Array substrate structure and display device
US-2018012948-A1 · Jan 11, 2018 · US
Display device and method for manufacturing the same
US10490668B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10490668-B2 |
| Application number | US-201715794986-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 26, 2017 |
| Priority date | Jun 30, 2017 |
| Publication date | Nov 26, 2019 |
| Grant date | Nov 26, 2019 |
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Abstract
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Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the display device.
First claim
Opening claim text (preview).
What is claimed is: 1. A display device comprising: a first thin film transistor including a first active layer, a first insulating layer on the first active layer, and a first source electrode and a first drain electrode connected to the first active layer through a first contact hole formed in the first insulating layer; a second thin film transistor including a second active layer on the first insulating layer, a second insulating layer on the second active layer, and a second source electrode and a second drain electrode connected to the second active layer through a second contact hole formed in the second insulating layer; and a connection source electrode and a connection drain electrode connected to the first source electrode and the first drain electrode, respectively through a third contact hole formed in the second insulating layer, wherein the first source electrode and the first drain electrode are formed on a same layer as the second active layer, wherein portions of the second active layer connected to each of the second source electrode and the second drain electrode are conductivized, and wherein the first source electrode and the first drain electrode are made of a same material as portions of the second active layer connected to each of the second source electrode and the second drain electrode. 2. The display device of claim 1 , further comprising: an isolation insulating layer between the first thin film transistor and the second thin film transistor, wherein the connection source electrode and the connection drain electrode are connected to the first source electrode and the first drain electrode, respectively through the third contact hole formed in the isolation insulating layer and the second insulating layer. 3. The display device of claim 1 , wherein the first active layer is made of low temperature polycrystalline silicon (LTPS), and the second active layer is made of an oxide semiconductor. 4. The display device of claim 1 , wherein at least one of the first source electrode and the first drain electrode is in contact with an upper surface of the first active layer. 5. The display device of claim 1 , wherein the connection source electrode and the connection drain electrode are formed on a same layer as the second source electrode and the second drain electrode. 6. A display device comprising: a first thin film transistor including a first active layer, a first insulating layer on the first active layer, and a first source electrode and a first drain electrode connected to the first active layer through a first contact hole of the first insulating layer; and a second thin film transistor including a second active layer on the first insulating layer, a second insulating layer on the second active layer, and a second source electrode and a second drain electrode connected to the second active layer through a second contact hole of the second insulating layer, wherein the first source electrode and the first drain electrode are formed of a conductivized semiconductor material, and wherein the first source electrode and the first drain electrode are made of a same material as portions of the second active layer connected to the second source electrode and the second drain electrode, respectively. 7. The display device of claim 6 , wherein the first active layer is made of LTPS, and the second active layer is made of an oxide semiconductor. 8. The display device of claim 6 , wherein the first source electrode and the first drain electrode are made of different materials from the second source electrode and the second drain electrode. 9. The display device of claim 6 , further comprising: a connection source electrode and a connection drain electrode connected to the first source electrode and the first drain electrode, respectively through a third contact hole of the second insulating layer, wherein the connection source electrode and the connection drain electrode are formed on a same layer as the second source electrode and the second drain electrode.
Assignees
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US10490668B2 cover?
- Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the dis…
- Who is the assignee on this patent?
- Lg Display Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L29/78618. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 26 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).