Sealing process for an anodized aluminum-alloy surface

Patent metadata

Field	Value
Publication number	US-10480093-B2
Application number	US-201715593873-A
Country	US
Kind code	B2
Filing date	May 12, 2017
Priority date	May 12, 2017
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

A sealing process includes applying a first reactant to a substrate having a porous structure, the first reactant comprising a chromium (III) precursor and a transition metal precursor and applying a second reactant to the first reactant, the second reactant comprising a rare earth element precursor and an alkaline earth element precursor to form reservoirs of trivalent chromium in pore space of the porous structure, and a physical barrier over the substrate and the reservoirs.

First claim

What is claimed is:

1. A sealing process, comprising:
applying a first reactant to a substrate having a porous structure, the first reactant comprising at least one of a trivalent chromium precursor and a transition metal precursor; wherein the substrate is an anodized aluminum-alloy surface with a barrier oxide film; and
applying a second reactant to the first reactant in the porous structure, where the second reactant comprises a rare earth element precursor and an alkaline earth element precursor; and
reacting the first reactant with the second reactant to produce a physical barrier over the substrate; where the physical barrier seals the porous structure to form reservoirs that contain the trivalent chromium precursor.

2. The process as recited in claim 1 , wherein the trivalent chromium precursor includes at least one of a chromium (III) nitrate, and a chromium (III) sulfate.

3. The process as recited in claim 1 , wherein the transition metal precursor includes a precursor of at least one of zirconium and titanium.

4. The process as recited in claim 1 , wherein the rare earth element precursor includes at least one of cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb) and yttrium (Y) and the alkaline earth element precursor includes at least one of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba).

5. The process as recited in claim 1 , wherein the physical barrier is formed at a surface of the substrate.

6. The process as recited in claim 1 , wherein the physical barrier is formed within a pore space of the porous structure.

7. The process as recited in claim 1 , wherein the physical barrier includes a compound with the composition RECrO 3 , where RE is a trivalent rare earth cation that is selected from the group consisting of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium, or its Ca 2+ , Sr 2+ and Al 3+ doped forms.

8. The process as recited in claim 7 , wherein the physical barrier comprises a doped perovskite or pyrochlore crystalline structure.

9. The process as recited in claim 1 , wherein the physical barrier comprises a crystalline structure that comprises chromium, a transition metal element, a rare earth element, and an alkaline earth element.

10. The process as recited in claim 9 , further comprising crystallizing the compound into a pyrochlore structure.

11. The process as recited in claim 1 , wherein the first reactant and the second reactant forms a compound with the composition La 2 Zr 2 O 7 that crystallizes into a pyrochlore crystal structure.

12. The process as recited in claim 11 , wherein the compound contains Al 3+ by interacting with a hydrated form of aluminum oxide on pore walls of the porous structure.

13. The process as recited in claim 1 , further comprising a dopant in the first reactant.

14. The process as recited in claim 13 , wherein the dopant includes Ca 2+ and Sr 2+ precursors.

15. The process as recited in claim 11 , wherein the second reactant includes rare earth element precursor.

16. The process as recited in claim 15 , wherein a trivalent rare earth cation of the rare earth element precursor includes at least one of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, or lutetium, or its Ca 2+ , Sr 2+ and Al 3+ doped forms.

Assignees

• United Technologies Corp

Inventors

• Van Hassel Bart Antonie
• Zafiris Georgios S
• Ding Zhongfen
• Kryzman Michael A
• Jaworowski Mark R
• Li Weina
• Smith Blair A
• Zhang Weilong
• Bhaatia Promila

Classifications

• C23C2222/10

  Use of solutions containing trivalent chromium but free of hexavalent chromium · CPC title

• C23C22/83

  Chemical after-treatment · CPC title

• C23C22/73

  characterised by the process · CPC title

• C25D11/246 Primary

  for sealing layers · CPC title

• C23C28/048

  with layers graded in composition or physical properties · CPC title