Method for producing a laser diode bar and laser diode bar

Patent metadata

Field	Value
Publication number	US-10505337-B2
Application number	US-201816156134-A
Country	US
Kind code	B2
Filing date	Oct 10, 2018
Priority date	Oct 12, 2017
Publication date	Dec 10, 2019
Grant date	Dec 10, 2019

Abstract

A diode bar and a method for producing a laser diode bar are disclosed. In an embodiment a laser diode bar includes a plurality of emitters arranged side by side, the each emitter having a semiconductor layer sequence with an active layer suitable for generating laser radiation, a p-contact and an n-contact, wherein the emitters comprise a group of electrically contacted first emitters and a group of non-electrically contacted second emitters, wherein the p-contacts of the first emitters are electrically contacted by a p-connecting layer, and wherein the p-contacts of the second emitters are separated from the p-connecting layer by an electrically insulating layer and are not electrically contacted.

First claim

What is claimed is:

1. A method for forming a laser diode bar, the method comprising:
arranging a plurality of emitters side by side, each emitter having a semiconductor layer sequence with an active layer suitable for generating laser radiation, a p-contact and an n-contact;
testing at least one optical and/or electrical property of the emitters;
assigning emitters for which the optical and/or electrical property lies within a predetermined setpoint range to a group of first emitters;
assigning emitters for which the at least one optical and/or electrical property lies outside the predetermined setpoint range to a group of second emitters;
applying an electrically insulating layer to at least the p-contacts of the second emitters; and
electrically contacting the p-contacts of the first emitters by applying a p-connecting layer to the p-contacts of the first emitters,
wherein the electrically insulating layer is selectively applied so that the p-contacts of the second emitters are electrically insulated from the p-connecting layer while the p-contacts of the first emitters are electrically contacted.

2. The method according to claim 1 , wherein the p-connecting layer is a solder layer, and wherein the laser diode bar is connected to a carrier by the solder layer at a first main surface on which the p-contacts of the plurality of emitters is arranged.

3. The method according to claim 1 , wherein the electrically insulating layer comprises a lacquer or an ink and is selectively applied to the p-contacts of the second emitters.

4. The method according to claim 1 , wherein the electrically insulating layer comprises a photoresist layer which is applied to the p-contacts of the first and second emitters, wherein the photoresist layer is exposed on the p-contacts of the first emitters and subsequently removed, and wherein the photoresist layer is not exposed and is not removed on the p-contacts of the second emitters.

5. The method according to claim 1 , wherein the electrically insulating layer comprises an oxide layer which is applied to the p-contacts of the first and second emitters and, and wherein the oxide layer is removed from the p-contacts of the first emitters.

6. The method according to claim 5 , wherein the p-contacts of the first and second emitters comprise gold and are treated with an oxygen plasma to produce a gold oxide layer on a surface of the p-contacts before the electrically insulating layer is applied, and wherein the gold oxide layer after application of the electrically insulating layer is at least partially decomposed by heat produced during operation of the first emitters so that the electrically insulating layer adheres to the p-contacts of the first emitters less than to the p-contacts of the second emitters, and wherein the electrically insulating layer is at least partially detached from the p-contacts of the first emitters.

7. The method according to claim 1 , wherein the semiconductor layer sequence comprises a nitride compound semiconductor material.

8. A laser diode bar comprising:
a plurality of emitters arranged side by side, each emitter having a semiconductor layer sequence with an active layer configured to generate laser radiation, a p-contact and an n-contact,
wherein the emitters comprise a group of electrically contacted first emitters and a group of non-electrically contacted second emitters, and
wherein the p-contacts of the first emitters are electrically contacted by a p-connecting layer while the p-contacts of the second emitters are separated by an electrically insulating layer from the p-connecting layer, the p-contacts of the second emitters being not electrically contacted.

9. The laser diode bar according to claim 8 , wherein the p-connecting layer is a solder layer, and wherein the laser diode bar is connected to a support by the solder layer on a first main surface on which the p-contacts of the plurality of emitters is arranged.

10. The laser diode bar according to claim 8 , wherein the electrically insulating layer comprises a lacquer or an ink.

11. The laser diode bar according to claim 8 , wherein the electrically insulating layer is a photoresist layer.

12. The laser diode bar according to claim 8 , wherein the electrically insulating layer is an oxide layer.

13. The laser diode bar according to claim 12 , wherein the electrically insulating layer is a silicon oxide layer.

14. The laser diode bar according to claim 12 , wherein a gold oxide layer is arranged between p-contacts of the second emitters and the electrically insulating layer.

15. The laser diode bar according to claim 8 , wherein the semiconductor layer sequence comprises a nitride compound semiconductor material.

16. A laser diode bar comprising:
a plurality of emitters arranged side by side, each emitter having a semiconductor layer sequence with an active layer suitable for generating laser radiation, a p-contact and an re-contact,
wherein the emitters comprise a group of electrically contacted first emitters and a group of non-electrically contacted second emitters,
wherein the p-contacts of the first emitters are electrically contacted by a p-connecting layer,
wherein the p-contacts of the second emitters are separated from the p-connecting layer by an electrically insulating layer and are not electrically contacted,
wherein the electrically insulating layer is an oxide layer, and
wherein a gold oxide layer is arranged between p-contacts of the second emitters and the electrically insulating layer.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Gerhard Sven
• Löffler Andreas

Classifications

• H01S5/0042 Primary

  On wafer testing, e.g. lasers are tested before separating wafer into chips · CPC title

• H01S5/0014 Primary

  Measuring characteristics or properties thereof (measuring techniques per se G01J, G01K, G01N, G01R) · CPC title

• H01S5/4031

  Edge-emitting structures · CPC title

• H01S5/22

  having a ridge or stripe structure · CPC title

• H01S5/04256

  characterised by the configuration · CPC title