Nanoscale electronic spin filter

Patent metadata

Field	Value
Publication number	US-10468507-B2
Application number	US-201515527711-A
Country	US
Kind code	B2
Filing date	Nov 19, 2015
Priority date	Nov 19, 2014
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

The present invention is in the field of spintronics, and relates to a highly efficient spin filter device, such as a spin-polarizer or a spin valve, and a method for fabrication thereof.

First claim

What is claimed is:

1. A spin filter device comprising two metal electrodes ended with low-coordinated surfaces and at least one atomic scale junction between said surfaces, said atomic scale junction comprising:
at least one oxygen atom; or
at least one atomic chain formed by atoms of said metal and oxygen atoms interconnected between said metal atoms;

thereby enhancing a spin-filtering effect by selective p-d orbital hybridization between the p orbitals of the oxygen and the d orbitals of the metal, promoting spin-polarized currents via frontier d orbitals of the metal and suppressing poorly spin polarized-currents via frontier s orbitals of the metal, wherein said atomic scale junction exhibits conductance value lower than 1.8 e 2 /h.

2. The device of claim 1 , wherein said electrodes are made of a nanoscale low-coordinated structure comprising ferromagnetic or antiferromagnetic metal that chemically reacts with oxygen.

3. The device of claim 1 , wherein a length of said atomic chain in said atomic scale junction is selected such that the device is operable as a spin filter.

4. The device of claim 1 , wherein a length of said atomic chain in the atomic scale junction is selected such that the device is operable as a spin current conductor.

5. The device of claim 1 , wherein the metal electrodes comprises at least one of the following materials: nickel, cobalt, iron, alloys thereof.

6. The device of claim 1 , wherein the current flowing through said device is at least 50% spin polarized or at least 75% spin polarized or at least 90% spin polarized.

7. The device of claim 1 , wherein said device is operated at room temperature.

8. The device of claim 1 wherein said device is used as a reading probe/head of magnetic information, a memory element, a conductor for spin polarized current, or a spin current polarizer/filter or a combination thereof.

9. A method of fabrication of a spin filter device, the method comprising:
providing a wire (or a segment thereof) made of a ferromagnetic or antiferromagnetic metal;
controllably elongating a region of said wire until identifying at least one predetermined elongation condition of the wire;
exposing at least said region of the wire to an oxygen environment, thereby forming in said region an atomic scale junction comprising:
at least one oxygen atom: or
at least one atomic chain formed by the metal and oxygen atoms interconnected between the metal atoms;

resulting in a selective p-d orbital hybridization between the p orbitals of the oxygen and the d orbitals of the metal, wherein
said atomic scale junction exhibits conductance value lower than 1.8 e 2 /h.

10. The method of claim 9 , wherein said controllably elongating the region of the wire comprises monitoring at least one parameter of the wire.

11. The method of claim 9 , wherein said controllably elongating the region of the wire comprises monitoring a duration of the elongation process.

12. The method of claim 10 , wherein at least one parameter of the wire being monitored comprises at least one of the following: a characteristic resistance of a single metal atom, conductance value, length of said region.

13. The method of claim 9 , wherein said controllable elongation of the region of the wire and said exposing of the at least said region of the wire to the oxygen environment are performed substantially simultaneously.

14. The method of claim 9 , wherein said wire is made of at least one of the following materials: nickel, cobalt, iron, alloys thereof.

15. The method of claim 9 , wherein said controllable elongation of the region of the wire and said exposing of the at least said region of the wire to the oxygen environment comprise controlling a length of the atomic chain being formed.

16. The method of claim 9 , wherein said exposing of the at least elongated region of the wire to the oxygen environment comprises allowing at least partial oxidation of the wire surface to thereby form metal-oxygen atomic chains attached to the surface.

17. The method of claim 9 , wherein said exposing of the at least elongated region of the wire to the oxygen environment comprises deposition of oxygen onto said at least elongated region of the wire.

18. The method of claim 9 , wherein said metal comprises at least one of the following materials: nickel, cobalt, iron, alloys thereof.

19. A method of fabrication of a spin filter device comprising:
two metal electrodes ended with low-coordinated surfaces and at least one atomic scale junction between said surfaces, said atomic scale junction comprising:
at least one oxygen atom; or
at least one atomic chain formed by atoms of said metal and oxygen atoms interconnected between said metal atoms;

thereby enhancing a spin-filtering effect by selective p-d orbital hybridization between the p orbitals of the oxygen and the d orbitals of the metal, promoting spin-polarized currents via frontier d orbitals of the metal and suppressing poorly spin polarized- currents via frontier s orbitals of the metal;
said method comprising:
controllably depositing said at least one oxygen atom or said metal and oxygen atoms on a first substrate to form an attachment of said oxygen atom to said first substrate or to form an attachment of said at least one metal-oxygen atomic chain(s) to said first substrate; and
fabricating said at least two electrodes on said first substrate such that tips of said electrodes are in contact with said oxygen atom or with said metal-oxygen atomic chain.

20. The method of claim 19 , wherein said electrodes are fabricated prior to said deposition of oxygen or of metal and oxygen atoms or wherein said electrodes are fabricated following said deposition of oxygen or of metal and oxygen atoms.

21. The method of claim 19 , wherein said first substrate is insulating.

22. The method of claim 19 , wherein said electrodes comprise at least one of the following materials: nickel, cobalt, iron, alloys thereof.

23. A method of fabrication of a spin filter device comprising:
two metal electrodes ended with low-coordinated surfaces and at least one atomic scale junction between said surfaces, said atomic scale junction comprising:
at least one oxygen atom; or
at least one atomic chain formed by atoms of said metal and oxygen atoms interconnected between said metal atoms;

thereby enhancing a spin-filtering effect by selective p-d orbital hybridization between the p orbitals of the oxygen and the d orbitals of the metal, promoting spin-polarized currents via frontier d orbitals of the metal and suppressing poorly spin polarized- currents via frontier s orbitals of the metal;
said method comprising:
controllably depositing said at least one oxygen atom or said metal and oxygen atoms on a first substrate to form an attachment of said oxygen atom to said first substrate or to form an attachment of said at least one metal-oxygen atomic chain(s) to said first substrate; wherein following said metal and oxygen deposition, a second substrate is brought into contact with said metal-oxygen atomic chains, such that said first and second substrates form said two electrodes in contact with said metal-oxygen atomic chains.

24. The method of claim 23 , wherein said first and said second substrates or portions thereof are conductive.

Assignees

• Yeda Res & Dev

Inventors

• Tal Oren
• Vardimon Ran
• Klionsky Marina

Classifications

• H01F1/0072

  one dimensional, i.e. linear or dendritic nanostructures · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• H01F10/329

  Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title

• B82Y25/00

  Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title