Lateral P-N junction black phosphorus thin film, and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10468604-B2
Application number	US-201615393173-A
Country	US
Kind code	B2
Filing date	Dec 28, 2016
Priority date	Dec 19, 2016
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.

First claim

What is claimed is:

1. A lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film and a n-type black phosphorus thin film form a lateral junction,
wherein the n-type black phosphorus thin film is surface-modified by a diazirine compound represented by Chemical Formula 1 below to have a n-type semiconductor property

in Chemical Formula 1,
L1 is a direct bond, C1-C20 alkylene group, C5-C30 cycloalkylene group, C6-C30 arylene group, or a combination thereof, and
R1 and R2 are each independently C1-C20 alkyl group, C5-C30 cycloalkyl group, C6-C30 aryl group, C1-C20 alkoxy group, C1-C20 hydroxyalkyl group, halogen group, amine group, nitro group, sulfonic acid group, C1-C20 heteroalkyl group including at least one heteroatom in which electronegativity is 2.5 or more, C5-C30 heterocycloalkyl group including at least one heteroatom in which electronegativity is 2.5 or more, C6-C30 heteroaryl group including at least one heteroatom in which electronegativity is 2.5 or more, or a combination thereof,
wherein at least one hydrogen in the alkylene group, cycloalkylene group, arylene group, alkyl group, cycloalkyl group, aryl group, alkoxy group, and hydroxyalkyl group is each independently unsubstituted or substituted with a substituent, the substituent being C1-C20 alkyl group, C1-C20 alkoxy group, C1-C20 hydroxyalkyl group, C5-C30 cycloalkyl group, C6-C30 aryl group, halogen group, or amino group.

2. The lateral p-n junction black phosphorus thin film of claim 1 , wherein the diazirine compound is represented by Chemical Formula 2 below:

in Chemical Formula 2,
R 22 and R 33 are each independently C1-C20 alkoxy group, C1-C20 hydroxyalkyl group, halogen group, amine group, nitro group, sulfonic acid group or C1-C20 heteroalkyl group including at least one heteroatom in which electronegativity is 2.5 or more, and n is an integer of 1 to 3.

3. The lateral p-n junction black phosphorus thin film of claim 1 , wherein linewidths of the n-type black phosphorus thin film and the p-type black phosphorus thin film are each independently 100 to 100,000 nm.

4. A semiconductor device comprising the lateral p-n junction black phosphorus thin film of claim 1 .

5. The semiconductor device of claim 4 , wherein the semiconductor device is a diode, a transistor, a thyristor, an optical device, a solar cell, or an integrated circuit.

6. A method of manufacturing a lateral p-n junction black phosphorus thin film comprising:
a) coating a surface of a black phosphorus thin film with a diazirine compound represented by Chemical Formula 1 below;
b) forming a patterned photomask on an upper part of the black phosphorus thin film coated with the diazirine compound; and
c) modifying a region exposed by the photomask into a n-type black phosphorus thin film through light irradiation:

 in Chemical Formula 1,
L 1 is a direct bond, C1-C20 alkylene group, C5-C30 cycloalkylene group, C6-C30 arylene group, or a combination thereof, and
R 1 and R 2 are each independently C1-C20 alkyl group, C5-C30 cycloalkyl group, C6-C30 aryl group, C1-C20 alkoxy group, C1-C20 hydroxyalkyl group, halogen group, amine group, nitro group, sulfonic acid group, C1-C20 heteroalkyl group including at least one heteroatom in which electronegativity is 2.5 or more, C5-C30 heterocycloalkyl group including at least one heteroatom in which electronegativity is 2.5 or more, C6-C30 heteroaryl group including at least one heteroatom in which electronegativity is 2.5 or more, or a combination thereof,
wherein at least one hydrogen in the alkylene group, cycloalkylene group, arylene group, alkyl group, cycloalkyl group, aryl group, alkoxy group, and hydroxyalkyl group is each independently unsubstituted or substituted with a substituent, the substituent being C1-C20 alkyl group, C1-C20 alkoxy group, C1-C20 hydroxyalkyl group, C5-C30 cycloalkyl group, C6-C30 aryl group, halogen group, or amino group.

7. The method of claim 6 , wherein the light irradiation in c) is performed for 1 to 60 minutes at a light quantity of 1 to 1000 W.

8. The method of claim 7 , wherein the light has a wavelength of 200 to 500 nm.

9. A n-type black phosphorus thin film which is surface-modified by a diazirine compound represented by Chemical Formula 1 below:

in Chemical Formula 1,
L 1 is a direct bond, C1-C20 alkylene group, C5-C30 cycloalkylene group, C6-C30 arylene group, or a combination thereof, and
R 1 and R 2 are each independently C1-C20 alkyl group, C5-C30 cycloalkyl group, C6-C30 aryl group, C1-C20 alkoxy group, C1-C20 hydroxyalkyl group, halogen group, amine group, nitro group, sulfonic acid group, C1-C20 heteroalkyl group including at least one heteroatom in which electronegativity is 2.5 or more, C5-C30 heterocycloalkyl group including at least one heteroatom in which electronegativity is 2.5 or more, C6-C30 heteroaryl group including at least one heteroatom in which electronegativity is 2.5 or more, or a combination thereof,
wherein at least one hydrogen in the alkylene group, cycloalkylene group, arylene group, alkyl group, cycloalkyl group, aryl group, alkoxy group, and hydroxyalkyl group is each independently unsubstituted or substituted with a substituent, the substituent being C1-C20 alkyl group, C1-C20 alkoxy group, C1-C20 hydroxyalkyl group, C5-C30 cycloalkyl group, C6-C30 aryl group, halogen group, or amino group.

10. A method of manufacturing a n-type black phosphorus thin film comprising:
A) coating a surface of a black phosphorus thin film with a diazirine compound represented by Chemical Formula 1 below; and
B) modifying the surface of the black phosphorus thin film into the n-type black phosphorus thin film through light irradiation:

 in Chemical Formula 1,
L 1 is a direct bond, C1-C20 alkylene group, C5-C30 cycloalkylene group, C6-C30 arylene group, or a combination thereof, and
R 1 and R 2 are each independently C1-C20 alkyl group, C5-C30 cycloalkyl group, C6-C30 aryl group, C1-C20 alkoxy group, C1-C20 hydroxyalkyl group, halogen group, amine group, nitro group, sulfonic acid group, C1-C20 heteroalkyl group including at least one heteroatom in which electronegativity is 2.5 or more, C5-C30 heterocycloalkyl group including at least one heteroatom in which electronegativity is 2.5 or more, C6-C30 heteroaryl group including at least one heteroatom in which electronegativity is 2.5 or more, or a combination thereof,
wherein at least one hydrogen in the alkylene group, cycloalkylene group, arylene group, alkyl group, cycloalkyl group, aryl group, alkoxy group, and hydroxyalkyl group is each independently unsubstituted or substituted with a substituent, the substituent being C1-C20 alkyl group, C1-C20 alkoxy group, C1-C20 hydroxyalkyl group, C5-C30 cycloalkyl group, C6-C30 aryl group, halogen group, or amino group.

Assignees

• Korea Res Inst Standards & Sci

Inventors

• Kim Ansoon
• Hong Songwoung
• Kim Jeong Won
• Kwon Hyuksang

Classifications

• C07D229/02

  containing three-membered rings · CPC title

• H01L51/0575

  Electricity · mapped topic

• H01L51/42

  Electricity · mapped topic

• H01L29/24

  Electricity · mapped topic

• H01L29/70

  Electricity · mapped topic