Adiabatic polarization rotator-splitter

US10488590B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10488590-B2
Application numberUS-201715826636-A
CountryUS
Kind codeB2
Filing dateNov 29, 2017
Priority dateNov 29, 2016
Publication dateNov 26, 2019
Grant dateNov 26, 2019

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Abstract

Official abstract text for this publication.

Various polarization rotator splitter (PRS) configurations are disclosed. In an example embodiment, a system includes a PRS that includes a silicon nitride (SiN) rib waveguide core that includes a rib and a ridge that extends vertically above the rib, the SiN rib waveguide core having a total height h SiN from a bottom of the rib to a top of the ridge, a rib height h rib from the bottom of the rib to a top of the rib, a rib width w rib , and a top width w SiN of the ridge. The rib width w rib varies along at least a portion of a length of the SiN rib waveguide core.

First claim

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What is claimed is: 1. A system that includes a polarization rotator splitter (PRS), the PRS comprising: a silicon nitride (SiN) rib waveguide core that includes a rib and a ridge that extends vertically above the rib, the SiN rib waveguide core having a total height h SiN from a bottom of the rib to a top of the ridge, a rib height h rib from the bottom of the rib to a top of the rib, a rib width w rib , and a top width w SiN of the ridge; wherein: the rib laterally extends beyond a first side of the ridge and beyond a second side of the ridge between opposing first and second sides of the rib; the rib width w rib is the width of the rib from the first side of the rib to the second side of the rib; the rib width w rib varies along at least a portion of a length of the SiN rib waveguide core; the ridge of the SiN rib waveguide core comprises a first ridge that together with the rib and surrounding cladding forms a first rib waveguide; the SiN rib waveguide core further comprises a second ridge that together with the rib and surrounding cladding forms a second rib waveguide; the second ridge is spaced apart from the first ridge by a gap width w in a portion of the PRS; the top width w SiN of the first ridge is constant through the portion of the PRS; and the second ridge has a top width w SiN2 that tapers outward through the portion of the PRS. 2. The system of claim 1 , wherein the first ridge and the second ridge are separated by a port gap distance w port gap at an output of the PRS, the port gap distance w port gap at the output of the PRS being greater than the gap width w gap between the first ridge and the second ridge in the portion of the PRS. 3. The system of claim 1 , wherein: the SiN rib waveguide core has a first section of length L 1 , a second section of length L 2 , and a third section of length L 3 ; the rib is linearly tapered in each of the first and third sections; the first ridge is linearly tapered in each of the first and second sections; and at the beginning of the first section, the widths w rib and w SiN are equal to each other. 4. The system of claim 3 , wherein: the portion of the PRS comprises a fourth section of length L 4 ; and along the length L 4 of the fourth section, the rib width w rib is constant. 5. The system of claim 1 , wherein the gap width w gap is constant through the portion of the PRS. 6. The system of claim 1 , the PRS further comprising: a first stage that includes the first rib waveguide; a second stage coupled end to end with the first stage, wherein the second stage comprises the portion of the PRS with the first and second ridges of the first and second rib waveguides spaced apart by the gap width w gap ; and a third stage coupled end to end with the second stage, wherein: the third stage comprises the first rib waveguide and the second rib waveguide; the first ridge tapers inward through a first portion of the third stage and has a constant width through a remaining portion of the third stage; the second ridge tapers inward through the first portion of the third stage and has the constant width through the remaining portion of the third stage; the rib has a constant width through the first portion of the third stage; in the remaining portion of the third stage, the rib divides into a first sub-rib associated with the first ridge and a second sub-rib associated with the second ridge; each of the first and second sub-ribs tapers inward through the remaining portion of the third stage. 7. The system of claim 1 , further comprising: a SiN strip waveguide core having a first end continuously coupled to an input of the SiN rib waveguide core and a second end opposite the first end, the second end including a tapered end; and an interposer waveguide disposed above or below the tapered end of the SiN strip waveguide core and aligned laterally and longitudinally with the tapered end to form an adiabatic coupler with the SiN strip waveguide core. 8. The system of claim 7 , wherein the PRS and the SiN strip waveguide core are formed in a SiN layer of a silicon (Si) photonic integrated circuit (PIC) and wherein the PRS includes a TE port and a TM port, the Si PIC further comprising: a first wavelength division demultiplexer (demux) formed at least partially in the SiN layer of the Si PIC, the first demux including an input coupled to the TE port of the PRS; and a second demux formed at least partially in the SiN layer of the Si PIC, the second demux including an input coupled to the TM port of the PRS. 9. A system that includes a polarization rotator splitter (PRS), the PRS comprising: a first stage that includes a silicon nitride (SiN) rib waveguide core that includes a rib and a ridge that extends vertically above the rib, the SiN rib waveguide core having a total height h SiN from a bottom of the rib to a top of the ridge, a rib height h rib from the bottom of the rib to a top of the rib, a rib width w rib , and a top width w SiN of the ridge, wherein the rib width w rib varies along at least a portion of a length of the SiN rib waveguide core; a second stage that includes: a first strip waveguide core continuous with the SiN rib waveguide core and that laterally tapers inward from a first end of the first strip waveguide core to a second end of the first strip waveguide core; and a second strip waveguide core spaced apart from the first strip waveguide core by a gap width w gap , the second strip waveguide core tapering outward from a first end of the second strip waveguide core to a second end of the second strip waveguide core; and a third stage that includes: a first S-bend waveguide core continuous with the first strip waveguide core; and a second S-bend waveguide core continuous with the second strip waveguide core, wherein output ends of the first and second S-bend waveguide cores are laterally separated by a greater distance than input ends of the first and second S-bend waveguide cores. 10. The system of claim 9 , wherein: the SiN rib waveguide core has a first section of length L 1 , a second section of length L 2 , and a third section of length L 3 ; each of the rib and the ridge of the SiN rib waveguide core is linearly tapered in each of the first, second, and third sections; and at the beginning of the first section, the widths w rib and w SiN are equal to each other. 11. The system of claim 10 , wherein: the second stage has a length L 4 ; each of the first and second strip waveguide cores of the second stage is linearly tapered in the second stage through the length L 4 ; and along the length L 4 of the second stage, the gap width w gap is constant. 12. The system of claim 9 , further comprising: a SiN strip waveguide core having a first end continuously coupled to the SiN rib waveguide core and a second end opposite the first end, the second end including a tapered end; and an interposer waveguide disposed above or below the tapered end of the SiN strip waveguide core and aligned laterally and longitudinally with the tapered end to form an adiabatic coupler with the SiN strip waveguide core. 13. The system of claim 12 , wherein the PRS and the SiN strip waveguide core are formed in a SiN layer of a silicon (Si) photonic integrated circuit (PIC) and wherein the PRS includes a TE port and a TM port, the Si PIC further comprising: a first wavelength division demultiplexer (demux) formed at least partially in the SiN layer of the Si PIC, the first demux including an input coupled to the TE port of the PRS; and a second demux formed at least partially in the SiN layer of the Si PIC, the second demux includi

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What does patent US10488590B2 cover?
Various polarization rotator splitter (PRS) configurations are disclosed. In an example embodiment, a system includes a PRS that includes a silicon nitride (SiN) rib waveguide core that includes a rib and a ridge that extends vertically above the rib, the SiN rib waveguide core having a total height h SiN from a bottom of the rib to a top of the ridge, a rib height h rib from the bottom of th…
Who is the assignee on this patent?
Finisar Corp
What technology area does this patent fall under?
Primary CPC classification G02B6/126. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 26 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 10 related publications on this page (citations in our corpus or others sharing the same primary CPC).