Method for fabricating a nanostructure

Patent metadata

Field	Value
Publication number	US-10511151-B2
Application number	US-201615759986-A
Country	US
Kind code	B2
Filing date	Sep 14, 2016
Priority date	Sep 15, 2015
Publication date	Dec 17, 2019
Grant date	Dec 17, 2019

Abstract

A method for fabricating a nanostructure comprises the steps of growing a first nanowire on a substrate, forming a dielectric layer on the substrate, the dielectric layer surrounding the first nanowire, wherein a thickness of the dielectric layer is smaller than a length of the first nanowire, and removing the first nanowire from the dielectric layer, thereby exposing an aperture in the dielectric layer.

First claim

What is claimed is:

1. A method for fabricating a nanostructure, comprising:
growing a first nanowire on a substrate;
forming a dielectric layer on said substrate, said dielectric layer surrounding said first nanowire, wherein a thickness of said dielectric layer is smaller than a length of said first nanowire; and
removing said first nanowire from said dielectric layer, thereby exposing an aperture in said dielectric layer; and
growing a second nanowire in said aperture on said substrate wherein growing said second nanowire comprises growing a support element in said aperture, and extending said support element above said dielectric layer, and growing a body element around at least a portion of said support element that extends above said dielectric layer.

2. The method according to claim 1 , wherein growing said first nanowire on said substrate comprises:
forming a mask layer on said substrate;
forming an opening in said mask layer, wherein said opening extends to said substrate; and
growing said first nanowire on said substrate in said opening.

3. The method according to claim 2 , wherein said mask layer is formed at a thickness no larger than 80 nm.

4. The method according to claim 1 , wherein said dielectric layer is formed on said substrate at a thickness of at least 100 nm.

5. The method according to claim 1 , wherein a diameter of said body element is at least two times larger than a diameter of said support element.

6. The method according to claim 1 , wherein said nanostructure is adapted to emit a laser signal at a wavelength λ, and a diameter of said support element is smaller than λ/(2n), wherein n denotes an index of refraction of said support element.

7. The method according to claim 1 , wherein said nanostructure is adapted to emit a laser signal at a wavelength λ, and a diameter of said body element is no smaller than λ/n, wherein n denotes an index of refraction of said body element.

8. The method according to claim 1 , wherein growing said first nanowire comprises molecular beam epitaxy or metal organic chemical vapor deposition.

9. The method according to claim 1 , wherein said first nanowire is grown in a direction perpendicular to an upper surface of said substrate.

10. The method according claim 1 , wherein said first nanowire is grown at an angle inclined to a surface normal of said substrate.

11. The method according to claim 4 , wherein said thickness of said dielectric layer is at least 150 nm.

12. The method according to claim 10 , wherein said diameter of said body element is at least three times larger than said diameter of said support element.

13. The method according to claim 10 , wherein said angle is at least 20 degrees.

14. A method for fabricating a nanostructure, comprising:
growing a first nanowire on a substrate;
forming a dielectric layer on said substrate, said dielectric layer surrounding said first nanowire, wherein a thickness of said dielectric layer is smaller than a length of said first nanowire; and
removing said first nanowire from said dielectric layer, thereby exposing an aperture in said dielectric layer;

wherein said nanostructure is adapted to emit a laser signal at a wavelength λ, wherein a thickness of said dielectric layer is an integer multiple of λ/(2n), wherein n denotes an index of refraction of said dielectric layer.

15. The method according to claim 14 , wherein said dielectric layer is formed on said substrate at a thickness of at least 100 nm.

16. The method according to claim 15 , wherein said thickness of said dielectric layer is at least 150 nm.

17. The method according to claim 14 , further comprising a step of growing a second nanowire in said aperture on said substrate;
wherein growing said second nanowire comprises growing a support element in said aperture, and extending said support element above said dielectric layer, and growing a body element around at least a portion of said support element that extends above said dielectric layer.

18. The method according to claim 17 , wherein a diameter of said body element is at least two times larger than a diameter of said support element.

19. The method according to claim 17 , wherein said nanostructure is adapted to emit a laser signal at a wavelength λ, and a diameter of said support element is smaller than λ/(2n), wherein n denotes an index of refraction of said support element.

20. The method according to claim 17 , wherein said nanostructure is adapted to emit a laser signal at a wavelength λ, and a diameter of said body element is no smaller than λ/n, wherein n denotes an index of refraction of said body element.

Assignees

• Univ Muenchen Tech

Inventors

• Koblmueller Gregor
• Mayer Benedikt
• Finley Jonathan
• Abstreiter Gerhard

Classifications

• H10P14/3462 Primary

  Nanowires · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/271

  characterised by the preparation of substrate for selective deposition · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title