Method for fabricating flexible OLED panel and flexible OLED panel

Patent metadata

Field	Value
Publication number	US-10490756-B2
Application number	US-201715740279-A
Country	US
Kind code	B2
Filing date	Nov 24, 2017
Priority date	Nov 6, 2017
Publication date	Nov 26, 2019
Grant date	Nov 26, 2019

Abstract

A method for fabricating a flexible OLED panel comprises the following steps. A rigid substrate is provided. A flexible basal layer is formed on the rigid substrate. A buffer layer, a semiconductor layer and a first gate insulating layer are formed one by one on the rigid substrate. A channel doping is performed. A first gate is formed on the first gate insulating layer. A source and drain doping is performed. An activating treatment is performed and then a second gate insulating layer is formed on the first gate. A hydrogen treatment is performed and then a second gate, an organic insulating layer, a source and a drain, a planar layer and an OLED structure are formed one by one on the second gate insulating layer. A laser lift-off procedure is applied to separate the rigid substrate and the flexible basal layer for getting a flexible OLED panel.

First claim

What is claimed is:

1. A method for fabricating a flexible OLED panel, comprising:
providing a rigid substrate and forming a flexible basal layer on the rigid substrate;
forming a buffer layer, a semiconductor layer and a first gate insulating layer one by one on the rigid substrate, and forming a channel region by doping the semiconductor layer;
forming a first gate on the first gate insulating layer, and forming a source region and drain region by doping the semiconductor layer;
performing an activating treatment on the semiconductor layer, and then forming a second gate insulating layer on the first gate;
performing a hydrogen treatment on the second gate insulting layer, and then forming a second gate, an organic insulating layer, a source electrode and a drain electrode, a planar layer and an OLED structure one by one on the second gate insulating layer; and
applying a laser lift-off procedure to separate the rigid substrate and the flexible basal layer for getting a flexible OLED panel;
wherein the activating treatment is annealing 10 to 120 minutes at 400° C. to 600° C., and the hydrogen treatment is performed by applying a plasma hydrogenation process, a solid-state diffusion process or a hydrogen ion implantation process.

2. The method for fabricating a flexible OLED panel according to claim 1 , wherein the activating treatment is performed at 450° C. about 60 minutes.

3. The method for fabricating a flexible OLED panel according to claim 1 , wherein the hydrogen treatment is performed at 250° C. to 450° C. about 0.5 to 4 hours.

4. The method for fabricating a flexible OLED panel according to claim 1 , wherein a material of the organic insulating layer includes one or more of a combination of polyimide, polystyrene, teflon and silicone silsesquioxane resin.

5. The method for fabricating a flexible OLED panel according to claim 1 , wherein a thickness of the organic insulating layer is 0.8 μm to 1.2 μm.

6. The method for fabricating a flexible OLED panel according to claim 1 , wherein a material of the first gate insulating layer is one or more of a combination of silicon nitride, silicon oxide and silicon oxynitride, and a material of the second gate insulating layer includes silicon nitride.

7. The method for fabricating a flexible OLED panel according to claim 1 , wherein materials of the first gate and the second gate include one or more of a combination of molybdenum, aluminum, copper and titanium.

Assignees

• Wuhan China Star Optoelectronics Semiconductor Display Tech Co Ltd

Inventors

• Zhao Yu
• Chen Caiqin
• Ming Xing

Classifications

• H01L51/0096 Primary

  Electricity · mapped topic

• H01L51/0016

  Electricity · mapped topic

• H01L2251/5338

  Electricity · mapped topic

• H01L51/56

  Electricity · mapped topic

• H10K77/10

  Substrates, e.g. flexible substrates · CPC title