Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10468334-B2
Application number	US-201715702084-A
Country	US
Kind code	B2
Filing date	Sep 12, 2017
Priority date	Mar 17, 2017
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

A semiconductor device according to an embodiment includes a semiconductor substrate including a first face having semiconductor elements, and a second face on an opposite side to the first face. A first insulating film is located on the first face of the semiconductor substrate. A conductor is located on the first insulating film. A metal electrode is located between the first face and the second face and passes through the semiconductor substrate to be in contact with the conductor. A second insulating film is located between the metal electrode and the semiconductor substrate. A boundary face between the first insulating film and the second insulating film is located on a side of the conductor relative to the first face of the semiconductor substrate and is inclined to approach the conductor toward a center portion of the metal electrode.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor substrate comprising a first face comprising semiconductor elements, and a second face on an opposite side to the first face;
a first insulating film provided on the first face of the semiconductor substrate;
a conductor provided on the first insulating film;
a metal electrode provided between the first face and the second face and passing through the semiconductor substrate to be in contact with the conductor; and
a second insulating film provided between the metal electrode and the semiconductor substrate, wherein
a first boundary face between the first insulating film and the second insulating film is located on a side of the conductor relative to the first face of the semiconductor substrate and is inclined to approach the conductor toward a center portion of the metal electrode, wherein
a thickness of the first insulating film is thinned from the semiconductor substrate toward the center portion of the metal electrode.

2. The device of claim 1 , wherein the first boundary face is located between the semiconductor substrate and the metal electrode.

3. The device of claim 1 , wherein the first boundary face approaches the conductor from the semiconductor substrate toward the center portion of the metal electrode.

4. The device of claim 1 , wherein a second boundary face between the metal electrode and the second insulating film, the second boundary face being located above the first boundary face, is inclined along the first boundary face.

5. The device of claim 4 , wherein the second boundary face approaches the center portion of the metal electrode just above the first boundary face.

6. The device of claim 4 , wherein an inner side face of a part of the second insulating film between the semiconductor substrate and the metal electrode is substantially perpendicular to the first face or has an angle to the first face which is closer to 90 degree than the angle between the first and second boundary faces and the first face.

7. A semiconductor device comprising:
a semiconductor substrate comprising a first face comprising semiconductor elements, and a second face on an opposite side to the first face;
a first insulating film provided on the first face of the semiconductor substrate;
a conductor provided on the first insulating film;
a metal electrode provided between the first face and the second face and passing through the semiconductor substrate to be in contact with the conductor; and
a second insulating film provided between the metal electrode and the semiconductor substrate, wherein
a first boundary face between the first insulating film and the second insulating film is located on a side of the conductor relative to the first face of the semiconductor substrate and is inclined to approach the conductor toward a center portion of the metal electrode,
wherein a sum of film thicknesses of the first and second insulating films is reduced from the semiconductor substrate toward the center portion of the metal electrode.

8. The device of claim 7 , wherein the first boundary face is located between the semiconductor substrate and the metal electrode.

9. The device of claim 7 , wherein the first boundary face approaches the conductor from the semiconductor substrate toward the center portion of the metal electrode.

10. The device of claim 7 , wherein a second boundary face between the metal electrode and the second insulating film, the second boundary face being located above the first boundary face, is inclined along the first boundary face.

11. The device of claim 10 , wherein the second boundary face approaches the center portion of the metal electrode just above the first boundary face.

12. The device of claim 10 , wherein an inner side face of a part of the second insulating film between the semiconductor substrate and the metal electrode is substantially perpendicular to the first face or has an angle to the first face which is closer to 90 degree than the angle between the first and second boundary faces and the first face.

13. A semiconductor device comprising:
a semiconductor substrate comprising a first face comprising semiconductor elements, and a second face on an opposite side to the first face;
a first insulating film provided on the first face of the semiconductor substrate;
a conductor provided on the first insulating film;
a metal electrode provided between the first face and the second face and passing through the semiconductor substrate to be in contact with the conductor; and
a second insulating film provided between the metal electrode and the semiconductor substrate, wherein
assuming boundary faces between the metal electrode and the first insulating film on both sides of the metal electrode are first and second boundary faces and boundary faces between the second insulating film and the semiconductor substrate on both sides of the metal electrode are third and fourth boundary faces in a cross-section in a direction substantially perpendicular to the first face and the second face, a first center line is shifted from a second center line in a first direction parallel to the first face, the first center line overlapping with a center point between the first boundary face and the second boundary face and being perpendicular to the first face, the second center line overlapping with a center point between the third boundary face and the fourth boundary face and being perpendicular to the first face, and
a boundary face located on a side in the first direction out of boundary faces between the metal electrode and the second insulating film in the cross-section is bent at an end on a side of the second face.

14. The device of claim 13 , wherein the boundary face on the side in the first direction out of the boundary faces between the metal electrode and the second insulating film is rounded at the end on the side of the second face in the cross-section.

15. The device of claim 14 , wherein a boundary face on an opposite side to the first direction out of the boundary faces between the metal electrode and the second insulating film is not chamfered at an end on the side of the second face in the cross-section.

16. The device of claim 13 , wherein a boundary face on an opposite side to the first direction out of the boundary faces between the metal electrode and the second insulating film is not chamfered at an end on the side of the second face in the cross-section.

Assignees

• Toshiba Memory Corp

Inventors

• Kume Ippei
• Nakamura Kazuhiko
• Noda Yuki

Classifications

• H10W20/0265

  characterised by the sidewall insulation · CPC title

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10W20/2125

  Top-view shapes · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10W72/944

  Dispositions of multiple bond pads · CPC title