Multifunctional optoelectronic devices based on perovskites

Patent metadata

Field	Value
Publication number	US-10504659-B2
Application number	US-201716086530-A
Country	US
Kind code	B2
Filing date	Mar 16, 2017
Priority date	Apr 13, 2016
Publication date	Dec 10, 2019
Grant date	Dec 10, 2019

Abstract

Embodiments of the present disclosure provide methods of growing halide films (e.g., single crystal halide perovskites or multi-crystal halide perovskites) on a structure, dual-mode photodetectors, methods of use, and the like.

First claim

We claim at least the following:

1. A device, comprising:
a dual-band photodetector having a microcrystalline film deposited on a substrate,
wherein the microcrystalline film is positioned on a top side of the dual-band photodetector and the substrate is positioned on a bottom side of the dual-band photodetector,
wherein the microcrystalline film is a halide perovskite,
wherein the dual-band photodetector is configured to operate as a narrow-band photodetector upon illumination from the top side and the dual-band photodetector is configured to operate as a wide-band photodetector upon illumination from the bottom side.

2. The device of claim 1 , wherein
the halide perovskite is AMX 3 ,
A is an inorganic or organic monovalent cation,
M is a divalent cation selected from the group consisting of: Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, Cs, or Eu, and
X is selected from a halide.

3. The device of claim 1 , wherein
the halide perovskite is selected from the group consisting of: MAPbI 3 , MAPbBr 3 , MAPbBr 2 Cl, MAPbCl 3 , FAPbI 3 , FAPbBr 3 , FAPbCl 3 , CsPbI 3 , CsPbBr 3 , CsPbCl 3 , MASnI 3 , MASnBr 3 , MASnCl 3 , FASnI 3 , FASnBr 3 , FASnCl 3 , CsSnI 3 , CsSnBr 3 , and CsSnCl 3 ,
MA is methylammonium, and
FA is formamidinum.

4. The device of claim 1 , wherein the substrate is conductive substrate.

5. The device of claim 4 , wherein the conductive substrate is selected from indium tin oxide (ITO), fluorinated tin oxide (FTO), or gold.

6. The device of claim 2 , wherein the dual-band photodetector is configurable to be tunable by adjusting the perovskite composition AMX3, the halide (X) composition, the A composition, the M composition, or a combination thereof.

7. The device of claim 1 , wherein the microcrystalline film has a thickness of 10 to 500 microns and the substrate has a thickness of 1 nm to 1000 nm.

8. The device of claim 1 , wherein the top side of the dual-band photodetector is configured to detect light in the red, green, blue, and near-infrared portion of the infrared spectrum.

9. The device of claim 1 , wherein the bottom side of the dual-band photodetector is configured to detect light in the visible, UV-light, and X-ray, regions of the light spectrum.

10. A method of making a photodetector, comprising:
providing precursor materials for a microcrystalline film; and
depositing a microcrystalline film on a substrate to form a dual-band photodetector,
wherein the microcrystalline film is positioned on a top side of the dual-band photodetector and the substrate is positioned on a bottom side of the dual-band photodetector,
wherein the microcrystalline film is a halide perovskite,
wherein the dual-band photodetector is configured to operate as a narrow-band photodetector upon illumination from the top side and the dual-band photodetector is configured to operate as a wide-band photodetector upon illumination from the bottom side.

11. The method of claim 10 , wherein
the halide perovskite is AMX3,
A is an inorganic or organic monovalent cation,
M is a divalent cation selected from the group consisting of: Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, Cs, or Eu, and
X is selected from a halide.

12. The method of claim 10 , wherein
the halide perovskite is selected from the group consisting of: MAPbI 3 , MAPbBr 3 , MAPbBr 2 Cl, MAPbCl 3 , FAPbI 3 , FAPbBr 3 , FAPbCl 3 , CsPbI 3 , CsPbBr 3 , CsPbCl 3 , MASnI 3 , MASnBr 3 , MASnCl 3 , FASnI 3 , FASnBr 3 , FASnCl 3 , CsSnI 3 , CsSnBr 3 and CsSnCl 3 ,
MA is methylammonium, and
FA is formamidinum.

13. The method of claim 10 , wherein the substrate is conductive substrate.

14. The method of claim 10 , wherein the conductive substrate is selected from indium tin oxide (ITO), fluorinated tin oxide (FTO), or gold.

Assignees

• Univ King Abdullah Sci & Tech

Inventors

• Saidaminov Makhsud I
• Bakr Osman M

Classifications

• Y02E10/549

  Organic PV cells · CPC title

• H01L51/4206

  Electricity · mapped topic

• H01L51/0002

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01G9/2009 Primary

  Solid electrolytes · CPC title