Semiconductor device, power conversion device, driving device, vehicle, and elevator

Patent metadata

Field	Value
Publication number	US-10483839-B2
Application number	US-201815896563-A
Country	US
Kind code	B2
Filing date	Feb 14, 2018
Priority date	Nov 7, 2017
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

A semiconductor device according to an embodiment includes: a first capacitor having a first end and a first the other end, the first end for electrically connecting to at least one of a first electrode and a second electrode of a transistor having the first electrode, the second electrode, and a gate electrode; a first diode having a first anode and a first cathode, the first anode electrically connected to the first the other end; a second capacitor having a second end and a second the other end, the second end electrically connected to the first cathode; a sample and hold circuit electrically connected to the first cathode and the second end; a switch electrically connected in parallel with the second capacitor between the second end and the second the other end; and a second diode having a second anode and a second cathode, the second cathode electrically connected to the first the other end and the first anode.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first capacitor having a first end and a first another end, the first end for electrically connecting to at least one of a first electrode and a second electrode of a transistor having the first electrode, the second electrode, and a gate electrode;
a first diode having a first anode and a first cathode, the first anode electrically connected to the first another end;
a second capacitor having a second end and a second another end, the second end electrically connected to the first cathode;
a sample and hold circuit electrically connected to the first cathode and the second end;
a switch electrically connected in parallel with the second capacitor between the second end and the second another end; and
a second diode having a second anode and a second cathode, the second cathode electrically connected to the first another end and the first anode,
wherein a power supply voltage V DD of the transistor, a capacitance C 1 of the first capacitor, and a capacitance C 2 of the second capacitor satisfy 15V≤(C 1 V DD )/(C 1 +C 2 ).

2. The device according to claim 1 , wherein
the first diode has a Schottky barrier diode.

3. The device according to claim 1 , wherein
the first capacitor and the second capacitor are film capacitors or ceramic capacitors.

4. The device according to claim 1 , wherein
the capacitance C 1 of the first capacitor is 1/10 or less of an output capacitance of the transistor.

5. The device according to claim 1 , wherein
the capacitance C 2 of the second capacitor is 100 pF or more.

6. The device according to claim 2 , wherein
the first diode further has a PN diode.

7. The device according to claim 6 ,
wherein the Schottky barrier diode has a third anode and a third cathode, the PN diode has a fourth anode and a fourth cathode, the third anode is electrically connected to the first another end, the third cathode is electrically connected to the fourth anode, and the fourth cathode is electrically connected to the second end.

8. The device according to claim 6 ,
wherein the Schottky barrier diode has a third anode and a third cathode, the PN diode has a fourth anode and a fourth cathode, the fourth anode is electrically connected to the first another end, the fourth cathode is electrically connected to the third anode, and the third cathode is electrically connected to the second end.

9. A power conversion device comprising:
a transistor having a first electrode, a second electrode, and a gate electrode;
a first capacitor having a first end and a first another end, the first end electrically connected to at least one of the first electrode and the second electrode;
a first diode having a first anode and a first cathode, the first anode electrically connected to the first another end;
a second capacitor having a second end and a second another end, the second end electrically connected to the first cathode;
a sample and hold circuit electrically connected to the first cathode and the second end;
a switch electrically connected in parallel with the second capacitor between the second end and the second another end;
a second diode having a second anode and a second cathode, the second cathode electrically connected to the first another end and the first anode;
a variable resistor electrically connected to the gate electrode; and
a controller configured to control a resistance value of the variable resistor based on a voltage value output from the sample and hold circuit.

10. The device according to claim 9 , wherein
the first diode has a Schottky barrier diode.

11. The device according to claim 9 , wherein
the first capacitor and the second capacitor are film capacitors or ceramic capacitors.

12. The device according to claim 9 , wherein
a power supply voltage V DD of the transistor, a capacitance C 1 of the first capacitor, and a capacitance C 2 of the second capacitor satisfy 15V≤(C 1 V DD )/(C 1 +C 2 )×V dd .

13. The device according to claim 9 , wherein
a capacitance C 1 of the first capacitor is 1/10 or less of an output capacitance of the transistor.

14. The device according to claim 9 , wherein
a capacitance C 2 of the second capacitor is 100 pF or more.

15. The device according to claim 9 , further comprising:
an analog-digital converter connected to the sample and hold circuit.

16. A driving device comprising:
the power conversion device according to claim 9 .

17. A vehicle comprising:
the power conversion device according to claim 9 .

18. An elevator comprising:
the power conversion device according to claim 9 .

19. The device according to claim 10 , wherein
the first diode further has a PN diode.

20. The device according to claim 19 ,
wherein the Schottky barrier diode has a third anode and a third cathode, the PN diode has a fourth anode and a fourth cathode, the third anode is electrically connected to the first another end, the third cathode is electrically connected to the fourth anode, and the fourth cathode is electrically connected to the second end.

21. The device according to claim 19 ,
wherein the Schottky barrier diode has a third anode and a third cathode, the PN diode has a fourth anode and a fourth cathode, the fourth anode is electrically connected to the first another end, the fourth cathode is electrically connected to the third anode, and the third cathode is electrically connected to the second end.

22. A power conversion device comprising:
a transistor having a first electrode, a second electrode, and a gate electrode;
a first capacitor having a first end and a first another end, the first end electrically connected to at least one of the first electrode and the second electrode;
a first diode having a first anode and a first cathode, the first anode electrically connected to the first another end;
a second capacitor having a second end and a second another end, the second end electrically connected to the first cathode;
a sample and hold circuit electrically connected to the first cathode and the second end;
a switch electrically connected in parallel with the second capacitor between the second end and the second another end;
a second diode having a second anode and a second cathode, the second cathode electrically connected to the first another end and the first anode,
wherein a power supply voltage V DD of the transistor, a capacitance C 1 of the first capacitor, and a capacitance C 2 of the second capacitor satisfy 15V≤(C 1 V DD )/(C 1 +C 2 )×V dd .

23. The device according to claim 22 , further comprising:
a variable resistor electrically connected to the gate electrode; and
a controller configured to control a resistance value of the variable resistor based on a voltage value output from the sample and hold circuit.

24. The device according to claim 22 , wherein
the first diode has a Schottky barrier diode.

25. The device according to claim 22 , wherein
the first capacitor and the second capacitor are film capacitors or ceramic capacitors.

26. The device according to claim 22 , wherein
the capacitance C 1 of the first capacitor is 1/10 or less of an output capacitance of the transistor.

27. The device according to claim 22 , wherein
the capacitance C 2 of the second capacitor is 100 pF or more.

28. The device according to claim 22 , further

Assignees

• Toshiba Kk

Inventors

• Ikeda Kentaro

Classifications

• H02M1/32 Primary

  Means for protecting converters other than automatic disconnection · CPC title

• G01R31/3277

  of low voltage devices, e.g. domestic or industrial devices, such as motor protections, relays, rotation switches · CPC title

• G01R31/42

  AC power supplies · CPC title

• G01R19/04

  Measuring peak values {or amplitude or envelope} of AC or of pulses · CPC title

• H02M1/34

  Snubber circuits · CPC title