Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields

Patent metadata

Field	Value
Publication number	US-10510474-B2
Application number	US-201615572017-A
Country	US
Kind code	B2
Filing date	Apr 18, 2016
Priority date	May 8, 2015
Publication date	Dec 17, 2019
Grant date	Dec 17, 2019

Abstract

A base element for switching a magnetization state of a nanomagnet includes a heavy-metal strip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable in an absence of an external magnetic field by a flow of electrical charge through the heavy-metal strip. A method for switching a magnetization state of a nanomagnet is also described.

First claim

What is claimed is:

1. A base element for switching a magnetization state of a nanomagnet comprising:
a heavy-metal strip having a surface;
a ferromagnetic nanomagnet disposed adjacent to said surface, said ferromagnetic nanomagnet comprising a shape having a long axis and a short axis, said ferromagnetic nanomagnet having both a perpendicular-to-the-plane anisotropy H kz and an in-plane anisotropy H kx and said ferromagnetic nanomagnet having a first magnetization equilibrium state and a second magnetization equilibrium state, said first magnetization equilibrium state or said second magnetization equilibrium state settable in an absence of an external magnetic field by a flow of electrical charge through said heavy-metal strip; and
wherein a direction of flow of said electrical charge through said heavy-metal strip comprises an angle ξ with respect to said short axis of said nanomagnet.

2. The base element of claim 1 , wherein said flow of electrical charge in a first direction through said heavy-metal strip causes said first magnetization equilibrium state and said flow of electrical charge in a second direction through said heavy-metal strip causes said second magnetization equilibrium state.

3. The base element of claim 1 , wherein said nanomagnet comprises an elliptical shape having a long axis and a short axis.

4. The base element of claim 3 , wherein said long axis is about parallel to said surface of said heavy-metal strip.

5. The base element of claim 1 , wherein said angle ξ determines an energy of switching.

6. The base element of claim 1 , wherein said angle ξ determines a speed of switching.

7. The base element of claim 1 , wherein said base element provides a bit of an integrated memory device.

8. The base element of claim 1 , wherein said base element provides a bit of an integrated logic device.

9. The base element of claim 1 , wherein said base element provides a bit of an integrated pipelined microprocessor device.

10. The base element of claim 1 , wherein said heavy-metal strip comprises tungsten or tantalum.

11. The base element of claim 1 , wherein said heavy-metal strip comprises Aluminum (Al) or Gold (Au).

12. The base element of claim 1 , wherein said heavy-metal strip comprises Bismuth (Bi) or Molybdenum (Mo).

13. The base element of claim 1 , wherein said heavy-metal strip comprises Niobium (Nb) or Palladium (Pd).

14. The base element of claim 1 , wherein said heavy-metal strip comprises Platinum (Pt).

15. The base element of claim 1 , wherein said heavy-metal strip comprises an alloy of copper (Cu) and Bi, or an alloy of Cu and iridium (Ir).

16. A method for switching a magnetization state of a nanomagnet comprising the steps of:
providing a heavy-metal strip having a surface and a ferromagnetic nanomagnet disposed adjacent to said surface, said ferromagnetic nanomagnet comprising a shape having a long axis and a short axis, said ferromagnetic nanomagnet having both a perpendicular-to-the-plane anisotropy H kz and an in-plane anisotropy H kx , and said ferromagnetic nanomagnet having a first magnetization equilibrium state and a second magnetization equilibrium state, and wherein a direction of flow of said electrical charge through said heavy-metal strip comprises an angle ξ with respect to said short axis of said nanomagnet; and
flowing an electrical charge through said heavy-metal strip in an electrical charge direction to set said magnetization state of said nanomagnet in an absence of an external magnetic field to said first magnetization equilibrium state, or to set said magnetization state to said second magnetization equilibrium state.

17. The method of claim 16 , wherein said step of flowing an electrical charge comprises flowing an electrical charge through said heavy-metal strip in an electrical charge direction to set said magnetization state within a time period of less than about 50 picoseconds.

18. The method of claim 16 , wherein said step of flowing an electrical charge comprises flowing an electrical charge through said heavy-metal strip in an electrical charge direction to set said magnetization state where said magnetization state corresponds to setting a bit of a memory device.

19. The method of claim 16 , wherein said step of flowing an electrical charge comprises flowing an electrical charge through said heavy-metal strip in an electrical charge direction to set said magnetization state where said magnetization state corresponds to setting a bit of a logic device.

20. A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field comprising:
injecting a charge current J e through a heavy-metal nonmagnetic nanostrip disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet;
turning said charge current J e off after t e seconds, causing a spin torque to reduce to substantially zero where M is close to an x-y plane and away from an e z axis by an angle of ϑ in a critical zone, where an effective field experienced by the magnetization of the ferromagnetic layer H eff is significantly dominated by and in-plane anisotropy H kx , and where M passes a hard axis by precessing around said H eff ; and
passing the hard axis, where H eff is dominated by a perpendicular-to-the-plane anisotropy H kz , and where M is pulled towards the new equilibrium state by precessing and damping around H eff , completing a magnetization switching.

21. The method of claim 20 , wherein said step of turning said charge current J e off after t e seconds comprises turning said charge current J e off after time period of less than about 50 picoseconds.

Assignees

• Kazemi Mohammad
• Ipek Engin
• Friedman Eby G
• Univ Rochester

Inventors

• Kazemi Mohammad
• Ipek Engin
• Friedman Eby G

Classifications

• H01F10/3286 Primary

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/18

  using Hall-effect devices · CPC title

• H01F10/329

  Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title