Conductive structure and manufacturing method therefor

US10512160B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10512160-B2
Application numberUS-201615571465-A
CountryUS
Kind codeB2
Filing dateJun 1, 2016
Priority dateJun 3, 2015
Publication dateDec 17, 2019
Grant dateDec 17, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

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The present specification relates to a conductive structure body and a method for manufacturing the same.

First claim

Opening claim text (preview).

The invention claimed is: 1. A conductive structure body comprising: a substrate; and a conductive line configuring a screen part, a wiring part, and a pad part provided on the substrate, wherein the conductive line includes a first metal layer, a light reflection reducing layer provided on the first metal layer, and a second metal layer provided on the light reflection reducing layer, wherein the light reflection reducing layer includes metal oxynitride, and wherein a thickness of the second metal layer is 6 nm or more and less than 10 nm, wherein the screen part includes a conductive pattern including a plurality of openings and the conductive line partitioning the openings, and wherein a line gap between adjacent conductive lines in the conductive line configuring the screen part is 0.1 μm or more and 100 μm or less; and wherein a thickness of the first metal layer is 10 nm or more and 1 μm or less. 2. The conductive structure body of claim 1 , wherein the metal oxynitride is aluminum oxynitride. 3. The conductive structure body of claim 2 , wherein in the aluminum oxynitride, a value of Equation 1 below satisfies 1 or more and 2 or less: 3 ⁢ Al at ⁢ ⁢ % 2 ⁢ O at ⁢ ⁢ % + 3 ⁢ N at ⁢ ⁢ % [ Equation ⁢ ⁢ 1 ] in Equation 1, N at % means the element content of nitrogen atoms with respect to the aluminum oxynitride, Al at % means the element content of aluminum atoms with respect to the aluminum oxynitride, and O at % means the element content of oxygen atoms with respect to the aluminum oxynitride. 4. The conductive structure body of claim 1 , wherein the second metal layer includes at least one metal of Al, Cu, Co, Ag, Mo, Ti, Ni, Mn, and Cr. 5. The conductive structure body of claim 1 , wherein a light reflectivity of the second metal layer is 40% or less in a wavelength of 550 nm. 6. The conductive structure body of claim 1 , wherein the light reflectivity of the conductive line is 40% or less. 7. The conductive structure body of claim 1 , wherein a specific resistance of the second metal layer is 10 −6 Ωcm or more and 10 −4 Ωcm or less. 8. The conductive structure body of claim 1 , further comprising: a flexible printed circuit board (FPCB) on the conductive line configuring the pad part. 9. The conductive structure body of claim 8 , further comprising: an anisotropic conductive film (ACF) between the conductive line configuring the pad part and the FPCB. 10. The conductive structure body of claim 1 , wherein a line width of the conductive line configuring the screen part is 0.1 μm or more and 100 μm or less. 11. A method for manufacturing a conductive structure body of claim 1 , the method comprising: preparing a substrate; forming a first metal layer on the substrate; forming a light reflection reducing layer on the first metal layer; forming a second metal layer on the light reflection reducing layer; forming a conductive line configuring a screen part, a wiring part, and a pad part by patterning the first metal layer, the light reflection reducing layer, and the second metal layer, wherein a thickness of the second metal layer is 6 nm or more and less than 10 nm, and wherein the screen part includes a conductive pattern including a plurality of openings and the conductive line partitioning the openings, and wherein a line gap between adjacent conductive lines in the conductive line configuring the screen part is 0.1 μm or more and 100 μm or less; and wherein a thickness of the first metal layer is 10 nm or more and 1 μm or less. 12. The method of claim 11 , wherein in the patterning, the first metal layer, the light reflection reducing layer, and the second metal layer are simultaneously patterned. 13. A display device comprising the conductive structure body of claim 1 . 14. A touch panel comprising the conductive structure body of claim 1 .

Assignees

Inventors

Classifications

  • Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads · CPC title

  • using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact · CPC title

  • Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

  • Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper · CPC title

  • Use of materials for the {conductive, e.g. } metallic pattern · CPC title

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Frequently asked questions

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What does patent US10512160B2 cover?
The present specification relates to a conductive structure body and a method for manufacturing the same.
Who is the assignee on this patent?
Lg Chemical Ltd
What technology area does this patent fall under?
Primary CPC classification G06F3/044. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Dec 17 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).