Power controlling semiconductor device, switched-mode power supply, and method of designing the device and power-supply

Patent metadata

Field	Value
Publication number	US-10491128-B2
Application number	US-201916297382-A
Country	US
Kind code	B2
Filing date	Mar 8, 2019
Priority date	Apr 25, 2018
Publication date	Nov 26, 2019
Grant date	Nov 26, 2019

Abstract

A power controlling semiconductor device generates a drive pulse to turn on or off a switching device which applies an intermittent current to a primary side winding of a transformer in response to a voltage proportional to a present current flowing through the primary side winding of the transformer and to an output voltage detection signal from a secondary side of the transformer. The device includes a current detecting terminal and an overcurrent detecting circuit. The voltage proportional to the present current flowing through the primary side winding is applied to the current detecting terminal. The overcurrent detecting circuit compares a voltage corresponding to the voltage applied to the current detecting terminal with an upper limit current detecting voltage to detect an overcurrent. A correction current is applied to a correction resistor connected to the current detecting terminal for a shift in the voltage.

First claim

What is claimed is:

1. A power controlling semiconductor device for generation of a drive pulse to turn on or off a switching device which applies an intermittent current to a primary side winding of a transformer in response to a voltage proportional to a present current flowing through the primary side winding of the transformer and to an output voltage detection signal from a secondary side of the transformer, the device comprising:
a current detecting terminal to which the voltage proportional to the present current flowing through the primary side winding is applied;
an overcurrent detecting circuit which compares a voltage corresponding to the voltage applied to the current detecting terminal with an upper limit current detecting voltage to detect an overcurrent in the secondary side of the transformer;
a turning-on signal generating circuit which generates a turning-on signal for periodically turning on the switching device;
a turning-off signal generating circuit which generates a turning-off signal for turning off the switching device in response to the overcurrent detected by the overcurrent detecting circuit; and
a correction current generating circuit which applies a correction current to the current detecting terminal, the correction current corresponding to the output voltage at the secondary side of the transformer,
wherein the correction current generated by the correction current generating circuit is applied to a correction resistor connected to the current detecting terminal for a shift in the voltage applied to the current detecting terminal.

2. The power controlling semiconductor device according to claim 1 , further comprising:
a control terminal which receives the output voltage detection signal; and
an overcurrent limiting voltage generator which generates a predetermined overcurrent limiting voltage,
wherein the turning-off signal generating circuit comprises:
a voltage selector which selects a lower one of a voltage corresponding to the voltage at the control terminal and the overcurrent limiting voltage as the upper limit current detecting voltage; and
a voltage comparing circuit which compares the upper limit current detecting voltage selected by the voltage selector with the voltage corresponding to the voltage applied to the current detecting terminal.

3. The power controlling semiconductor device according to claim 1 , wherein
the transformer comprises an auxiliary winding, and
the correction current generating circuit comprises:
a sample holding circuit which holds a voltage corresponding to a voltage induced in the auxiliary winding or a divided voltage from the induced voltage during a demagnetization period of the transformer after turning-off of the switching device; and
a voltage-current converting circuit which generates a current corresponding to the voltage held in the sample holding circuit.

4. The power controlling semiconductor device according to claim 3 , wherein the correction current generating circuit generates the correction current in response to the output voltage detection signal, the voltage induced in the auxiliary winding, or the divided voltage from the induced voltage, such that, if a level of the output voltage detection signal increases from a first level to a second level, the correction current is adjusted to decrease the level of the output voltage detection signal to the first level or below.

5. The power controlling semiconductor device according to claim 1 , wherein
the turning-on signal generating circuit comprises an oscillating circuit which generates an oscillation signal at a predetermined frequency, and
the oscillating circuit generates the oscillation signal at a frequency corresponding to the voltage at the control terminal receiving the output voltage detection signal.

6. A switched-mode power supply comprising:
the power controlling semiconductor device according to claim 1 ;
the transformer;
the switching device which is connected in series to the primary side winding of the transformer;
a current-voltage converting resistor which is connected in series to the switching device and applies a voltage converted from a current to the current detecting terminal;
an output voltage detector which detects an output voltage at a secondary side of the transformer and transmits a detection signal to the power controlling semiconductor device; and
the correction resistor which is connected between the current detecting terminal and one terminal of the current-voltage converting resistor.

7. A method of designing a switched-mode power supply comprising the power controlling semiconductor device according to claim 3 , the method comprising:
determining a number of windings and a voltage dividing ratio of a first resistor to a second resistor such that an input voltage is applied to a terminal and generates a first correction current at a first output voltage and a second correction current at a second output voltage, an induced voltage from the auxiliary winding or a divided voltage which is divided from the induced voltage being applied to the terminal, the first resistor and the second resistor being connected to the auxiliary winding;
determining a first current limit and a second current limit for the switching device to generate a first output current at the first output voltage or a second output current at the second output voltage in the secondary side of the transformer; and
determining resistances of a current-voltage converting resistor and a correction resistor such that the resistances serve as the first and second current limits for the switching device if the first and second output voltages and the upper limit current detecting voltage serve as overcurrent limiting voltages, the current-voltage converting resistor and the correction resistor being connected to the current detecting terminal.

8. A method of designing a switched-mode power supply comprising the power controlling semiconductor device according to claim 5 , the method comprising:
determining a first upper limit current detecting voltage at a first output voltage and a first output current at the secondary side of the transformer;
determining a resistance of a current-voltage converting resistor connected to the current detecting terminal such that the first upper limit current detecting voltage is equal to the first output voltage at the first output current in the secondary side of the transformer;
determining a second upper limit current detecting voltage equal to a second output voltage at a second output current in the secondary side of the transformer; and
determining the resistance of the correction resistor such that the second upper limit current detecting voltage is equal to the second output voltage at the second output current in response to the correction current corresponding to the output voltage applied to the secondary side of the transformer by a correction current generating circuit and such that the frequency for turning on or off a switching device is held at or below a predetermined value.

9. A power controlling semiconductor device for generation of a drive pulse to turn on or off a switching device which applies an intermittent current to a primary side winding of a transformer in response to a voltage proportional to a present current flowing through the primary side winding of the transformer and to an output voltage detection signal from a secondary side of the transformer, the semiconductor device comprising:
a current detecting terminal to which the voltage proportional to the current through the primary side winding is applied;
a correction resistor which adjusts a resistance of a resistor connected to the current detecting terminal

Assignees

• Arima Satoshi
• Matsuda Hiroki
• Murata Yukio
• Mitsumi Electric Co Ltd

Inventors

• Arima Satoshi
• Matsuda Hiroki
• Murata Yukio

Classifications

• H02M3/33523 Primary

  with galvanic isolation between input and output of both the power stage and the feedback loop · CPC title

• H02M1/08

  Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title

• H02M1/14

  Arrangements for reducing ripples from DC input or output · CPC title

• H02M1/32

  Means for protecting converters other than automatic disconnection · CPC title

• H02M3/335

  using semiconductor devices only · CPC title