Method of producing a triboelectric generator with rough dielectric polymer

US10498259B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10498259-B2
Application numberUS-201514803429-A
CountryUS
Kind codeB2
Filing dateJul 20, 2015
Priority dateJul 24, 2014
Publication dateDec 3, 2019
Grant dateDec 3, 2019

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  1. Title

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  2. Abstract

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  5. First independent claim

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  7. Citations and related patents

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Abstract

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Production of a triboelectric generator element based on a given dielectric polymer material, provided with a rough surface comprising conical micro-tip shaped structures obtained by means of a heat treatment of the polymer material (FIG. 1 C).

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of producing a triboelectric generator first element, the method comprising: a) depositing a conducting layer on a support, b) forming on the conducting layer a dielectric polymer material layer with an exposed surface, and c) roughening the exposed surface of the dielectric polymer material layer by carrying out a crystallisation annealing so as to crystallise the dielectric polymer material and to form micro-tip shaped structures on the exposed surface of the dielectric polymer material layer, thereby obtaining the first element with a roughened exposed surface, wherein the conducting layer is a metal layer, an indium tin oxide layer, or a layer of nano-wires. 2. The method according to claim 1 , wherein the dielectric polymer material includes a terpolymer or a copolymer of a polyvinylidene fluoride. 3. The method according to claim 1 , wherein the dielectric polymer material is hydrophobic. 4. The method according to claim 2 , wherein the dielectric polymer material is a terpolymer of P(VDF-TrFe-CFE) and/or P(VDF-TrFe-CTFE) or a copolymer of P(VDF-TrFe). 5. The method according to claim 1 , wherein during b), the dielectric polymer material is mixed with an additive such that the crystallisation of the dielectric polymer material in c) causes mechanical stresses exerted on both the dielectric polymer material and the additive and forms the micro-tip shaped structures on the exposed surface of the dielectric polymer material layer. 6. The method according to claim 5 , wherein the additive is a UV radiation absorbing compound. 7. The method according to claim 1 , wherein the crystallisation annealing comprises a photonic annealing by exposing the dielectric polymer material layer to at least one UV radiation light pulse. 8. The method according to claim 1 , wherein the support is a support of a flexible polymer material. 9. A method of manufacturing a triboelectric effect generator including a first element and a second element, the method comprising: forming the first element by the method according to claim 1 , and forming the second element by forming a graphene layer on a second support of a material having triboelectric properties different from the dielectric polymer material so as to create electrical charges between the first element and the second element by contacting the roughened surface of the first element with the graphene layer of the second element. 10. A method of manufacturing a triboelectric effect generator including a first element and a second element, the method comprising: forming the first element by the method according to claim 1 , and forming the second element comprising a second support of a dielectric material having triboelectric properties different from the dielectric polymer material so as to create electrical charges between the first element and the second element by contacting the roughened surface of the first element with the dielectric material of the second element. 11. The method according to claim 1 , wherein the crystallisation annealing comprises at least one thermal annealing. 12. The method according to claim 11 , wherein the crystallisation annealing comprises a first annealing at a temperature of 90 to 100° C. for 5 to 30 minutes, followed by a second annealing at a temperature of 110 to 130° C. for 5 to 30 minutes. 13. The method according to claim 5 , wherein the crystallisation annealing comprises a photonic annealing by exposing the dielectric polymer material layer to at least one UV radiation light pulse, and the additive is a UV radiation absorbing compound. 14. The method according to claim 13 , wherein the UV radiation absorbing compound is pyrene. 15. The method according to claim 6 , wherein the UV radiation absorbing compound is pyrene. 16. A method of manufacturing a triboelectric effect generator including a first element and a second element, the method comprising: i) producing the first element by a) depositing a conducting layer on a support, b) forming on the conducting layer a dielectric polymer material layer with an exposed surface, and c) roughening the exposed surface of the dielectric polymer material layer by carrying out a crystallisation annealing so as to crystallise the dielectric polymer material and to form micro-tip shaped structures on the exposed surface of the dielectric polymer material layer, thereby obtaining the first element with a roughened exposed surface; ii) producing the second element comprising a second support of a dielectric material having triboelectric properties different from the dielectric polymer material; and iii) contacting the roughened surface of the first element with the dielectric material of the second element so as to create electrical charges between the first element and the second element. 17. The method according to claim 16 , wherein the dielectric material is a polymer material.

Assignees

Inventors

Classifications

  • H02N1/04Primary

    Friction generators · CPC title

  • After-treatment · CPC title

  • to obtain a matt or rough surface · CPC title

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Frequently asked questions

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What does patent US10498259B2 cover?
Production of a triboelectric generator element based on a given dielectric polymer material, provided with a rough surface comprising conical micro-tip shaped structures obtained by means of a heat treatment of the polymer material (FIG. 1 C).
Who is the assignee on this patent?
Commissariat Energie Atomique
What technology area does this patent fall under?
Primary CPC classification H02N1/04. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 03 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).