Method and apparatus for calibrating a thermometer in situ

Patent metadata

Field	Value
Publication number	US-10495526-B2
Application number	US-201514744555-A
Country	US
Kind code	B2
Filing date	Jun 19, 2015
Priority date	Aug 31, 2010
Publication date	Dec 3, 2019
Grant date	Dec 3, 2019

Abstract

The invention relates to an apparatus for the calibration of a thermometer in situ, wherein the apparatus has a temperature sensor (S) for determining a temperature (T); wherein a reference element (K) is provided for calibrating the temperature sensor (S); wherein the reference element (K) at least partially comprises a ferroelectric material (D), which experiences a phase transformation at at least one predetermined temperature (T Ph ) in a temperature range relevant for calibrating the temperature sensor (S).

First claim

The invention claimed is:

1. An apparatus for calibrating or validating a thermometer in situ, having:
a temperature sensor for determining a temperature; and
a reference element for calibrating said temperature sensor, wherein:
said reference element at least partially comprises a ferroelectric material, which experiences a phase transformation at at least one predetermined temperature in a temperature range relevant for calibrating or validating said temperature sensor,
said temperature sensor and said reference element are integrated in a thermometer component and wherein said reference element is arranged next to said temperature sensor and is sufficiently close to the same temperature as the temperature sensor, and
said ferroelectric material serves as a substrate for said temperature sensor, wherein said temperature sensor is located on said substrate.

2. The apparatus as claimed in claim 1 , wherein:
said ferroelectric material is a solid body.

3. The apparatus as claimed in claim 1 , wherein:
said ferroelectric material has a crystal structure; and
the crystal structure of said ferroelectric material changes in the phase transformation.

4. The apparatus as claimed in claim 1 , wherein:
the volume of said ferroelectric material changes in the phase transformation.

5. The apparatus as claimed in claim 1 , wherein:
said ferroelectric material has electrical or dielectric properties, which change in the phase transformation.

6. The apparatus as claimed in claim 1 , wherein:
the phase transformation of said ferroelectric material occurs abruptly at at least one predetermined temperature value.

7. The apparatus as claimed in claim 1 , wherein:
a phase transformation of the ferroelectric material of said substrate from a ferroelectric state to a paraelectric state, or from a paraelectric state to a ferroelectric state and/or between different crystal structures occurs at at least one predetermined temperature.

8. The apparatus as claimed in claim 1 , wherein:
said ferroelectric material serves as a substrate for a resistive element manufactured in thin film technology or thick film technology and wherein said temperature sensor comprises said resistive element.

9. The apparatus as claimed in claim 1 , wherein:
the predetermined temperature is a phase transformation temperature; and
said ferroelectric material is doped with impurity atoms.

10. The apparatus as claimed in claim 1 , wherein:
said ferroelectric material is doped with divalent alkaline earth ions and/or transition metal ions.

11. The apparatus as claimed in claim 10 , wherein:
the doping with divalent alkaline earth ions and/or transition metal ions in the ferroelectric material is less than 1% of the ferroelectric material.

12. The apparatus as claimed in claim 1 , wherein:
said ferroelectric material is doped with strontium, lead and/or titanate.

13. The apparatus as claimed in claim 12 , wherein:
the doping of the ferroelectric material with strontium, lead and/or titanate is up to 80% of the ferroelectric material.

14. The apparatus as claimed in claim 1 , wherein:
a voltage serving to polarize said ferroelectric material is applied to said ferroelectric material.

15. The apparatus as claimed in claim 1 , wherein:
said substrate serves as a carrier substrate, and a voltage serving to polarize said carrier substrate is applied to said substrate.

16. The apparatus as claimed in claim 1 , wherein:
said temperature sensor and said reference element are arranged in a single sensor head of said thermometer.

17. Method for calibrating a thermometer in situ, comprising the steps of:
using a temperature sensor for determining the temperature;
using a reference element for calibration and/or monitoring of said thermometer,
wherein said reference element at least partially comprises a ferroelectric material, said ferroelectric material serves as a substrate for said temperature sensor and said temperature sensor is located on said substrate; and
using a phase transformation of said ferroelectric material at at least one predetermined temperature for calibrating said temperature sensor;
exposing said temperature sensor and said reference element to at least one predetermined temperature at which a phase transformation of the ferroelectric material occurs,
evaluating measured values or measuring signals obtained by said temperature sensor or reference element, and
using said measured values or measuring signals for calibrating and/or monitoring the state of the temperature sensor or thermometer.

18. The method as claimed in claim 17 , further comprising the step of:
using a solid body as a ferroelectric material.

19. The method as claimed in claim 18 , wherein:
at the phase transformation of said solid body at least partially comprising said ferroelectric material, crystal structure, volume and/or dielectric or electrical properties of said ferroelectric material change, and at least one of these changes is used for calibrating said temperature sensor.

20. The method as claimed in claim 17 , wherein:
said temperature sensor and said reference element are essentially exposed to the same ambient temperature.

21. The method as claimed in claim 17 , wherein:
the thermometer is heated or cooled in order to induce the phase transformation of said ferroelectric material at the predetermined temperature.

22. The method as claimed in claim 17 , wherein:
a ferroelectric material doped with impurity atoms is used.

23. The method as claimed in claim 17 , wherein:
a ferroelectric material doped with divalent alkaline earth ions and/or transition metal ions is used for the formation of uniform crystal domains.

24. The method as claimed in claim 17 , wherein:
a ferroelectric material doped with strontium, lead and/or titanate is used.

25. The method as claimed in claim 17 , further comprising the step of:
applying a voltage serving to polarize said ferroelectric material to said ferroelectric material.

26. The method as claimed in claim 17 , further comprising the step of:
applying a voltage serving to polarize said substrate to said substrate.

Assignees

• Endress Hauser Wetzer Gmbh Co Kg

Inventors

• Schalles Marc
• Boguhn Dirk
• Seefeld Peter
• Buchner Reinhard

Classifications

• G01K15/002

  Calibrated temperature sources, temperature standards therefor (arrangements with respect to the cold junction of thermo-electric elements G01K7/12) · CPC title

• G01K7/343

  the dielectric constant of which is temperature dependant · CPC title

• G01C13/004

  vertical movement · CPC title

• G01K15/005 Primary

  Calibration · CPC title

• G01C11/22

  with mechanical projection (G01C11/26 takes precedence) · CPC title