Electrically conductive thin films
US-2015380122-A1 · Dec 31, 2015 · US
US10475979B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10475979-B2 |
| Application number | US-201715461546-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 17, 2017 |
| Priority date | Jan 6, 2009 |
| Publication date | Nov 12, 2019 |
| Grant date | Nov 12, 2019 |
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A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: R a T b X 2-n Y n (1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.
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What is claimed is: 1. A thermoelectric material represented by Formula 1, comprising a layered structure having a disordered structure in an in-plane direction: R a T b X 2-n Y n (1) wherein R is a rare earth element, T comprises at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X comprises at least one element selected from the group consisting of S, Se, and Te, Y is different from X and comprises at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2, wherein the thermoelectric material having a layered structure comprises a first layer comprising X, or X and Y; and a second layer comprising X and R, or X and Y and R, and wherein the first layer and the second layer are alternately arranged and T is intercalated between the first layer and the second layer. 2. The thermoelectric material of claim 1 , wherein the thermoelectric material comprises a lattice distortion formed by a charge density wave. 3. The thermoelectric material of claim 1 , wherein the thermoelectric material comprises two-dimensional electrical conductivity characteristics. 4. The thermoelectric material of claim 1 , wherein the thermoelectric material comprises a bulk phase. 5. The thermoelectric material of claim 1 , wherein in a crystal structure of the thermoelectric material, elements R and T are disposed between layers consisting of element X. 6. The thermoelectric material of claim 1 , wherein a+b is greater than 1 and less than 2. 7. The thermoelectric material of claim 1 , wherein n is 0. 8. The thermoelectric material of claim 1 , wherein the thermoelectric material is polycrystalline. 9. The thermoelectric material of claim 1 , wherein the thermoelectric material is single-crystalline. 10. A thermoelectric device comprising: a first electrode; a second electrode; and the thermoelectric material of claim 1 interposed between the first electrode and the second electrode. 11. A thermoelectric apparatus comprising: a heat source; and a thermoelectric device, the thermoelectric device comprising a first electrode; a second electrode; and the thermoelectric material of claim 1 interposed between the first electrode and the second electrode.
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