On-chip, wideband, differentially fed antennas with integrated bias structures

US10473587B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10473587-B2
Application numberUS-201715598844-A
CountryUS
Kind codeB2
Filing dateMay 18, 2017
Priority dateMay 19, 2016
Publication dateNov 12, 2019
Grant dateNov 12, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Terahertz (THz) or millimeter wave (mmW) band characterization of a differential-mode device under test (DUT) is performed using a non-contact probing setup based on an integrated circuit that includes the on-chip DUT and an on-chip test fixture as follows. A differential transmission line pair is operatively coupled with the DUT. A first differential antenna pair at a first end of the transmission line pair has a first antenna connected only with the first transmission line and a second antenna connected only with the second transmission line. A second differential antenna pair is likewise connected with a second end of the differential transmission line pair. A THz or mmW transmitter radiates a probe THz or mmW beam to the first differential antenna pair, and an electronic analyzer receives a THz or mmW signal radiated by the second differential antenna pair responsive to the radiation of the probe THz or mmW beam to the first differential antenna pair, thus enabling no-contact S-parameter measurements for characterizing differential-mode, on-wafer, active or passive devices and integrated circuits.

First claim

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The invention claimed is: 1. An apparatus for performing terahertz (THz) or millimeter wave (mmW) characterization, the apparatus comprising: an integrated circuit including an on-chip device under test (DUT) and an on-chip test fixture including: a differential transmission line pair comprising parallel first and second transmission lines operatively coupled with the DUT wherein the first transmission line comprises two conductors and the second transmission line comprises two conductors; a first differential antenna pair connected with a first end of the differential transmission line pair and including a first antenna connected only with the first transmission line and a second antenna connected only with the second transmission line; and a second differential antenna pair connected with a second end of the differential transmission line pair and including a third antenna connected only with the first transmission line and a fourth antenna connected only with the second transmission line; a THz or mmW transmitter arranged to radiate a probe THz or mmW beam to the first differential antenna pair of the test fixture; and an electronic analyzer configured to receive a THz or mmW signal radiated by the second differential antenna pair of the test fixture responsive to the radiation of the probe THz or mmW beam to the first differential antenna pair of the test fixture. 2. The apparatus of claim 1 wherein: the first differential antenna pair forms a first balun that suppresses any common mode signal on the first end of the differential transmission line pair; and the second differential antenna pair forms a second balun that suppresses any common mode signal on the second end of the differential transmission line pair. 3. The apparatus of claim 2 wherein the on-chip fixture does not include any balun other than the first and second differential antenna pairs. 4. The apparatus of claim 1 wherein at least one of the first differential antenna pair and the second differential antenna pair includes two DC bias pads. 5. The apparatus of claim 4 wherein the integrated circuit is disposed on a wafer and the THz or mmW transmitter and the electronic analyzer are arranged to radiatively couple with the on-chip test fixture from a back-side of the wafer without contacting the integrated circuit. 6. The apparatus of claim 1 wherein the first and second transmission lines of the differential transmission line pair are coplanar waveguide (CPW) transmission lines. 7. The apparatus of claim 1 wherein the on-chip DUT includes a THz or mmW mixer, a THz or mmW voltage-controlled oscillator, or a THz or mmW amplifier. 8. A method for performing terahertz (THz) or millimeter wave (mmW) characterization of a device under test (DUT) comprising a component of an integrated circuit wherein the DUT is connected with an on-chip differential transmission line pair comprising parallel first and second transmission lines wherein the first transmission line comprises two conductors and the second transmission line comprises two conductors, the method comprising: exciting the DUT in differential mode by radiating a probe THz or mmW beam to a first on-chip differential antenna pair of the integrated circuit wherein the first on-chip differential antenna pair is connected with a first end of the on-chip differential transmission line pair and comprises a common mode-suppressing balun; and receiving a THz or mmW differential signal generated by the DUT in response to the exciting wherein the THz or mmW signal is received via radiation by a second on-chip differential antenna pair of the integrated circuit wherein the second on-chip differential antenna pair is connected with a second end of the on-chip differential transmission line pair and comprises a common mode-suppressing balun; wherein the excitation produces a first electric current in the first transmission line of the on-chip differential transmission line pair and a second electric current in the second transmission line of the on-chip differential transmission line pair having a 180° phase difference compared with the first electric current. 9. The method of claim 8 wherein: the first on-chip differential antenna pair includes a first antenna connected only with the first transmission line of the on-chip differential transmission line pair and a second antenna connected only with the second transmission line of the on-chip differential transmission line pair; and the second on-chip differential antenna pair includes a third antenna connected only with the first transmission line of the on-chip differential transmission line pair and a fourth antenna connected only with the second transmission line of the on-chip differential transmission line pair. 10. The method of claim 8 wherein: the excitation of the DUT in differential mode does not use any electrical contact to the integrated circuit; and the reception of the THz or mmW differential signal generated by the DUT in response to the excitation does not use any electrical contact to the integrated circuit. 11. An integrated circuit comprising: an on-chip device under test (DUT); and on-chip differential-mode non-contact probes including: a differential transmission line pair comprising parallel first and second transmission lines operatively coupled with the DUT; a first differential antenna pair connected with a first end of the differential transmission line pair and including a first antenna having a port connected only with the first transmission line and a second antenna having a port connected only with the second transmission line; and a second differential antenna pair connected with a second end of the differential transmission line pair and including a third antenna having a port connected only with the first transmission line and a fourth antenna having a port connected only with the second transmission line wherein the first differential antenna pair is configured to energize the first end of the differential transmission line pair in response to received THz or mmW radiation by the first antenna producing a first electric current in the first transmission line of the differential transmission line pair and the second antenna producing a second electric current in the second transmission line of the differential transmission line pair, wherein the first electric current and the second electric current have a 180° phase difference. 12. The integrated circuit of claim 11 wherein: the first differential antenna pair comprises a first balun; and the second differential antenna pair comprises a second balun. 13. The integrated circuit of claim 12 wherein the on-chip differential-mode non-contact probes do not include any balun other than the first and second differential antenna pairs. 14. The integrated circuit of claim 11 wherein: the first differential antenna pair suppresses any common-mode signal on the first end of the differential transmission line pair; and the second differential antenna pair suppresses any common-mode signal on the second end of the differential transmission line pair. 15. The integrated circuit of claim 11 wherein at least one of the first differential antenna pair and the second differential antenna pair includes two DC bias pads. 16. The integrated circuit of claim 11 wherein the first and second transmission lines of the differential transmission line pair are coplanar waveguide (CPW) transmission lines. 17. The integrated circuit of claim 11 wherein the on-chip DUT includes a THz or mmW mixer, a THz or mmW voltage-control

Assignees

Inventors

Classifications

  • Horn reflector antennas; Off-set feeding · CPC title

  • Combinations of reflecting surfaces with refracting or diffracting devices · CPC title

  • providing sum and difference patterns (H01Q25/04 takes precedence) · CPC title

  • of integrated circuits {(G01R31/31728 takes precedence)} · CPC title

  • of integrated circuits (G01R31/305 - G01R31/315 take precedence) · CPC title

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What does patent US10473587B2 cover?
Terahertz (THz) or millimeter wave (mmW) band characterization of a differential-mode device under test (DUT) is performed using a non-contact probing setup based on an integrated circuit that includes the on-chip DUT and an on-chip test fixture as follows. A differential transmission line pair is operatively coupled with the DUT. A first differential antenna pair at a first end of the transmis…
Who is the assignee on this patent?
Ohio State Innovation Foundation
What technology area does this patent fall under?
Primary CPC classification G01R31/2822. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 12 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).