Oxide for semiconductor layer of thin film transistor, sputtering target, and thin film transistor

Patent metadata

Field	Value
Publication number	US-10468535-B2
Application number	US-201113636255-A
Country	US
Kind code	B2
Filing date	Apr 7, 2011
Priority date	Apr 7, 2010
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.

First claim

The invention claimed is:

1. A sputtering target for forming an oxide, the sputtering target comprising
In, Ga, and Zn; and
at least one element selected from the group X consisting of Si, Ni, Hf, Ta, and W,
wherein
the sputtering target does not comprise Sn,
when the sputtering target comprises Si as the element of the group X, Si/(In+Ga+Zn+Si)×100=2.0 to 15 at %;
when the sputtering target comprises Ni as the element of the group X, Ni/(In+Ga+Zn+Ni)×100=0.1 to 5 at %;
when the sputtering target comprises Hf as the element of the group X, Hf/(In+Ga+Zn+Hf)×100=2.0 to 10 at %;
when the sputtering target comprises Ta as the element of the group X, Ta/(In+Ga+Zn+Ta)×100=2.0 to 10 at %; and
when the sputtering target comprises W as the element of the group X, W/(In+Ga+Zn+W)×100=2.0 to 10 at %.

2. The sputtering target according to claim 1 , comprising
In, Ga, Zn, and Si,
wherein Si/(In+Ga+Zn+Si)×100=2.0 to 15 at %.

3. The sputtering target according to claim 1 , comprising
In, Ga, Zn, and Ni,
wherein Ni/(In+Ga+Zn+Ni)×100=0.1 to 5 at %.

4. The sputtering target according to claim 1 , comprising
In, Ga, Zn, and Hf,
wherein Hf/(In+Ga+Zn+Hf)×100=2.0 to 10 at %.

5. The sputtering target according to claim 1 , comprising
In, Ga, Zn, and Ta,
wherein Ta/(In+Ga+Zn+Ta)×100=2.0 to 10 at %.

6. The sputtering target according to claim 1 , comprising
In, Ga, Zn, and W,
wherein W/(In+Ga+Zn+W)×100=2.0 to 10 at %.

Assignees

• Morita Shinya
• Kugimiya Toshihiro
• Maeda Takeaki
• Yasuno Satoshi
• Terao Yasuaki
• Miki Aya
• Kobe Steel Ltd

Inventors

• Morita Shinya
• Kugimiya Toshihiro
• Maeda Takeaki
• Yasuno Satoshi
• Terao Yasuaki
• Miki Aya

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426 Primary

  Oxides · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• C23C14/3414

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• C23C14/08

  Oxides (C23C14/10 takes precedence) · CPC title