Gas sensor and information processing system

Patent metadata

Field	Value
Publication number	US-10481146-B2
Application number	US-201615070325-A
Country	US
Kind code	B2
Filing date	Mar 15, 2016
Priority date	May 22, 2015
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

A gas sensor includes a p-type semiconductor layer in which a surface at a contacting side with detection target gas is covered with tertiary amine and two electrodes electrically coupled with each other through the p-type semiconductor layer.

First claim

What is claimed is:

1. A gas sensor, comprising:
a p-type semiconductor layer whose first surface as a top surface or as at least a portion of a top surface is covered with tertiary amine such that aldehyde is detected selectively; and
two electrodes electrically coupled with each other through the p-type semiconductor layer, the two electrodes being in contact with a second surface as opposing bottom surfaces or as portions of opposite sides of the portion of the top surface other than the first surface of the p-type semiconductor layer,
wherein the surface of the tertiary amine is exposed such that the detection target gas contacts at least with the surface of the tertiary amine over a region between the two electrodes, and
the p-type semiconductor layer contains any one material selected from the group consisting of cuprous bromide, cuprous oxide, cuprous sulfide, silver oxide, silver bromide and silver sulfide.

2. The gas sensor according to claim 1 , wherein, in the tertiary amine, all of atomic groups bonding to nitrogen atoms of an amino group are an alkyl group.

3. The gas sensor according to claim 1 , wherein the two electrodes are provided in a spaced relationship from each other on the second surface positioned at the opposite side to the first surface side of the p-type semiconductor layer.

4. The gas sensor according to claim 1 , further comprising a detection unit coupled with the two electrodes and configured to detect variation of an electric characteristic of the p-type semiconductor layer.

5. An information processing system, comprising:
a gas sensor including a p-type semiconductor layer whose first surface as a top surface or as at least a portion of a top surface is covered with tertiary amine such that aldehyde is detected selectively and two electrodes electrically coupled with each other through the p-type semiconductor layer, the two electrodes being in contact with a second surface as opposing bottom surfaces or as portions of opposite sides of the portion of the top surface other than the first surface of the p-type semiconductor layer, wherein the surface of the tertiary amine is exposed such that the detection target gas contacts at least with the surface of the tertiary amine over a region between the two electrodes, and the p-type semiconductor layer contains any one material selected from the group consisting of cuprous bromide, cuprous oxide, cuprous sulfide, silver oxide, silver bromide and silver sulfide; and
a computer configured to process data obtained by the gas sensor.

Assignees

• Fujitsu Ltd

Inventors

• Momose Satoru
• Karasawa Kazuaki
• Tsuboi Osamu

Classifications

• G01N33/497 Primary

  of gaseous biological material, e.g. breath · CPC title

• A61B5/082

  Evaluation by breath analysis, e.g. determination of the chemical composition of exhaled breath (A61B5/083, A61B5/091 take precedence) · CPC title

• G01N27/12

  of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid {, for detecting components in the fluid} · CPC title