Method for dehydrating semiconductor structure and dehydrating method of the same

Patent metadata

Field	Value
Publication number	US-10497559-B2
Application number	US-201815938360-A
Country	US
Kind code	B2
Filing date	Mar 28, 2018
Priority date	Mar 28, 2018
Publication date	Dec 3, 2019
Grant date	Dec 3, 2019

Abstract

The present disclosure provides a method for dehydrating a semiconductor structure, including providing a semiconductive substrate, forming a trench on the semiconductive substrate, dispensing an agent in liquid form into the trench, solidifying the agent, and dehydrating a surface in the trench by transforming the agent from solid form to vapor form.

First claim

What is claimed is:

1. A method for dehydrating a semiconductor structure, comprising:
providing a semiconductive substrate;
forming a trench on the semiconductive substrate;
dispensing diluted fluoride into the trench;
dispensing deionized water into the trench subsequent to dispensing diluted fluoride;
dispensing isopropanol into the trench subsequent to dispensing deionized water;
dispensing an agent in liquid form into the trench subsequent to dispensing isopropanol;
solidifying the agent; and
dehydrating a surface in the trench by transforming the agent from solid form to vapor form.

2. The method of claim 1 , wherein solidifying the agent includes cooling the substrate.

3. The method of claim 1 , wherein solidifying the agent is through lowering a temperature of the agent to at least 5 degrees below a melting point of the agent.

4. The method of claim 2 , wherein cooling the substrate is performed by purging a coolant on a surface of the semiconductive substrate.

5. The method of claim 4 , wherein the surface is at an opposite side to the trench.

6. The method of claim 1 , further comprising spinning the substrate after solidifying the agent.

7. The method of claim 1 , wherein a melting point of the agent is ranging from 0° C. to 25° C. under pressure 1 atm.

8. The method of claim 1 , wherein a saturated vapor pressure of the agent under pressure 1 atm and 5 degrees below the melting point is at least 1 kPa.

9. A method for dehydrating a semiconductor structure, comprising:
forming a semiconductive transistor, comprising:
providing a semiconductive substrate;
forming a plurality of semiconductive fins over the semiconductive substrate;
flowing an agent in spaces between the plurality of fins;
dispensing diluted fluoride into the trench;
dispensing deionized water into the trench subsequent to dispensing diluted fluoride;
dispensing isopropanol into the trench subsequent to dispensing deionized water;
solidifying the agent in the spaces; and
transforming the solidified agent into vapor.

10. The method of claim 9 , wherein a aspect ratio of the plurality of semiconductive fins is greater than 11.

11. The method of claim 9 , wherein a Young's modulus of the plurality of semiconductive fins is lower than 200 GPa.

12. The method of claim 9 , wherein a melting point of the agent is ranging from 0° C. to 25° C. under 1 atm.

13. The method of claim 12 , wherein solidifying the agent is through lowering a temperature of the agent to at least 5 degrees below the melting point of the agent.

14. The method of claim 13 , wherein solidifying the agent includes cooling the semiconductive substrate by purging a coolant on a surface of the semiconductive substrate.

15. A method for dehydrating a semiconductor structure, comprising:
providing a semiconductive substrate;
forming a trench array on the semiconductive substrate;
dispensing an agent in liquid form into the trench array;
dispensing diluted fluoride into the trench;
dispensing deionized water into the trench subsequent to dispensing diluted fluoride;
dispensing isopropanol into the trench subsequent to dispensing deionized water;
solidify the agent;
vaporizing the agent from solid form to vapor form inside a chamber; and
providing superheated hydrogen oxide steam in the chamber.

16. The method of claim 15 , wherein solidifying the agent is through lowering a temperature of the agent to at least 5 degrees below a melting point of the agent.

17. The method of claim 15 , wherein the saturated vapor pressure of the agent under 1 atm and 5 degrees below the melting point is at least 1 kPa.

18. The method of claim 15 , wherein vaporizing the agent includes lowering a partial vapor pressure of the agent in vapor form inside the chamber.

19. The method of claim 18 , wherein the agent in vapor form is exhausted from the chamber.

20. The method of claim 18 , wherein lowering the partial vapor pressure of the agent includes purging an inert gas into the chamber.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lee Chung-Chieh

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• F26B11/22

  on or in stationary dishes, trays, pans, or other mainly-open receptacles, with moving stirring devices · CPC title

• F26B11/08

  rotating about a vertical or steeply-inclined axis · CPC title