High-density thermodynamically stable nanostructured copper-based bulk metallic systems, and methods of making the same

Patent metadata

Field	Value
Publication number	US-10487375-B2
Application number	US-201615092702-A
Country	US
Kind code	B2
Filing date	Apr 7, 2016
Priority date	Feb 29, 2012
Publication date	Nov 26, 2019
Grant date	Nov 26, 2019

Abstract

High-density thermodynamically stable nanostructured copper-based metallic systems, and methods of making, are presented herein. A ternary high-density thermodynamically stable nanostructured copper-based metallic system includes: a solvent of copper (Cu) metal; that comprises 50 to 95 atomic percent (at. %) of the metallic system; a first solute metal dispersed in the solvent that comprises 0.01 to 50 at. % of the metallic system; and a second solute metal dispersed in the solvent that comprises 0.01 to 50 at. % of the metallic system. The internal grain size of the solvent is suppressed to no more than 250 nm at 98% of the melting point temperature of the solvent and the solute metals remain uniformly dispersed in the solvent at that temperature. Processes for forming these metallic systems include: subjecting powder metals to a high-energy milling process, and consolidating the resultant powder metal subjected to the milling to form a bulk material.

First claim

The invention claimed is:

1. A binary or higher order high-density thermodynamically stable nanostructured copper-tantalum metallic system comprising:
a solvent of copper (Cu) metal that comprises 70 to 99.9 atomic percent (at. %) of the metallic system; and
a solute of tantalum (Ta) metal dispersed in the solvent metal, that comprises 0.1 to 30 at. % of the metallic system,
the metallic system having an average grain size of no more than approximately 10 nm,
wherein the metallic system is thermally stable, with the absence of substantial gross grain growth, such that the internal grain size of the solvent metal is substantially suppressed to no more than about 250 nm at approximately 98% of the melting point temperature of the solvent metal and the solute metal remains substantially uniformly dispersed in the solvent metal at that temperature.

2. The metallic system of claim 1 , wherein the metallic system has a composition of Cu-10 at. % Ta.

3. The metallic system of claim 1 , wherein the metallic system has a Vickers microhardness of about 2.5 GPa or more.

4. The metallic system of claim 3 , wherein the metallic system retains a Vickers microhardness above about 2 GPa or more at temperatures in excess of about 98% of the melting point of the solvent metal.

5. The metallic system of claim 1 , wherein the metallic system is substantially free of interstitial and or substitutional contaminants.

6. A ternary high-density thermodynamically stable nanostructured copper-based metallic system comprising:
a solvent of copper (Cu) metal that comprises 50 to 100 atomic percent (at. %) of the metallic system;
a first solute metal dispersed in the solvent metal that comprises 0.01 to 50 at. % of the metallic system; and
a second solute metal dispersed in the solvent metal that comprises 0.01 to 50 at. % of the metallic system,
the metallic system having an average grain size of no more than approximately 10 nm,
wherein the metallic system is thermally stable, with the absence of substantial gross grain growth, such that the internal grain size of the solvent metal is substantially suppressed to no more than about 250 nm at approximately 98% of the melting point temperature of the solvent metal and the solute metals remain substantially uniformly dispersed in the solvent metal at that temperature.

7. The metallic system of claim 6 , wherein the first solute metal is selected from the group consisting of: iron (Fe), molybdenum (Mo), and tantalum (Ta); and the second solute metal is selected from the group consisting of aluminum (Al), tantalum (Ta) and molybdenum (Mo), with the first and second solute metals being different.

8. The metallic system of claim 6 , wherein the metallic system has a composition of 87Cu-3.1Ta-9.9Fe at. % or 90Cu-9.6Ta-0.4Al at. %.

9. The metallic system of claim 6 , wherein the density of the metallic system is about 9.5 g/cm 3 or more.

10. The metallic system of claim 6 , wherein the metallic system has a Vickers microhardness of about 3.00 GPa or more at room temperature.

11. The metallic system of claim 10 , wherein the metallic system retains a Vickers microhardness above about 2 GPa or more at temperatures in excess of about 98% of the melting point of the solvent metal.

12. The metallic system of claim 6 , wherein the metallic system is in powdered or bulk form.

13. The metallic system of claim 12 , wherein the metallic system is in bulk form and has a compressive flow stress at quasi-static strain rates of 0.8 GPa and ductility of at least 20%.

14. The metallic system of claim 12 , wherein the metallic system is in bulk form and has a tensile flow stress at quasi-static strain rates of at least 0.6 GPa and ductility of at least 10%.

15. The metallic system of claim 12 , wherein the metallic system is in bulk form and has an electrical conductivity between 30 and 70% IACS.

16. The metallic system of claim 12 , wherein the metallic system is in bulk form and comprises: a pellet, bullet, ingot, bar, plate, disk, or sheet.

17. A shaped charge liner for ordnance fabricated from the metallic system of claim 6 .

Assignees

• U S Army Res Laboratory Attn Rdrl Loc I
• Us Army

Inventors

• Kecskes Laszlo J
• Gallagher Micah J
• Roberts Anthony J
• Darling Kristopher A
• Butler Brady G

Classifications

• C22C1/11

  Making amorphous alloys · CPC title

• B22F1/00

  Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties · CPC title

• B22F2009/041

  by mechanical alloying, e.g. blending, milling · CPC title

• B22F2998/10

  Processes characterised by the sequence of their steps · CPC title

• C22C9/00 Primary

  Alloys based on copper · CPC title