Mesoscopic framework for organic-inorganic perovskite based photoelectric conversion device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10515767-B2
Application number	US-201515328504-A
Country	US
Kind code	B2
Filing date	Jul 24, 2015
Priority date	Jul 24, 2014
Publication date	Dec 24, 2019
Grant date	Dec 24, 2019

Abstract

The invention discloses a perovskite solar cell and a method of fabrication thereof. The perovskite solar cell sequentially comprises a transparent electrode, a mesoporous P-I-N framework and a counter electrode from the bottom to top; the mesoporous P-I-N framework is composed of an n-type semiconductor layer, an insulating layer, and a p-type semiconductor layer in a sequentially stacked mode, and the n-type semiconductor layer, the insulating layer and the p-type semiconductor layer all comprise mesopores filled with a perovskite material. The preparation method sequentially includes preparing the mesoporous P-I-N framework on a transparent conductive substrate through a spin-coating method or a screen printing method, filling with the perovskite material and preparing the counter electrode layer.

First claim

The invention claimed is:

1. An organic-inorganic perovskite based solar cell comprising a conductive substrate, an ETL/active layer/HTL component, and a negative electrode, wherein the ETL/active layer/HTL component is disposed between the conductive substrate and the negative electrode, and the ETL/active layer/HTL component comprises:
a mesoporous P-I-N framework containing a mesoporous n-type semiconductor layer, a mesoporous insulating layer, and a mesoporous p-type semiconductor layer; and
an organic-inorganic perovskite light absorbing material;
wherein:
the mesoporous n-type semiconductor layer is disposed on the conductive substrate;
the mesoporous insulating layer is disposed between the mesoporous n-type semiconductor layer and the mesoporous p-type semiconductor layer;
the mesoporous p-type semiconductor layer is in contact with the negative electrode;
the organic-inorganic perovskite light absorbing material is present in mesopores of the mesoporous n-type semiconductor layer;
the organic-inorganic perovskite light absorbing material is present in mesopores of the mesoporous insulating layer; and
the organic-inorganic perovskite light absorbing material is present in mesopores of the mesoporous p-type semiconductor layer.

2. The organic-inorganic perovskite based solar cell of claim 1 , wherein the mesoporous n-type semiconductor being the electron transport layer is made of semiconductor particles selected from the group consisting of Si, TiO 2 , SnO 2 , ZnO, Zn 2 SnO 4 , Nb 2 O 5 , WO 3 , BaTiO 3 , SrTiO 3 , and a mixture thereof.

3. The organic-inorganic perovskite based solar cell of claim 1 , wherein the mesoporous p-type semiconductor as hole transport layer is made of semiconductor particles selected from the group consisting of NiO, CuO, CuSCN, CuI, CuGaO 2 , CuCrO 2 , CuAlO 2 , and a mixture thereof.

4. The organic-inorganic perovskite based solar cell of claim 1 , wherein the mesoporous insulating layer is made of semiconductor particles selected from the group consisting of ZrO 2 , Al 2 O 3 , SiO 2 , SiC, Si 3 N 4 , Ca 3 (PO 4 ) 2 , and a mixture thereof.

5. The organic-inorganic perovskite based solar cell of claim 1 , wherein the conductive substrate is indium tin oxide (ITO) film substrate, fluorine-doped tin oxide (FTO), film substrate, ZnO—Ga 2 O 3 film substrate, ZnO-Al 2 O 3 film substrate, or tin-based oxides film substrate.

6. The organic-inorganic perovskite based solar cell of claim 1 , wherein one additional blocking layer is deposited onto the conductive substrate to form an intervening layer between the conductive substrate and the mesoporous P-I-N framework.

7. The organic-inorganic perovskite based solar cell of claim 1 , wherein the negative electrode is gold (Au), silver (Ag), aluminum (Al), copper (Cu), platinum (Pt), nickel (Ni), or carbon (C).

8. The organic-inorganic perovskite based solar cell of claim 1 , wherein the organic-inorganic perovskite material has a formula of CH 3 NH 3 PbX m Y 3-m , wherein
m is an integer from 1 to 3; and
X and Y are independently selected from the group consisting of iodine (I), bromine (Br), and chlorine (CI).

9. An organic-inorganic perovskite based solar cell comprising a conductive substrate, a mesoporous P-I-N framework, and a negative electrode, wherein the mesoporous P-I-N framework is disposed between the conductive substrate and the negative electrode, and the mesoporous P-I-N framework comprises a mesoporous n-type semiconductor layer, a mesoporous insulating layer, and a mesoporous p-type semiconductor layer and further comprises an organic-inorganic perovskite light absorbing material;
wherein:
the organic-inorganic perovskite light absorbing material is present in mesopores of the mesoporous n-type semiconductor layer;
the organic-inorganic perovskite light absorbing material is present in mesopores of the mesoporous insulating layer;
the organic-inorganic perovskite light absorbing material is present in mesopores of the mesoporous p-type semiconductor layer;
the mesoporous n-type semiconductor layer is disposed on the conductive substrate;
the mesoporous insulating layer is disposed between the mesoporous n-type semiconductor layer and the mesoporous p-type semiconductor layer;
the mesoporous p-type semiconductor layer is in contact with the negative electrode;
the mesoporous n-type semiconductor is made of semiconductor particles selected from the group consisting of Si, TiO 2 , SnO 2 , ZnO, Zn 2 SnO 4 , Nb 2 O 5 , WO 3 , BaTiO 3 , SrTiO 3 , and a mixture thereof;
the mesoporous insulating layer is made of semiconductor particles selected from the group consisting of ZrO 2 , Al 2 O 3 , SiO 2 , SiC, Si 3 N 4 , Ca 3 (PO 4 ) 2 , and a mixture thereof; and
the mesoporous p-type semiconductor is made of semiconductor particles selected from the group consisting of NiO, CuO, CuSCN, Cut CuGaO 2 , CuCrO 2 , CuAlO 2 , and a mixture thereof.

10. The solar cell of claim 9 , wherein the conductive substrate is indium tin oxide (ITO) film substrate, fluorine-doped tin oxide (FTO) film substrate, ZnO—Ga 2 O 3 film substrate, ZnO-Al 2 O 3 film substrate, or tin-based oxides film substrate.

11. The solar cell of claim 9 , wherein one additional blocking layer is deposited onto the conductive substrate to form an intervening layer between the conductive substrate and the mesoporous P-I-N framework.

12. The solar cell of claim 9 , wherein the negative electrode is gold (Au), silver (Ag), aluminum (Al), copper (Cu), platinum (Pt), nickel (Ni), or carbon (C).

13. The solar cell of claim 9 , wherein the organic-inorganic perovskite material has a formula of CH 3 NH 3 PbX m Y 3-m , wherein:
m is an integer from 1 to 3; and
X and Y are independently selected from the group consisting of iodine (I), bromine (Br), and chlorine (CI).

Assignees

• Ecole Polytechnique Fed Lausanne Epfl
• Univ Huazhong Science Tech

Inventors

• Wang Mingkui
• Cao Kun
• Cui Jin
• Zuo Zhixiang
• Shen Yan
• Zakeeruddin Shaik Mohammad
• Graetzel Michael

Classifications

• H01G9/2022

  characterized by he counter electrode · CPC title

• H01G9/209

  Light trapping arrangements · CPC title

• H01G9/0036

  Formation of the solid electrolyte layer · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H01G9/2027

  comprising an oxide semiconductor electrode · CPC title