Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10483115-B2
Application number	US-201715692528-A
Country	US
Kind code	B2
Filing date	Aug 31, 2017
Priority date	Apr 24, 2017
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

A semiconductor device includes a non-insulator structure, at least one carbon nano-tube (CNT), a dielectric layer, and a graphene-based conductive layer. The CNT is over the non-insulator structure. The dielectric layer surrounds the CNT. The graphene-based conductive layer is over the at least one CNT. The CNTs and the graphene-based conductive layer have low resistance.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a non-insulator structure formed in one of a source/drain region and a gate structure;
at least one carbon nano-tube (CNT) over the non-insulator structure;
a dielectric layer surrounding the CNT; and
a graphene-based conductive layer over the at least one CNT.

2. The semiconductor device of claim 1 , further comprising:
a conductive material filling interspaces between a plurality of the at least one CNTs.

3. The semiconductor device of claim 2 , wherein the non-insulator structure comprises a metal silicide, and the metal silicide and the conductive material comprise the same metal.

4. The semiconductor device of claim 1 , further comprising:
a catalyst layer between the at least one CNT and the non-insulator structure.

5. The semiconductor device of claim 4 , wherein the catalyst layer and the non-insulator structure comprise the same metal.

6. The semiconductor device of claim 1 , further comprising:
a catalyst layer between the graphene-based conductive layer and the at least one CNT.

7. The semiconductor device of claim 6 , wherein the catalyst layer wraps around the graphene-based conductive layer.

8. The semiconductor device of claim 1 , further comprising:
a conductor, wherein the graphene-based conductive layer wraps around the conductor.

9. The semiconductor device of claim 8 , wherein a top surface of the conductor is substantially level with an end surface of the graphene-based conductive layer.

10. A semiconductor device, comprising:
a non-insulator structure;
a carbon nano-tube (CNT) electrically connected to the non-insulator structure;
a first dielectric layer, the CNT being within the first dielectric layer;
a second dielectric layer over the first dielectric layer; and
a U-shaped graphene-based conductive layer within the second dielectric layer and electrically connected to the CNT.

11. The semiconductor device of claim 10 , further comprising:
a first catalyst layer; and
a second catalyst layer, wherein the CNT is in between the first catalyst layer and the second catalyst layer.

12. The semiconductor device of claim 11 , wherein the CNT is in contact with the first catalyst layer.

13. The semiconductor device of claim 11 , wherein the U-shaped graphene-based conductive layer is in contact with the second catalyst layer.

14. The semiconductor device of claim 11 , further comprising:
a metal wrapping around the CNT.

15. The semiconductor device of claim 11 , further comprising:
a metal, wherein the U-shaped graphene-based conductive layer is disposed on sidewalls and a bottom surface of the metal.

16. A method for manufacturing a semiconductor device, comprising:
forming a hole in a first dielectric layer over a non-insulator structure;
forming a carbon nano-tube (CNT) in the hole and electrically connected to the non-insulator structure;
forming a second dielectric layer over the CNT and the first dielectric layer;
forming a trench in the second dielectric layer and exposing a top surface of the CNT; and
after forming the trench, forming a graphene-based conductive layer in the trench and electrically connected to the CNT.

17. The method of claim 16 , wherein the forming the CNT comprises:
forming a catalyst layer in the hole; and
growing the CNT over the catalyst layer.

18. The method of claim 16 , further comprising:
filling the hole with a metal after the forming the CNT.

19. The method of claim 16 , wherein the forming the graphene-based conductive layer comprises:
forming a catalyst layer in the trench; and
growing the graphene-based conductive layer over the catalyst layer.

20. The method of claim 16 , further comprising:
filling the trench with a metal after the forming the graphene-based conductive layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chou You-Hua
• Chuang Kuo-Sheng

Classifications

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• H10P14/6902

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title

• H10P14/3464

  Nanotubes · CPC title

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10W42/00

  Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title