Mask

Patent metadata

Field	Value
Publication number	US-10481487-B2
Application number	US-201715577322-A
Country	US
Kind code	B2
Filing date	Nov 6, 2017
Priority date	Sep 11, 2017
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

A mask is provided for fabrication of a common electrode on an array substrate and includes a central portion, a first portion, and a second portion. The first portion is connected to the central portion and extends in a first direction. The second portion is connected to the central portion and extends in a second direction. The first direction and the second direction intersect each other. A first notch is formed in an interfacing site of the first portion and the central portion. A second notch is formed in an interfacing site of the second portion and the central portion. The second notch is connected to and in communication with the first notch to collectively form a first recessed zone. The mask helps reduce the potential risk of displaying defects appearing in a liquid crystal display panel using the array substrate.

First claim

What is claimed is:

1. A mask, which is adopted to fabricate a common electrode on an array substrate, comprising a central portion, a first portion, and a second portion, wherein the first portion is connected to the central portion and extends in a first direction and the second portion is connected to the central portion and extends in a second direction, the first direction and the second direction intersecting each other, a first notch being formed in an interfacing site of the first portion and the central portion, a second notch being formed in an interfacing site of the second portion and the central portion, the second notch being connected to and in communication with the first notch to collectively form a first recessed zone.

2. The mask according to claim 1 , wherein the mask further comprises a third portion, the third portion being connected to the central portion and extending in the third direction, the third direction and the first direction being opposite to each other, a third notch being formed in an interfacing site where the second portion is connected to the central portion, the third notch and the second notch being arranged opposite to each other, a fourth notch being formed in an interfacing site where the third portion is connected to the central portion, the fourth notch being connected to and in communication with the third notch to collectively form a second recessed zone.

3. The mask according to claim 2 , wherein the mask further comprises a fourth portion, the fourth portion being connected to the central portion and extending in a fourth direction, the fourth direction and the second direction being opposite to each other, a fifth notch being formed in an interfacing site where the third portion is connected to the central portion, the fifth notch and the fourth notch being arranged opposite to each other, a sixth notch being formed in an interfacing site where the first portion is connected to the central portion, the sixth notch and the first notch being arranged opposite to each other, a seventh notch and an eighth notch being formed in an interfacing site where the fourth portion is connected to the central portion and arranged opposite to each other, the seventh notch being connected to and in communication with the fifth notch to collectively form a third recessed zone, the eighth notch being connected to and in communication with the sixth notch to collectively form a fourth recessed zone.

4. The mask according to claim 3 , wherein the first direction and the second direction form therebetween an included angle of 60°-90°.

5. The mask according to claim 4 , wherein the first direction is perpendicular to the second direction.

6. The mask according to claim 3 , wherein a configuration of the first notch and a configuration of the second notch are identical and are arranged symmetric to each other.

7. The mask according to claim 3 , wherein a configuration of the third notch and a configuration of the second notch are identical and are arranged symmetric to each other.

8. The mask according to claim 3 , wherein the first recessed zone and the second recessed zone are arranged symmetric to each other with respect to the second portion.

9. The mask according to claim 3 , wherein in a direction perpendicular to the first direction, the first notch has a depth that is equal to or smaller than one half of a width of the first portion.

10. The mask according to claim 2 , wherein the first direction and the second direction form therebetween an included angle of 60°-90°.

11. The mask according to claim 10 , wherein the first direction is perpendicular to the second direction.

12. The mask according to claim 2 , wherein a configuration of the first notch and a configuration of the second notch are identical and are arranged symmetric to each other.

13. The mask according to claim 2 , wherein a configuration of the third notch and a configuration of the second notch are identical and are arranged symmetric to each other.

14. The mask according to claim 2 , wherein the first recessed zone and the second recessed zone are arranged symmetric to each other with respect to the second portion.

15. The mask according to claim 2 , wherein in a direction perpendicular to the first direction, the first notch has a depth that is equal to or smaller than one half of a width of the first portion.

16. The mask according to claim 1 , wherein the first direction and the second direction form therebetween an included angle of 60°-90°.

17. The mask according to claim 16 , wherein the first direction is perpendicular to the second direction.

18. The mask according to claim 1 , wherein a configuration of the first notch and a configuration of the second notch are identical and are arranged symmetric to each other.

19. The mask according to claim 1 , wherein in a direction perpendicular to the first direction, the first notch has a depth that is equal to or smaller than one half of a width of the first portion.

20. The mask according to claim 19 , wherein in a direction perpendicular to the second direction, the second notch has a depth that is equal to or smaller than one half of a width of the second portion.

Assignees

• Shenzehn China Star Optoelectronics Tech Co Ltd
• Shenzhen China Star Optoelect

Inventors

• An Liyang
• Xu Xiangyang

Classifications

• G02F1/1303

  Apparatus specially adapted to the manufacture of LCDs · CPC title

• G02F2201/121

  common or background · CPC title

• G03F1/38 Primary

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title

• G02F1/13439

  characterised by their electrical, optical, physical properties; materials therefor; method of making · CPC title

• G02F1/134309

  characterised by their geometrical arrangement · CPC title