

Inventors

• Tayanaka Hiroshi
• Akiyama Kentaro
• Sakano Yorito
• Oinoue Takashi
• Hagimoto Yoshiya
• Matsumura Yusuke
• Sato Naoyuki
• Miyanami Yuki
• Ueda Yoichi
• Matsumoto Ryosuke

Classifications

• H04N23/741

  by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N25/77

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H04N25/583

  with different integration times · CPC title

• H04N25/59

  by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance · CPC title