Two-transistor bandgap reference circuit and FinFET device suited for same

Patent metadata

Field	Value
Publication number	US-10466731-B2
Application number	US-201615007684-A
Country	US
Kind code	B2
Filing date	Jan 27, 2016
Priority date	Jan 27, 2016
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

Some embodiments relate to a two transistor band gap reference circuit. A first transistor includes a first source, a first drain, a first body region separating the first source from the first drain, and a first gate. The first drain and first gate are coupled to a DC supply terminal. The second transistor includes a second source, a second drain, a second body region separating the second source from the second drain, and a second gate. The second gate is coupled to the DC supply terminal, and the second drain is coupled to the first source. Body bias circuitry is configured to apply a body bias voltage to at least one of the first and second body regions. Other embodiments relate to FinFET devices.

First claim

What is claimed is:

1. A two transistor band gap reference (BGR) circuit, comprising:
a DC supply terminal;
a first transistor including a first source, a first drain, a first body region separating the first source from the first drain, and a first gate; the first drain and the first gate being coupled directly to the DC supply terminal, and the first transistor having a first threshold voltage;
a second transistor including a second source, a second drain, a second body region separating the second source from the second drain, and a second gate; the second gate being coupled to the DC supply terminal, and the second drain being coupled to the first source and corresponding to an output terminal where a BGR voltage is provided, and the second transistor having a second threshold voltage that is greater than the first threshold voltage; and
body bias circuitry configured to apply a negative first body bias voltage to the first body region to increase the first threshold voltage to a third threshold voltage greater than the second threshold voltage;
wherein the first and second transistors are arranged on a semiconductor substrate, the semiconductor substrate comprising:
a base region;
a crown structure including a region of semiconductor material extending upwardly from the base region; and
a plurality of fins extending upwardly from an upper surface of the crown structure and spaced apart from one another.

2. The BGR circuit of claim 1 , further comprising:
a dielectric material disposed over upper surfaces and along sidewalls of the plurality of fins; and
a plurality of conductive electrodes disposed along sidewalls of the plurality of fins and separated from the sidewalls of the fins by the dielectric material, wherein the conductive electrodes have upper surfaces which are arranged below the upper surfaces of the plurality of fins and which do not extend directly over the upper surfaces of the plurality of fins.

3. The BGR circuit of claim 2 , further comprising:
peripheral isolation regions disposed over the base region of a semiconductor substrate and extending upwardly to have upper surfaces that correspond to lower sidewalls of the plurality of fins; and
internal isolation regions disposed over the crown structure and extending upwardly to have upper surfaces that are coplanar with upper surfaces of the peripheral isolation regions, the internal isolation regions having a depth that is less than that of the peripheral isolation regions.

4. The BGR circuit of claim 2 , further comprising:
a plurality of gate electrode contacts extending downwardly to make contact with the plurality of gate electrodes, respectively, wherein gate electrodes nearest to a fin and on opposite sidewalls of a fin are configured to apply independent biases to the fin.

5. The BGR circuit of claim 2 , further comprising:
a body contact extending downwardly between neighboring sidewalls of first and second fins to make contact with the crown structure.

6. The BGR circuit of claim 5 , wherein the body contact is shorted to conductive electrodes disposed between the first and second fins and is shorted to the crown structure.

7. The BGR circuit of claim 5 , wherein the body bias circuitry is configured to apply the body bias voltage to the first and second fins through the body contact.

8. The BGR circuit of claim 5 , wherein the first and second fins correspond to first and second finFETs included in the two transistor bandgap reference circuit in which the first and second finFETs are arranged in series between a VDD supply terminal and a Vss supply terminal.

9. The BGR circuit of claim 1 , wherein the second gate is coupled directly to the DC supply terminal.

10. The BGR circuit of claim 1 , wherein the BGR voltage is between 0.06 V and 0.08 V when the BGR circuit is located in an ambient environment of −40° C. and the BGR voltage remains between 0.06 V and 0.08 V when the ambient environment warms to 140° C.

11. The BGR circuit of claim 1 , wherein the second source is coupled to a second DC supply terminal, and wherein the body bias voltage has a magnitude which is greater than a first magnitude of a first voltage provided at the DC supply terminal and which is greater than a second magnitude of a second voltage provided at the second DC supply terminal.

12. A two transistor band gap reference (BGR) circuit, comprising:
a first DC supply terminal;
a first transistor including a first source, a first drain, a first body region separating the first source from the first drain, and a first gate; the first drain and the first gate being coupled to the first DC supply terminal;
a second transistor including a second source, a second drain, a second body region separating the second source from the second drain, and a second gate; the second source being coupled to a second DC supply terminal, the second gate being coupled to the first DC supply terminal, and the second drain being coupled to the first source and corresponding to an output terminal where a BGR voltage is provided;
body bias circuitry configured to apply a body bias voltage to at least one of the first and second body regions, wherein the body bias voltage has a magnitude which is greater than a first magnitude of a first voltage provided at the first DC supply terminal and which is greater than a second magnitude of a second voltage provided at the second DC supply terminal;
wherein the first and second transistors are arranged on a semiconductor substrate, the semiconductor substrate comprising:
a base region;
a crown structure including a region of semiconductor material extending upwardly from the base region;
a plurality of fins extending upwardly from an upper surface of the crown structure and spaced apart from one another;
a dielectric material disposed over upper surfaces and along sidewalls of the plurality of fins;
a plurality of conductive electrodes disposed along sidewalls of the plurality of fins and separated from the sidewalls of the fins by the dielectric material, wherein the conductive electrodes have upper surfaces which are arranged below the upper surfaces of the plurality of fins and which do not extend directly over the upper surfaces of the plurality of fins; and
a body contact extending downwardly between neighboring sidewalls of first and second fins to make contact with the crown structure, wherein the body contact is shorted to conductive electrodes disposed between the first and second fins and is shorted to the crown structure.

13. The BGR circuit of claim 12 , wherein the magnitude of the body bias voltage is more than twice as large as the first magnitude and is more than twice as large as the second magnitude.

14. The BGR circuit of claim 12 , wherein the first transistor has a first threshold voltage that is less than a second threshold voltage of the second transistor; and the body bias circuitry is configured to apply a negative first body bias voltage to the first body region.

15. A two transistor band gap reference (BGR) circuit, comprising:
a DC supply terminal;
a first transistor having a first threshold voltage comprising a first source, a first drain, a first body region having a first conductivity type separating the first source from the first drain, and a first gate; the first drain and the first gate being coupled to the DC supply terminal and the first source corresponding to an output terminal where a BGR voltage is provided;
a second transistor having a second threshold voltage that differs from the first threshold voltage comprising a second source, a second drain, a second body region having t

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lin Yvonne
• Lin Da-Wen
• Huang Peter
• Rousseau Paul
• Yang Sheng-Jier

Classifications

• G05F1/468

  characterised by reference voltage circuitry, e.g. soft start, remote shutdown · CPC title

• G05F1/595

  semiconductor devices connected in series · CPC title

• G05F3/16 Primary

  being semiconductor devices · CPC title

• G05F3/247

  producing a voltage or current as a predetermined function of the supply voltage · CPC title

• G05F1/465

  Internal voltage generators for integrated circuits, e.g. step down generators · CPC title