Nanoscale LED electrode assembly having improved electrical contact and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10497680-B2
Application number	US-201715855767-A
Country	US
Kind code	B2
Filing date	Dec 27, 2017
Priority date	Dec 28, 2016
Publication date	Dec 3, 2019
Grant date	Dec 3, 2019

Abstract

Provided are a method of manufacturing a nanoscale light-emitting diode (LED) electrode assembly having improved electrical contacts, and more particularly, a nanoscale LED electrode assembly having improved electrical contacts and capable of increasing conductivity between electrodes and nanoscale LED devices and decreasing contact resistance, and a method of manufacturing the same.

First claim

What is claimed is:

1. A method of manufacturing a light-emitting diode (LED) electrode assembly, the method comprising:
forming a first electrode and a second electrode to be spaced apart from each other on a base substrate;
forming a LED device on the first electrode and the second electrode;
forming a liftoff layer on the LED device, the first electrode and the second electrode, and forming a photoresist layer on the liftoff layer;
developing the photoresist layer to expose upper surfaces of the first electrode and the second electrode; and
forming a contact layer which is connecting the LED device to the first electrode and the second electrode by depositing a conductive material on the LED electrode assembly,
wherein the developing the photoresist layer comprises developing the liftoff layer and the photoresist layer to expose the upper surfaces of the first electrode and the second electrode such that side surfaces of the liftoff layer remaining after the developing of the liftoff layer and the photoresist layer are dented and thus a step is formed between the photoresist layer and the liftoff layer.

2. The method of claim 1 , between the forming the LED device and the forming the liftoff layer, further comprising thermally processing the LED device at 200° C. to 1000° C. for 1 to 5 minutes.

3. The method of claim 1 , wherein a ratio between widths of the photoresist layer and the liftoff layer which remain after the developing of the liftoff layer and the photoresist layer is in a range of 1:0.2 to 1:0.8.

4. The method of claim 1 , wherein, after the developing the photoresist layer and the forming the contact layer, comprises forming the contact layer to bury a portion of the dented side surfaces of the liftoff layer.

5. The method of claim 1 , wherein the developing the photoresist layer comprises developing the photoresist layer to additionally expose upper portions of opposite end parts of the LED device.

6. The method of claim 1 , wherein the forming the contact layer comprises:
forming the contact layer on an upper surface of the photoresist layer; and lifting off the photoresist layer.

7. A method of manufacturing a light-emitting diode (LED) electrode assembly, the method comprising:
forming a first electrode and a second electrode to be spaced apart from each other on a base substrate;
forming a LED device on the first electrode and the second electrode;
forming a conductive layer on the LED device and the first electrode and the second electrode;
forming a photoresist layer on the conductive layer;
developing the photoresist layer to expose an upper surface of the conductive layer by removing at least a region of a part of the photoresist layer corresponding to a space between the first electrode and the second electrode; and
forming a contact layer which is covering the upper surface of the first electrode and the second electrode by etching the conductive layer corresponding to the removed region of the photoresist layer and connecting the LED device to the first electrode and the second electrode,
wherein the contact layer has a protrusion protruding toward the first electrode and the second electrode formed to be spaced apart from each other.

8. The method of claim 7 , wherein the LED device comprises an insulating film provided on an outer surface of the LED device, excluding opposite end parts thereof.

9. The method of claim 7 , between the forming the LED device and the forming the conductive layer, further comprising thermally processing the LED device at 200° C. to 1000° C. for 1 to 5 minutes.

10. The method of claim 7 , wherein the forming the contact layer comprises:
forming the contact layer by etching the conductive layer to remove only a portion of the conductive layer corresponding to the removed region of the photoresist layer; and
removing the photoresist layer on the etched LED device, the first electrode, and the second electrode.

11. The method of claim 10 , wherein the forming the contact layer is performed by dry etching.

12. A light-emitting diode (LED) electrode assembly comprising:
a base substrate;
an electrode line including a first electrode and a second electrode formed to be spaced apart from each other and in parallel with the base substrate;
a plurality of LED devices which are aligned between the first electrode and the second electrode; and
a contact layer including a region corresponding to interfaces between the first and second electrodes and the LED devices, connecting the LED devices to the first electrode and the second electrode,
wherein the contact layer is formed to cover upper surfaces of the first and second electrodes, a first portion of the contact layer covering the upper surface of the first electrode being spaced from a second portion of the contact layer covering the upper surface of the second electrode, wherein the contact layer has a protrusion protruding toward the first electrode and the second electrode formed to be spaced apart from each other.

13. The LED electrode assembly of claim 12 , wherein the contact layer has a thickness of 80 to 400 nm with respect to upper surfaces of the first and second electrodes.

14. The LED electrode assembly of claim 12 , wherein each of the LED devices comprises an insulating film provided on an outer surface of the LED device excluding opposite end parts thereof.

15. The LED electrode assembly of claim 12 , wherein the plurality of LED devices comprise a first electrode layer and a second electrode layer provided on opposite end parts of the respective LED devices.

16. The LED electrode assembly of claim 14 , wherein residual metal of the contact layer remains on the outer surfaces of the LED devices excluding the region corresponding to the interfaces between the first and second electrodes and the LED devices.

17. A lighting fixture comprising the light-emitting diode (LED) electrode assembly of claim 12 .

18. A display device comprising the light-emitting diode (LED) electrode assembly of claim 12 .

Assignees

• Samsung Display Co Ltd

Inventors

• Sung Yeon Goog
• Do Young Rag

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H01L25/0753 Primary

  Electricity · mapped topic

• H01L33/20

  Electricity · mapped topic

• H01L2933/0066

  Electricity · mapped topic