Piezoelectric component and method for producing a piezoelectric component

Patent metadata

Field	Value
Publication number	US-10483454-B2
Application number	US-201615361436-A
Country	US
Kind code	B2
Filing date	Nov 27, 2016
Priority date	Aug 30, 2011
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

A method for producing a piezoelectric component is disclosed. In an embodiment, the method includes producing a ceramic precursor material of the general formula Pb 1-x-y-(2a-b)/2 V (2a-b)/2 ″Ba x Sr y [(Ti z Zr 1-z ) 1-a-b W a RE b ]O 3 , where RE is a rare earth metal and V″ is a Pb vacancy, mixing the ceramic precursor material with a sintering aid, forming a stack which includes alternating layers including the ceramic precursor material and a layer including Cu and debindering and sintering the stack thereby forming the piezoelectric component having Cu electrodes and at least one piezoelectric ceramic layer including Pb 1-x-y-[(2a-b)/2]-p/2 V [(2a-b)/2-p/2] ″Cu p Ba x Sr y [(Ti z Zr 1-z ) 1-a-b W a RE b ]O 3 , where 0≤x≤0.035, 0≤y≤0.025, 0.42≤z≤0.5, 0.0045≤a≤0.009, 0.009≤b≤0.011, and 2a>b, p≤2a−b.

First claim

What is claimed is:

1. A method for producing a piezoelectric component, the method comprising:
producing a ceramic precursor material of the general formula Pb 1-x-y-(2a-b)/2 V (2a-b)/2 ″Ba x Sr y [(Ti z Zr 1-z ) 1-a-b W a RE b ]O 3 , where RE is a rare earth metal and V″ is a Pb vacancy;
mixing the ceramic precursor material with a sintering aid;
forming a stack which includes alternating layers comprising the ceramic precursor material and a layer comprising Cu; and
debindering and sintering the stack thereby forming the piezoelectric component having Cu electrodes and at least one piezoelectric ceramic layer comprising Pb 1-x-y-[(2a-b)/2]-p/2 V [(2a-b)/2-p/2] ″Cu p Ba x Sr y [(Ti z Zr 1-z ) 1-a-b W a RE b ]O 3 , where 0≤x≤0.035, 0≤y≤0.025, 0.42≤z≤0.5, 0.0045≤a≤0.009, 0.009≤b≤0.011, and 2a>b, p≤2a-b.

2. The method according to claim 1 , wherein producing the ceramic precursor material comprises:
providing a mixture of starting materials, the mixture of starting materials are selected from the group consisting of Pb 3 O 4 , TiO 2 , ZrO 2 , WO 3 , RE 2 O 3 , BaCO 3 and SrCO 3 ;
calcining the mixture at a first temperature and milling the mixture to a first average diameter; and
calcining the mixture at a second temperature that is higher than the first temperature.

3. The method according to claim 2 , wherein the mixture obtained by mixing the ceramic precursor material with the sintering aid is milled to a second average diameter that is smaller than the first average diameter.

4. The method according to claim 3 , wherein the mixture obtained by mixing the ceramic precursor material with the sintering aid further comprises adding Cu 2 O with a fraction of 0.05 to 0.1 mol %.

5. The method according to claim 1 , wherein mixing the ceramic precursor material comprises adding PbO or Pb 3 O 4 as the sintering aid, a fraction selected for the sintering aid being between 0.5 and 3 mol %, based on 1 mol of ceramic precursor material.

6. The method according to claim 1 , wherein forming the stack comprises applying Cu to the layer comprising the ceramic precursor material by sputter-coating with Cu or printing with a Cu paste.

7. The method according to claim 1 , wherein debindering the stack takes place under steam with exclusion of oxygen.

8. The method according to claim 1 , wherein sintering the stack takes place at an oxygen partial pressure which lies between an equilibrium partial pressure of PbO/Pb and an equilibrium partial pressure of Cu/Cu 2 O.

9. The method according to claim 8 , wherein the oxygen partial pressure is set by a mixture of steam and forming gas.

10. The method according to claim 1 , wherein sintering takes place at a temperature between 1000° C. and 1050° C.

11. The method according to claim 1 , wherein x=0.0295, y=0.0211, z=0.475, a=0.00753, b=0.0095, and RE=Yb are selected, and wherein debindering and sintering the stack comprises producing a piezoelectric ceramic layer comprising Pb 0.945 V 0.00128 ″Cu 0.003 Ba 0.0295 Sr 0.0211 [Ti 0.467 Zr 0.516 W 0.00753 Yb 0.0095 ]O 3 .

12. A method for producing a piezoelectric component, the method comprising:
providing a mixture of starting materials, the mixture of starting materials are selected from the group consisting of Pb 3 O 4 , TiO 2 , ZrO 2 , WO 3 , RE 2 O 3 , BaCO 3 and SrCO 3 ;
calcining the mixture at a first temperature and milling the calcinated mixture to a first average diameter;
calcining the calcinated mixture at a second temperature that is higher than the first temperature and forming a green body;
forming a metal layer on the green body;
forming a stack of green bodies and metal layers;
debindering the stack; and
sintering the stack thereby forming the piezoelectric component with piezoelectric ceramic layers comprising Pb 1-x-y-[(2a-b)/2]-p/2 V [(2a-b)/2-p/2] ″Cu p Ba x Sr y [(Ti z Zr 1-z ) 1-a-b W a RE b ]O 3 , where RE is a rare earth metal and V″ is a Pb vacancy, where 0≤x≤0.035, 0≤y≤0.025, 0.42≤z≤0.5, 0.0045≤a≤0.009, 0.009≤b≤0.011, 2a>b and p≤2a-b.

13. The method according to claim 12 , wherein forming the metal layer comprises sputtering the metal layer.

14. The method according to claim 12 , wherein the metal layer comprises a Cu layer.

15. The method according to claim 12 , further comprising mixing the mixture calcinated at the first temperature with a sintering aid.

16. The method according to claim 15 , wherein mixing the mixture calcinated at the first temperature with the sintering aid comprises adding PbO or Pb 3 O 4 .

17. The method according to claim 15 , further comprising milling a mixture obtained by mixing the mixture calcinated at the first temperature with the sintering aid to a second average diameter that is smaller than the first average diameter.

18. The method according to claim 12 , wherein debindering the stack comprises steaming the stack with exclusion of oxygen.

19. The method according to claim 12 , wherein sintering comprises heating the stack to a temperature between 1000° C. and 1050° C.

20. The method according to claim 12 , wherein debindering and sintering the stack comprises producing the piezoelectric component comprising Pb 0.9451 V 0.00128 ″Cu 0.003 Ba 0.0295 Sr 0.0211 [Ti 0.467 Zr 0.516 W 0.00753 Yb 0.0095 ]O 3 .

Assignees

• Tdk Electronics Ag

Inventors

• Glazunov Alexander
• Feltz Adalbert

Classifications

• C04B35/493 Primary

  containing also other lead compounds · CPC title

• C04B2235/6588

  Water vapor containing atmospheres · CPC title

• C04B2235/3224

  Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide · CPC title

• C04B2235/3281

  Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O · CPC title

• C04B2235/656

  characterised by specific heating conditions during heat treatment · CPC title