Semiconductor device and method of manufacturing semiconductor device
US-2015171020-A1 · Jun 18, 2015 · US
US10468323B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10468323-B2 |
| Application number | US-201816132956-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 17, 2018 |
| Priority date | Aug 26, 2014 |
| Publication date | Nov 5, 2019 |
| Grant date | Nov 5, 2019 |
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Official abstract text for this publication.
A high frequency module improved in heat dissipation performance includes: a dielectric multilayer substrate including a ground layer and a high frequency electronic component mounted thereon while being in contact with the ground layer, the high frequency electronic component including a heat generating portion; and a cutoff block formed of an upstanding wall portion and a cover portion covering the upstanding wall portion, the cutoff block housing the high frequency electronic component and including a hollow portion having a cutoff characteristic at a frequency of a high frequency signal used by the high frequency electronic component, and the upstanding wall portion of the cutoff block being in contact with the ground layer of the dielectric multilayer substrate.
Opening claim text (preview).
The invention claimed is: 1. A high frequency module comprising: a dielectric multilayer substrate with a high frequency electronic component mounted thereon, the high frequency electronic component including a heat generating portion; and a first ground pattern formed on the dielectric multilayer substrate and being in contact with the high frequency electronic component; a block formed of an upstanding wall portion and a cover portion that covers the upstanding wall portion, the block housing the high frequency electronic component and being provided with a hollow portion between the cover portion and a surface of the high frequency electronic component on an opposite side to a surface thereof that is in contact with the first ground pattern, the block being provided with an opening portion exposing the dielectric multilayer substrate, a part of the block excluding the hollow portion and the opening portion being configured as the upstanding wall portion and being formed on the dielectric multilayer substrate; and a second ground pattern separated from the first ground pattern, formed on the dielectric multilayer substrate and being in contact with the upstanding wall portion, the first ground pattern and the second ground pattern being connected to each other on an inside of the dielectric multilayer substrate, and-heat generated in the heat generating portion being transmitted from the first ground pattern through the second ground pattern to the block. 2. The high frequency module according to claim 1 , wherein the first ground pattern is a metal core exposed from the dielectric multilayer substrate. 3. The high frequency module according to claim 2 , wherein the dielectric multilayer substrate has one surface on which the high frequency electronic component and the block are mounted, and another surface on which an antenna element connected to the high frequency electronic component is provided. 4. The high frequency module according to claim 1 , wherein the dielectric multilayer substrate has one surface on which the high frequency electronic component and the block are mounted, and another surface on which an antenna element connected to the high frequency electronic component is provided. 5. A high frequency module comprising: a dielectric multilayer substrate with a high frequency electronic component mounted thereon, the high frequency electronic component including a heat generating portion; and a first ground pattern formed on the dielectric multilayer substrate and being in contact with the high frequency electronic component; a block formed of an upstanding wall portion and a cover portion that covers the upstanding wall portion, the block housing the high frequency electronic component and being provided with a hollow portion, the hollow portion being provided by pulling the high frequency electronic component close to the cover portion to cause the cover portion to come into contact with a surface of the high frequency electronic component on an opposite side to a surface thereof that is in contact with the first ground pattern such that the hollow portion is located between the cover portion and the surface of the high frequency electronic component on the opposite side; a second ground pattern separated from the first ground pattern, formed on the dielectric multilayer substrate and being in contact with the upstanding wall portion; and a lead end face of the high frequency electronic component, the lead end face being solder-connected on the dielectric multilayer substrate between the first ground pattern and the second ground pattern, the first ground pattern and the second ground pattern being connected to each other on an inside of the dielectric multilayer substrate, and the lead end face being formed as a bending structure. 6. The high frequency module according to claim 5 , wherein the high frequency electronic component and the first ground pattern are in contact with each other with a radiation sheet interposed therebetween. 7. The high frequency module according to claim 6 , wherein the dielectric multilayer substrate has one surface on which the high frequency electronic component and the block are mounted, and another surface on which an antenna element connected to the high frequency electronic component is provided. 8. The high frequency module according to claim 5 , wherein the dielectric multilayer substrate has one surface on which the high frequency electronic component and the block are mounted, and another surface on which an antenna element connected to the high frequency electronic component is provided.
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