Fluid droplet methodology and apparatus for imprint lithography

US10481491B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10481491-B2
Application numberUS-201615375912-A
CountryUS
Kind codeB2
Filing dateDec 12, 2016
Priority dateDec 12, 2016
Publication dateNov 19, 2019
Grant dateNov 19, 2019

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A method can be used to generate a fluid droplet pattern for an imprint lithography process using a fluid dispense system having fluid dispense ports. The method can include determining a fluid droplet pattern for dispensing a formable material onto a substrate; during a first pass, dispensing the formable material onto the substrate to form a first part of the fluid droplet pattern for an imprint field; offsetting the fluid dispense ports and substrate relative to each other in an offset direction; and during a second pass, dispensing the formable material onto the substrate to form a second part of the fluid droplet pattern for the imprint field. The method can be used to form a patterned layer over a semiconductor wafer in fabricating an electronic device. An apparatus can be configured to carry out the method.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of generating a fluid droplet pattern for an imprint lithography process, the method comprising: during a first pass, dispensing a formable material onto a surface of a substrate by a fluid dispense system having fluid dispense ports to form a first substrate fluid droplet pattern for a first part of an imprint field of the substrate, wherein the substrate and the fluid dispense ports move relative to each other along a translating axis; offsetting the fluid dispense ports and substrate relative to each other; and during a second pass, dispensing the formable material onto the surface of the substrate by the fluid dispense system to form a second substrate fluid droplet pattern for a second part of the imprint field, wherein offsetting the fluid dispense ports and substrate relative to each other is performed between the first pass and the second pass; wherein: the first substrate fluid droplet pattern has fluid droplets of the formable material lying along a plurality of lines, wherein lines of the plurality of lines are spaced apart from one another at a pitch in a y-direction, and offsetting is along a plane parallel to the surface of the substrate in a direction of the pitch for an offset distance that is a non-integer multiple of the pitch. 2. The method of claim 1 , wherein: during the first pass, dispensing the formable material comprising dispensing fluid droplets of the formable material along a Y1 line of a drop edge exclusion; and during the second pass, dispensing the formable material comprising dispensing fluid droplets of the formable material along a Y2 line of the drop edge exclusion, wherein the offsetting direction is substantially perpendicular to the translating axis. 3. The method of claim 2 , wherein during the second pass, dispensing the formable material comprising dispensing a fluid droplet of the formable material at an intersection of an X2 line and the Y2 line of the drop edge exclusion. 4. The method of claim 1 , wherein: fluid dispense system dispenses the fluid droplets of the formable material at a preset frequency to achieve spaced-apart droplets on a substrate at a preset minimum pitch as the substrate and the fluid dispense ports move relative to each other at a preset speed along the translating axis; and the fluid droplets in the imprint field are formed at a non-integer multiple of the preset minimum pitch along the translating axis. 5. The method of claim 1 , wherein the fluid dispense ports have a fluid dispense port pitch, and the offset distance is a non-integer multiple of the fluid dispense port pitch. 6. The method of claim 1 , wherein the first substrate fluid droplet pattern is different from the second substrate fluid dispense pattern. 7. The method of claim 1 , wherein the formable material is dispensed using a same single-pass fluid droplet pattern for the first and second passes, wherein the first fluid droplet pattern is offset from the second substrate fluid droplet pattern. 8. The method of claim 1 , wherein: the fluid dispense system dispenses fluid droplets in a column lying along a line, the fluid dispense system further configured to dispense the fluid droplets of the formable material at a preset frequency to achieve spaced-apart droplets on a substrate at a preset minimum pitch as the substrate and the fluid dispense ports move relative to each other at a preset speed along the translating axis; determining a preset-defined fluid droplet pattern for dispensing the formable material onto the substrate, the preset-defined fluid droplet pattern based on at least a pattern of an imprint lithography template, and wherein the preset-defined fluid droplet pattern is representative of fluid droplets spaced apart on the substrate at the preset minimum pitch or an integer multiple thereof as the substrate and the fluid dispense ports are moved relative to each other at the preset speed along the transverse axis; determining an adjusted fluid droplet pattern based on the preset-defined fluid droplet pattern, wherein the adjusted fluid droplet pattern is representative of fluid droplets spaced apart at a non-integer multiple of the preset minimum pitch; determining an adjusted speed of the substrate and the fluid dispense ports relative to each other to generate the adjusted fluid droplet pattern formed during the first and second passes, wherein the adjusted speed is different than the preset speed during the first pass, the second pass, or each of the first and second passes; and during the first pass, the second pass, or each of the first and second passes, moving the substrate and the fluid dispense ports relative to each other at the adjusted speed along the translating axis, and dispensing the formable material through the fluid dispense ports at the preset frequency. 9. The method of claim 1 , wherein during the first and second passes, dispensing the formable material is performed such that centers of fluid droplets closest to the edges of the imprint field lie along X1, X2, Y1, and Y2 lines of a drop edge exclusion. 10. A method of manufacturing an article, the method comprising: providing a fluid dispense system having fluid dispense ports; during a first pass, dispensing a formable material onto a surface of a substrate by the fluid dispense system having fluid dispense ports to form a first substrate fluid droplet pattern for a first part of an imprint field of the substrate, wherein the substrate and the fluid dispense ports move relative to each other along a translating axis; offsetting the fluid dispense ports and substrate relative to each other after dispensing the formable material during the first pass; during a second pass, dispensing the formable material onto the surface of the substrate by the fluid dispense system to form a second substrate fluid droplet pattern for a second part of the imprint field, wherein offsetting the fluid dispense ports and substrate relative to each other is performed between the first pass and the second pass, wherein: the first substrate fluid droplet pattern has fluid droplets of the formable material lying along a plurality of lines, wherein lines of the plurality of lines are spaced apart from one another at a pitch in a y-direction, and offsetting is along a plane parallel to the surface of the substrate in a direction of the pitch for an offset distance that is a non-integer multiple of the pitch; contacting the formable material with the template having a surface; and curing the formable material to form a layer corresponding to the surface of the template. 11. The method of claim 10 , wherein the article includes an electronic device, and the substrate includes a semiconductor wafer.

Assignees

Inventors

Classifications

  • by printing or stamping · CPC title

  • forming a microstructure, i.e. fine patterning · CPC title

  • G03F7/0002Primary

    Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

  • Multipass or interlaced printing · CPC title

  • Electricity · mapped topic

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10481491B2 cover?
A method can be used to generate a fluid droplet pattern for an imprint lithography process using a fluid dispense system having fluid dispense ports. The method can include determining a fluid droplet pattern for dispensing a formable material onto a substrate; during a first pass, dispensing the formable material onto the substrate to form a first part of the fluid droplet pattern for an impr…
Who is the assignee on this patent?
Canon Kk
What technology area does this patent fall under?
Primary CPC classification G03F7/0002. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 19 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).