Dielectric composites, and multi-layered capacitors and electronic devices comprising thereof

Patent metadata

Field	Value
Publication number	US-10475583-B2
Application number	US-201815875386-A
Country	US
Kind code	B2
Filing date	Jan 19, 2018
Priority date	Jan 19, 2017
Publication date	Nov 12, 2019
Grant date	Nov 12, 2019

Abstract

A dielectric composite including a plurality of crystal grains including a semiconductor or conductive material, and a grain boundary insulation layer between the crystal grains, wherein the grain boundary insulation layer includes a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains, and a multi-layered capacitor and an electronic device including the same.

First claim

What is claimed is:

1. A dielectric composite, comprising:
a plurality of crystal grains comprising a semiconductor or conductive material, and
a grain boundary insulation layer between the crystal grains,
wherein the grain boundary insulation layer comprises a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains.

2. The dielectric composite of claim 1 , wherein the two-dimensional layered material comprises a single layer.

3. The dielectric composite of claim 1 , wherein the two-dimensional layered material comprises two or more laminated layers.

4. The dielectric composite of claim 1 , wherein the two-dimensional layered material directly contacts the surface of at least one of the crystal grains.

5. The dielectric composite of claim 1 , wherein the two-dimensional layered material covers an entirety of the surface of at least one of the crystal grains.

6. The dielectric composite of claim 1 , wherein the two-dimensional layered material has a thickness of less than or equal to about 120 nanometers.

7. The dielectric composite of claim 1 , wherein the two-dimensional layered material has a relative permittivity of greater than or equal to about 50 and less than or equal to about 1000.

8. The dielectric composite of claim 1 , wherein the grain boundary insulation layer further comprises a three-dimensional bulk material combined with the two-dimensional layered material.

9. The dielectric composite of claim 1 , wherein the two-dimensional layered material is present in a range of about 10 volume % to about 100 volume %, based on 100 volume % of the grain boundary insulation layer.

10. The dielectric composite of claim 1 , wherein the two-dimensional layered material is delaminated from a material comprising an aurivillius phase, a material comprising a Ruddlesden-Popper phase, a material comprising a Dion-Jacobson phase, titano-niobate, or a combination thereof.

11. The dielectric composite of claim 1 , wherein the two-dimensional layered material is represented by Chemical Formula 1:
X m (A (n-1) B′ n O (3n+1) )  Chemical Formula 1

wherein, in Chemical Formula 1, X comprises H, an alkali metal, a cationic compound, or a combination thereof, A comprises Ca, Na, Ta, Bi, Ba, Sr, or a combination thereof, B comprises W, Mo, Cr, Ta, Nb, V, Zr, Hf, Pb, Sn, La, Ti, or a combination thereof, 0≤m≤2, and n≥1.

12. The dielectric composite of claim 11 , wherein X comprises the cationic compound, and the cationic compound comprises a tetramethylammonium compound, a tetraethylammonium compound, a tetrapropylammonium compound, a tetrabutylammonium compound, a methylamine compound, an ethylamine compound, a propylamine compound, a butylamine compound, a polyethylenimine compound, or a combination thereof.

13. The dielectric composite of claim 11 , wherein the two-dimensional layered material represented by Chemical Formula 1 is electrically neutral.

14. The dielectric composite of claim 1 , wherein the crystal grains comprise barium titanate, strontium titanate, lead titanate, lead zirconate, lead titanate zirconate, or a combination thereof.

15. The dielectric composite of claim 1 , wherein the crystal grains have an average particle diameter in a range of about 50 nanometers to about 2 micrometers.

16. The dielectric composite of claim 1 , wherein the dielectric composite has a relative permittivity of greater than or equal to about 1,000 and less than or equal to about 20,000.

17. A multi-layered capacitor comprising:
laminated alternate layers comprising
an internal electrode, and
a dielectric layer,

wherein the dielectric layer comprises the dielectric composite of claim 1 .

18. The multi-layered capacitor of claim 17 , wherein the internal electrode and the dielectric layer comprise three or more laminated layers.

19. The multi-layered capacitor of claim 17 , wherein the dielectric layer has a thickness of less than about 500 nanometers.

20. The multi-layered capacitor of claim 17 , wherein the dielectric layer has a relative permittivity of greater than or equal to about 4,000 and less than or equal to about 40,000.

21. An electronic device comprising the dielectric composite of claim 1 .

22. The electronic device of claim 21 , wherein the electronic device is a varistor, a thermistor, or a capacitor for storing energy.

23. The dielectric composite of claim 1 , where the grain boundary insulation layer surrounds one or more of the crystal grains.

24. A dielectric composite, comprising:
a plurality of crystal grains comprising a semiconductor or conductive material, and
a grain boundary insulation layer between the crystal grains,
wherein the grain boundary insulation layer comprises a material represented by Chemical Formula 1:
X m (A (n-1) B′ n O (3n+1) )  Chemical Formula 1

wherein, in Chemical Formula 1, X comprises H, an alkali metal, a cationic compound, or a combination thereof, A comprises Ca, Na, Ta, Bi, Ba, Sr, or a combination thereof, B comprises W, Mo, Cr, Ta, Nb, V, Zr, Hf, Pb, Sn, La, Ti, or a combination thereof, 0≤m≤2, and n≥1, and
wherein the grain boundary insulation layer has a thickness in a range of about 5 nanometers to about 99 nanometers.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kwak Chan
• Kim Hyun Sik
• Roh Jong Wook
• Moon Kyoung-Seok
• Park Hyeon Cheol
• Son Yoon Chul
• Yang Daejin
• Jung Doh Won
• Cho Youngjin

Classifications

• H01G4/1227

  based on alkaline earth titanates · CPC title

• H01C7/1006

  Thick film varistors · CPC title

• C04B35/62815

  Rare earth metal oxides · CPC title

• H01G4/1245

  containing also titanates · CPC title

• H01C17/06533

  composed of oxides · CPC title