Method of production of semiconductor device having semiconductor layer and support substrate spaced apart by recess

Patent metadata

Field	Value
Publication number	US-10479675-B2
Application number	US-201615757672-A
Country	US
Kind code	B2
Filing date	Sep 9, 2016
Priority date	Sep 30, 2015
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.

First claim

The invention claimed is:

1. A semiconductor device production method, comprising:
performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed, wherein
in the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and
the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential during the trench etching,

the first pattern portion and the second pattern portion are made in a state of having the same potential during the trench etching by performing the trench etching so that the first pattern portion and the second pattern portion, after the trench is formed, are connected to each other by a coupling portion as a portion of the semiconductor layer other than the first and second pattern portions,
in the trench etching, a semiconductor substrate in which a surface of the semiconductor layer opposite to a surface on a starting side of the trench etching is joined to a support substrate through an insulating film and having a recessed portion is used, and
the semiconductor substrate has, before the trench etching, the recessed portion in a surface of the semiconductor layer adjacent to the support substrate or in a surface of the support substrate adjacent to the semiconductor layer at a portion of the semiconductor layer corresponding to a trench forming portion of the semiconductor layer so that the semiconductor layer and the support substrate are separated from each other.

2. The semiconductor device production method according to claim 1 , wherein:
the trench etching is performed to further form, in the semiconductor layer, a third pattern portion and a fourth pattern portion whose side walls face each other across the trench and which are electrically isolated from each other after the trench is formed, and
the trench etching is performed to provide a structure in which a total area of a surface of a trench etching starting side and side walls of the third pattern portion is equal to a total area of a surface of a trench etching starting side and side walls of the fourth pattern portion.

3. The semiconductor device production method according to claim 2 , wherein
the third and fourth pattern portions are subjected to the trench etching in a state where both of a portion of the semiconductor layer configuring the third pattern portion and the semiconductor layer configuring the fourth pattern portion are joined to and supported on the support substrate through the insulating film at a portion other than the trench forming portion, and
the trench etching is performed in a state where a joint surface area between the third pattern portion and the insulating film is equal to a joint surface area between the fourth pattern portion and the insulating film.

4. The semiconductor device production method according to claim 1 , wherein:
the trench etching is performed to further form, in the semiconductor layer, a third pattern portion and a fourth pattern portion whose side walls face each other across the trench and which are electrically isolated from each other after the trench is formed,
the third and fourth pattern portions are subjected to the trench etching in a state where both of a portion of the semiconductor layer configuring the third pattern portion and the semiconductor layer configuring the fourth pattern portion are joined to and supported on the support substrate through the insulating film at a portion other than the trench forming portion, and
the trench etching is performed in a state where a joint surface area between the third pattern portion and the insulating film is equal to a joint surface area between the fourth pattern portion and the insulating film.

5. A semiconductor device production method, comprising
performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed, wherein:
in the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer,
the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching,
the trench etching is performed to form the first pattern portion and the second pattern portion so that the first pattern portion and the second pattern portion are electrically isolated from each other after the trench is formed, and
the trench etching is performed to provide a structure in which a total area of a surface of a trench etching starting side and side walls of the first pattern portion is equal to a total area of a surface of a trench etching starting side and side walls of the second pattern portion.

6. A semiconductor device production method, comprising
performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed, wherein:
in the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer,
the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching,
the trench etching is performed to form the first pattern portion and the second pattern portion so that the first pattern portion and the second pattern portion are electrically isolated from each other after the trench is formed, and
the first and second pattern portions are subjected to the trench etching in a state where both of a portion of the semiconductor layer configuring the first pattern portion and the semiconductor layer configuring the second pattern portion are joined to and supported on a support substrate through an insulating film at a portion other than a trench forming portion, and
the trench etching is performed in a state where a joint surface area between the first pattern portion and the insulating film is equal to a joint surface area between the second pattern portion and the insulating film.

7. A semiconductor device production method comprising
performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed, wherein:
in the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer,
the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same temperature during the trench etching, and
the trench etching is performed to provide a structure in which at least one of the first pattern portion and the second pattern portion has a heat escape portion that releases heat from the at least one pattern portion, so that both of the first pattern portion and the second pattern portion have the same temperature during the trench etching.

Assignees

• Denso Corp

Inventors

• Ogawa Akira
• Noda Yoshitaka
• Yoshioka Tetsuo
• Shimizu Yuhei

Classifications

• B81B2201/033

  Comb drives · CPC title

• G01P15/0802

  Details · CPC title

• G01P15/125

  by capacitive pick-up · CPC title

• B81C2201/0132

  Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling · CPC title

• G01P2015/0814

  for translational movement of the mass, e.g. shuttle type · CPC title