Image sensor device structure with doping layer in light-sensing region

Patent metadata

Field	Value
Publication number	US-10475828-B2
Application number	US-201815868324-A
Country	US
Kind code	B2
Filing date	Jan 11, 2018
Priority date	Nov 21, 2017
Publication date	Nov 12, 2019
Grant date	Nov 12, 2019

Abstract

An image sensor device structure is provided. The image sensor device structure includes a substrate, and the substrate is doped with a first conductivity type. The image sensor device structure includes a light-sensing region formed in the substrate, and the light-sensing region is doped with a second conductivity type that is different from the first conductivity type. The image sensor device structure further includes a doping region extended into the light-sensing region, and the doping region is doped with the first conductivity type. The image sensor device structure also includes a plurality of color filters formed on the doping region.

First claim

What is claimed is:

1. An image sensor device structure, comprising:
a substrate, wherein the substrate is doped with a first conductivity type;
a light-sensing region formed in the substrate, wherein the light-sensing region is doped with a second conductivity type that is different from the first conductivity type;
a doping region extended into the light-sensing region, wherein the doping region is doped with the first conductivity type, and the doping region comprises an inner oxide layer and an outer doping layer, and the outer doping layer is between the inner oxide layer and the light-sensing region; and
a plurality of color filters formed on the doping region.

2. The image sensor device structure as claimed in claim 1 , wherein the substrate is doped with p-type conductivity, the light-sensing region is doped with n-type conductivity, and the doping region is doped with p-type conductivity.

3. The image sensor device structure as claimed in claim 1 , wherein the light-sensing region comprises a first portion with a first doping concentration and a second portion with a second doping concentration, the first portion is closer to the doping region than the second portion, the second doping concentration is higher than the first doping concentration, and the doping region is in direct contact with the first portion.

4. The image sensor device structure as claimed in claim 3 , wherein the doping region has a third doping concentration, and the third doping concentration is higher than the second doping concentration.

5. The image sensor device structure as claimed in claim 1 , further comprising:
a deep isolation ring surrounding the light-sensing region, wherein the doping region has a first depth, and the deep isolation ring has a second depth which is greater than the first depth.

6. The image sensor device structure as claimed in claim 5 , wherein the deep isolation ring comprises:
a doping layer, wherein the doping layer is doped with the first conductivity type, and the doping layer is in direct contact with the substrate; and
an oxide layer over the doping layer.

7. The image sensor device structure as claimed in claim 6 , wherein the deep isolation ring further comprises a high-k dielectric layer between the doping layer and the oxide layer.

8. The image sensor device structure as claimed in claim 1 , further comprising:
a transistor device formed over the substrate; and
an interconnect structure formed on the transistor device.

9. The image sensor device structure as claimed in claim 1 , further comprising:
a plurality of metal grid structures over the oxide layer and the light-sensing region, wherein the metal grid structures are between the doping region and the color filters.

10. An image sensor device structure, comprising:
a p-type substrate, wherein the p-type substrate has a first surface and a second surface;
an interconnect structure formed on the first surface of the p-type substrate;
an n-type light-sensing region formed in the substrate;
a p-type doping region inserted into the n-type light-sensing region from the second surface of the substrate, wherein the p-type doping region comprises a p-type doping layer and an oxide layer formed over the p-type doping layer; and
a deep isolation ring surrounding the n-type light-sensing region, wherein the deep isolation ring comprises the p-type doping layer and the oxide layer.

11. The image sensor device structure as claimed in claim 10 , wherein the doping region has a first depth, and the deep isolation ring has a second depth which is greater than the first depth.

12. The image sensor device structure as claimed in claim 10 , further comprising:
a plurality of color filters formed on the oxide layer; and
a plurality of microlens structure formed on the color filters.

13. The image sensor device structure as claimed in claim 10 , wherein the deep isolation ring further comprises the oxide layer over the p-type doping layer.

14. The image sensor device structure as claimed in claim 10 , wherein the deep isolation ring further comprises a high-k dielectric layer between the p-type doping layer and the oxide layer.

15. The image sensor device structure as claimed in claim 10 , wherein the n-type light-sensing region comprises a first portion with a first doping concentration and a second portion with a second doping concentration, the first portion is closer to the p-type doping region than the second portion, the second doping concentration is higher than the first doping concentration, and the p-type doping region is in direct contact with the first portion.

16. The image sensor device structure as claimed in claim 10 , further comprising:
a transistor device structure formed over the first surface of the p-type substrate; and
an n-type floating node region formed in the p-type substrate, wherein a portion of the deep isolation ring is directly above the n-type floating node region.

17. An image sensor device structure, comprising:
a substrate, wherein the substrate has a first surface and a second surface;
an interconnect structure formed on the first surface of the substrate;
a light-sensing region formed in the substrate;
a doping region inserted into the light-sensing region, wherein the doping region comprises a doping layer;
a deep isolation ring surrounding the light-sensing region, wherein the doping layer extends from the doping region to a position which is in the deep isolation ring;
a plurality of color filters formed on the doping region and the deep isolation ring, wherein the doping layer protrudes into the light-sensing region along a direction farther away from the color filters; and
a plurality of microlens structures formed on the color filters.

18. The image sensor device structure as claimed in claim 17 , wherein the deep isolation ring comprises:
a high-k dielectric layer formed in the deep isolation ring and below the doping layer; and
a oxide layer formed on the high-k dielectric layer.

19. The image sensor device structure as claimed in claim 17 , wherein the light-sensing region comprises a first portion with a first doping concentration and a second portion with a second doping concentration, the second portion is closer to the transistor device than the first portion, the second doping concentration is higher than the first doping concentration, and the doping region is in direct contact with the first portion.

20. The image sensor device structure as claimed in claim 17 , further comprising:
a transistor device formed over the first surface of the substrate, wherein the transistor device is between the interconnect structure and the doping region.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chiang Yen-Ting
• Chen Chun-Yuan
• Tseng Hsiao-Hui
• Wang Yu-Jen
• Ting Shyh-Fann
• Wu Wei-Chuang
• Liu Jen-Cheng
• Yaung Dun-Nian

Classifications

• H01L27/14612

  Electricity · mapped topic

• H01L31/11

  Electricity · mapped topic

• H01L31/03529

  Electricity · mapped topic

• H01L27/14638

  Electricity · mapped topic

• H01L27/14629

  Electricity · mapped topic