High-speed optical transmitter with a silicon substrate

US10509163B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10509163-B2
Application numberUS-201715426823-A
CountryUS
Kind codeB2
Filing dateFeb 7, 2017
Priority dateFeb 8, 2016
Publication dateDec 17, 2019
Grant dateDec 17, 2019

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Abstract

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A 400 Gb/s transmitter is integrated on a silicon substrate. The transmitter uses four gain chips, sixteen lasers, four modulators to modulate the sixteen lasers at 25 Gb/s, and four multiplexers to produce four optical outputs. Each optical output can transmit at 100 Gb/s to produce a 400 Gb/s transmitter. Other variations are also described.

First claim

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What is claimed is: 1. An optical transmitter using semiconductor lasers and wavelength-division multiplexing (WDM), the optical transmitter comprising: a substrate, wherein the substrate is silicon; four gain chips integrated on the substrate; a plurality of reflectors integrated on the substrate, wherein: the four gain chips and the plurality of reflectors form a plurality of lasers integrated on the substrate; there are four lasers per gain chip; the plurality of lasers are configured to transmit on predetermined optical channels of a WDM protocol; and each laser per gain chip operates on the same predetermined optical channel of the WDM protocol; four modulator chips integrated on the substrate, wherein the four modulator chips modulate light generated by the plurality of lasers; sixteen waveguides integrated on the substrate configured to guide light from the four modulator chips to four multiplexers, wherein each of the four modulator chips is optically coupled with four waveguides of the sixteen waveguides; the four multiplexers, wherein: the four multiplexers are integrated on the substrate; and each of the four multiplexers is configured to receive light from four waveguides of the sixteen waveguides and combine the light from the four waveguides into an optical output; and four optical outputs, wherein: the four optical outputs are integrated on the substrate; there is one optical output for each of the four multiplexers; and each of the four optical outputs is configured to transmit light of four different frequencies to an optical fiber. 2. The optical transmitter of claim 1 , wherein each gain chip, of the four gain chips, has a different bandgap. 3. The optical transmitter of claim 1 , wherein the four gain chips comprise III-V material. 4. The optical transmitter of claim 1 , wherein: the substrate is part of a silicon-on-insulator (SOI) wafer; the SOI wafer comprises a device layer of crystalline silicon; and the sixteen waveguides are formed in the device layer. 5. The optical transmitter of claim 1 , wherein the modulator chips modulate each of the plurality of lasers to produce a plurality of optical beams each optical beam of the plurality of optical beams modulated at 25 Gb/s plus or minus 20%. 6. An optical transmitter using semiconductor lasers and wavelength-division multiplexing (WDM), the optical transmitter comprising: a substrate, wherein the substrate is silicon; four gain chips integrated on the substrate, wherein there is one laser per gain chip; a plurality of reflectors integrated on the substrate, wherein: the four gain chips and the plurality of reflectors form a plurality of lasers integrated on the substrate; and the plurality of lasers are configured to transmit on predetermined optical channels of a WDM protocol; four modulator chips integrated on the substrate, wherein the four modulator chips modulate light generated by the plurality of lasers and each modulator chip has four ridges to produce four modulated signals; sixteen waveguides integrated on the substrate configured to guide light from the four modulator chips to four multiplexers; the four multiplexers, wherein: the four multiplexers are integrated on the substrate; and each of the four multiplexers is configured to receive light from four waveguides of the sixteen waveguides and combine the light from the four waveguides into an optical output; and four optical outputs, wherein: the four optical outputs are integrated on the substrate; there is one optical output for each of the four multiplexers; and each of the four optical outputs is configured to transmit light of four different frequencies to an optical fiber.

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What does patent US10509163B2 cover?
A 400 Gb/s transmitter is integrated on a silicon substrate. The transmitter uses four gain chips, sixteen lasers, four modulators to modulate the sixteen lasers at 25 Gb/s, and four multiplexers to produce four optical outputs. Each optical output can transmit at 100 Gb/s to produce a 400 Gb/s transmitter. Other variations are also described.
Who is the assignee on this patent?
Skorpios Tech Inc
What technology area does this patent fall under?
Primary CPC classification G02B6/12002. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Dec 17 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).